MBRD350..360 N0797 REV.-

MBRD350
MBRD360
SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N0797, Rev. -
Green Products
MBRD350/MBRD360 SCHOTTKY RECTIFIER
Applications:
•
•
•
•
Switching power supply
Converters
Free-Wheeling diodes
Reverse battery protection
Features:
•
•
•
•
•
•
•
•
•
150 °C TJ operation
Center tap configuration
Low forward voltage drop
High purity, high temperature epoxy encapsulation for enhanced mechanical strength and
moisture resistance
High frequency operation
Guard ring for enhanced ruggedness and long term reliability
This is a Pb − Free Device
All SMC parts are traceable to the wafer lot
Additional testing can be offered upon request
Mechanical Dimensions: In Inches / mm
OPTION 1(MX)
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
MBRD350
MBRD360
SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N0797, Rev. -
Green Products
OPTION 2(CJ)
DPAK
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
MBRD350
MBRD360
SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N0797, Rev. -
Green Products
Marking Diagram:
Where XXXXX is YYWWL
MBR
D
3
50
SSG
YY
WW
L
= Device Type
= Package type
= Forward Current (3A)
= Reverse Voltage (50V)
= SSG
= Year
= Week
= Lot Number
Cautions:Molding resin
Epoxy resin UL:94V-0
Ordering Information:
Device
Package
DPAK
(Pb-Free)
MBRD350
Shipping
2500pcs / reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification.
Maximum Ratings:
Characteristics
Peak Inverse Voltage
Symbol
VRWM
Condition
-
50
60
Max.
MBRD350
MBRD360
Units
V
Max. Average Forward
IF(AV)
50% duty cycle @TC =125°C,
rectangular wave form
3
A
Max. Peak One Cycle NonRepetitive Surge Current
(per leg)
IFSM
8.3 ms, half Sine pulse
75
A
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
MBRD350
MBRD360
SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N0797, Rev. -
Green Products
Electrical Characteristics:
Characteristics
Max. Forward Voltage Drop
Symbol
VF1
VF1
*
Max. Reverse Current at DC
condition
Max. Reverse Current
IR1
Max. Voltage Rate of Change
dv/dt
IR2
Condition
@ 3A, Pulse, TJ = 25 °C
@ 6A, Pulse, TJ = 25 °C
@ 3A, Pulse, TJ = 125 °C
@ 6A, Pulse, TJ = 125 °C
@VR = rated VR
TJ = 25 °C
@VR = rated VR
TJ = 125 °C
-
Max.
0.60
0.70
0.45
0.625
0.2
Units
20
mA
10,000
V/μs
Specification
-55 to +150
-55 to +175
6.0
Units
°C
°C
°C/W
0.39
g
V
V
mA
Pulse Width < 300µs, Duty Cycle <2%
Thermal-Mechanical Specifications:
Characteristics
Junction Temperature Range
Storage Temperature Range
Maximum Thermal
Resistance Junction to Case
Approximate Weight
Case Style
Symbol
TJ
Tstg
RθJC
wt
Condition
DC operation
DPAK
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N0797, Rev. -
MBRD350
MBRD360
Green Products
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N0797, Rev. -
MBRD350
MBRD360
Green Products
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales
department for the latest version of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement .
3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or
any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd
assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information,
products or circuits described in the datasheets.
4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any
secondary damage resulting from use at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics
(Nanjing) Co., Ltd.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC
- Sangdest Microelectronics (Nanjing) Co., Ltd.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will
hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third
party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and
regulations..
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •