MBR260HW N1503 REV.A

SANGDEST
MICROELECTRONICS
MBR260HW
Green Products
Technical Data
Data Sheet N1503, Rev. A
MBR260HW SCHOTTKY RECTIFIER
Applications:
•
•
•
•
•
Switching power supply
Converters
Free-Wheeling diodes
Reverse battery protection
Center tap configuration
Features:
•
•
•
•
•
•
•
•
125 °C TJ operation
Low forward voltage drop
High purity, high temperature epoxy encapsulation for enhanced mechanical strength and
moisture resistance
High frequency operation
Guard ring for enhanced ruggedness and long term reliability
This is a Pb − Free Device
All SMC parts are traceable to the wafer lot
Additional testing can be offered upon request
Mechanical Dimensions (In mm/Inches)
SOD-123
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113
(86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
SANGDEST
MICROELECTRONICS
MBR260HW
Green Products
Technical Data
Data Sheet N1503, Rev. A
Marking Diagram:
Where X is Date Code
L26
= Part Name
Cautions:Molding resin
Epoxy resin UL:94V-0
Ordering Information:
Device
MBR260HW
Package
SOD-123
(Pb-Free)
Shipping
3000pcs / reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification.
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113
(86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
SANGDEST
MICROELECTRONICS
MBR260HW
Green Products
Technical Data
Data Sheet N1503, Rev. A
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
VRRM
VRWM
VR
60
V
IO
2
A
@IF = 1A,TA = 25°C
@IF = 2A,TA = 25°C
VFM
0.52
0.66
V
@TA = 25°C
I RM
50
μA
IFSM
30
A
Cj
100
pF
TJ
125
°C
TSTG
-55 to +150
°C
wt
0.028
g
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(At Rated VR, TL = 55°C)
Forward Voltage
Peak Reverse Current
Non-Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions
Half-wave, Single Phase, 60 Hz)
Maximum Junction Capacitance (Note 1)
Operating Junction Temperature Range
Storage Temperature Range
Approximate Weight
Case Style
SOD-123
Note 1. Measured at 1MHz and applied reverse voltage of 5.0V D.C.
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113
(86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
SANGDEST
MICROELECTRONICS
MBR260HW
Green Products
Technical Data
Data Sheet N1503, Rev. A
100
Instantaneous Reverse Current (mA)
Junction Capacitance (PF)
1000
TJ=25℃
100
10
0
5
10
15
20
25
30
35
40
TJ=125℃
10
1
0.1
TJ=25℃
0.01
0.001
10
30
40
50
60
70
80
90
Percent of Rated Peak Reverse Voltage (%)
Reverse Voltage (V)
Fig.2-Typical Reverse Characteristics
Fig.1-Typical Junction Capacitance
Instantaneous Forward Current (A)
20
10
TJ=125℃
TJ=25℃
1
0.1
0.1
0.3
0.5
0.7
0.9
1.1
Forward Voltage Drop (V)
Fig.3-Typical Forward Voltage Drop Characteristics
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113
(86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
100
SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N1503, Rev. A
MBR260HW
Green Products
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales
department for the latest version of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement .
3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or
any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd
assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information,
products or circuits described in the datasheets.
4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any
secondary damage resulting from use at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics
(Nanjing) Co., Ltd.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC
- Sangdest Microelectronics (Nanjing) Co., Ltd.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will
hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third
party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and
regulations..
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113
(86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •