SL36A Technical Data Data Sheet N1346 Rev. - Green Products SL36A SCHOTTKY RECTIFIER Applications: • • • • Switching power supply Converters Free-Wheeling diodes Reverse battery protection Features: • • • • • • • • • Schottky Barrier Chip Guard Ring Die Construction for Transient Protection High Current Capability Low Power Loss, High Efficiency High Surge Current Capability For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications This is a Pb − Free Device All SMC parts are traceable to the wafer lot Additional testing can be offered upon request Mechanical Dimensions (In mm / Inches) OPTION 1 • China - Germany - Korea - Singapore - United States • • http://www.smc-diodes.com - sales@ smc-diodes.com • SL36A Technical Data Data Sheet N1346 Rev. - Green Products OPTION 2(JK) SMA • China - Germany - Korea - Singapore - United States • • http://www.smc-diodes.com - sales@ smc-diodes.com • SL36A Technical Data Data Sheet N1346 Rev. - Green Products Marking Diagram: Where XXXXX is YYWWL SL 3 6 A YY WW L = Device Type = Forward Current (3A) = Reverse Voltage (60V) = Package type = Year = Week = Lot Number Cautions：Molding resin Epoxy resin UL:94V-0 Ordering Information: Device Package Shipping SL36A SMA (Pb-Free) 5000pcs / reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification. Maximum Ratings: Characteristics Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Symbol VRRM VRWM VR Condition Max. Units - 60 V Average Forward Current IF(AV) 50% duty cycle ,rectangular wave form 3.0 A Peak One Cycle Non-Repetitive Surge Current IFSM 8.3 ms, half Sine pulse 70 A • China - Germany - Korea - Singapore - United States • • http://www.smc-diodes.com - sales@ smc-diodes.com • SL36A Technical Data Data Sheet N1346 Rev. - Green Products Electrical Characteristics: Characteristics Forward Voltage Drop* Reverse Current* Junction Capacitance * Symbol VF1 IR1 Cj Condition @ 3A, Pulse, TJ = 25℃ @VR = rated VR TJ = 25℃ @VR = 5.0 V, Tc=25℃ fSIG = 1MHz Max. 0.58 1.0 Units V mA 250 pF Specification -55 to +125 -55 to +125 Units ℃ ℃ 8 ℃/W 0.68 g Pulse Width < 300µs, Duty Cycle <2% Thermal-Mechanical Specifications: Characteristics Junction Temperature Storage Temperature Typical Thermal Resistance Junction to Case Approximate Weight Case Style Symbol TJ Tstg RθJC wt Condition DC operation SMB • China - Germany - Korea - Singapore - United States • • http://www.smc-diodes.com - sales@ smc-diodes.com • SL36A Technical Data Data Sheet N1346 Rev. - Green Products 100 Reverse Current-IR(MA) 1000 TJ=25℃ 100 10 TJ=125℃ 10 1 0.1 TJ=25℃ 0.01 0.001 0 5 10 15 20 25 30 35 40 10 20 30 40 50 60 R everse V oltage-VR (V ) Re ve r s e V oltage -V R(V ) Fig.1-Typical Junction Capacitance Vs.Reverse Fig.2-Typical Values Of Reverse Current VS.Reverse Voltage Voltage Instantaneous Forward CurrentIF(A) Junction Capacitance-CT(PF) 10000 100 10 TJ=125℃ TJ=25℃ 1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 Forward Voltage Drop-VF(V) Fig.3-Typical Forward Voltage Drop Characteristics • China - Germany - Korea - Singapore - United States • • http://www.smc-diodes.com - sales@ smc-diodes.com • SL36A Technical Data Data Sheet N1346 Rev. - Green Products DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations.. • China - Germany - Korea - Singapore - United States • • http://www.smc-diodes.com - sales@ smc-diodes.com •