HGTD7N60B3S, HGT1S7N60B3S, HGTP7N60B3 Data Sheet January 2000 14A, 600V, UFS Series N-Channel IGBTs Features The HGTD7N60B3S, HGT1S7N60B3S and HGTP7N60B3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. • 14A, 600V, TC = 25oC The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Packaging File Number 4412.2 • 600V Switching SOA Capability • Typical Fall Time. . . . . . . . . . . . . . . . 120ns at TJ = 150oC • Short Circuit Rating • Low Conduction Loss JEDEC TO-220AB E C G COLLECTOR (FLANGE) Formerly Developmental Type TA49190. Ordering Information PART NUMBER PACKAGE BRAND HGTD7N60B3S TO-252AA G7N60B HGT1S7N60B3S TO-263AB G7N60B3 HGTP7N60B3 TO-220AB G7N60B3 JEDEC TO-263AB COLLECTOR (FLANGE) NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-252AA and TO-263AB variant in tape and reel, e.g., HGTD7N60B3S9A. G E Symbol JEDEC TO-252AA C COLLECTOR (FLANGE) G G E E INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713 4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000 HGTD7N60B3S, HGT1S7N60B3S, HGTP7N60B3 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified ALL TYPES UNITS Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES 600 V Collector Current Continuous At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM Switching Safe Operating Area at TJ = 150oC, Figure 2 . . . . . . . . . . . . . . . . . . . . . . . . SSOA Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Reverse Voltage Avalanche Energy. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EARV Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Short Circuit Withstand Time (Note 2) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC Short Circuit Withstand Time (Note 2) at VGE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC 14 7 56 ±20 ±30 35A at 600V 60 0.476 100 -55 to 150 260 2 12 A A A V V W W/ oC mJ oC oC µs µs CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. Single Pulse; Pulse width limited by maximum junction temperature. Parts may current limit at less than ICM. 2. VCE = 360V, TJ = 125oC, RG = 50Ω. TC = 25oC, Unless Otherwise Specified Electrical Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS 600 - - V 15 28 - V - - 100 µA - - 2.0 mA - 1.8 2.1 V - 2.1 2.4 V 3.0 5.1 6.0 V - - ±100 nA VCE = 480V 42 - - A VCE = 600V 35 - - A IC = IC110, VCE = 0.5 BVCES - 7.7 - V IC = IC110, VCE = 0. 5BVCES VGE = 15V - 23 28 nC VGE = 20V - 30 37 nC - 26 - ns - 21 - ns - 130 160 ns tfI - 60 80 ns Turn-On Energy (Note 4) EON1 - 72 - µJ Turn-On Energy (Note 4) EON2 - 160 200 µJ Turn-Off Energy (Note 3) EOFF - 120 200 µJ Collector to Emitter Breakdown Voltage BVCES IC = 250µA, VGE = 0V Emitter to Collector Breakdown Voltage BVECS IC = 3mA, VGE = 0V Collector to Emitter Leakage Current Collector to Emitter Saturation Voltage Gate to Emitter Threshold Voltage Gate to Emitter Leakage Current Switching SOA ICES VCE(SAT) VGE(TH) VCE = BVCES IC = IC110, VGE = 15V TC = 25oC TC = 150oC TC = 25oC TC = 150oC IC = 250µA, VCE = VGE IGES VGE = ±20V SSOA TJ = 150oC RG = 50Ω VGE = 15V L = 100µH Gate to Emitter Plateau Voltage VGEP On-State Gate Charge QG(ON) Current Turn-On Delay Time td(ON)I Current Rise Time trI Current Turn-Off Delay Time td(OFF)I Current Fall Time 2 IGBT and Diode Both at TJ = 25oC ICE = IC110, VCE = 0.8 BVCES, VGE = 15V, RG = 50Ω, L = 2mH Test Circuit (Figure 17) HGTD7N60B3S, HGT1S7N60B3S, HGTP7N60B3 TC = 25oC, Unless Otherwise Specified (Continued) Electrical Specifications PARAMETER SYMBOL MIN TYP MAX UNITS - 24 - ns - 22 - ns - 230 295 ns tfI - 120 175 ns Turn-On Energy (Note 4) EON1 - 80 - µJ Turn-On Energy (Note 4) EON2 - 310 350 µJ Turn-Off Energy (Note 3) EOFF - 350 500 µJ Thermal Resistance Junction To Case RθJC - - 2.1 oC/W Current Turn-On Delay Time td(ON)I Current Rise Time trI Current Turn-Off Delay Time td(OFF)I Current Fall Time TEST CONDITIONS IGBT and Diode Both at TJ = 150oC ICE = IC110, VCE = 0.8 BVCES, VGE = 15V, RG =50Ω, L = 2mH Test Circuit (Figure 17) NOTE: 3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include losses due to diode recovery. 4. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the Turn-On loss of the IGBT only. EON2 is the Turn-On loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in Figure 17. Unless Otherwise Specified ICE , DC COLLECTOR CURRENT (A) 16 VGE = 15V 14 12 10 8 6 4 2 0 25 50 75 100 125 TC , CASE TEMPERATURE (oC) FIGURE 1. DC COLLECTOR CURRENT vs CASE TEMPERATURE 3 150 ICE, COLLECTOR TO EMITTER CURRENT (A) Typical Performance Curves 50 TJ = 150oC, RG = 50Ω, VGE = 15V 40 30 20 10 0 0 100 200 300 400 500 600 700 VCE, COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA HGTD7N60B3S, HGT1S7N60B3S, HGTP7N60B3 TJ = 150oC, RG = 50Ω, L = 2mH, VCE = 480V 100 10 TC VGE 75oC 75oC 110oC 110oC 15V 10V 15V 10V fMAX1 = 0.05 / (td(OFF)I + td(ON)I) fMAX2 = (PD - PC) / (EON2 + EOFF) PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) RØJC = 2.1oC/W, SEE NOTES 1 1 2 3 5 4 6 10 8 18 80 14 ISC 60 10 6 20 2 10 15 ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A) DUTY CYCLE < 0.5%, VGE = 10V 20 TC = 150oC 15 TC = 25oC 10 5 0 0 1 2 3 4 5 6 7 8 30 TC = 150oC TC = -55oC 20 TC = 25oC 10 0 PULSE DURATION = 250µs DUTY CYCLE < 0.5%, VGE = 15V 0 1000 EOFF, TURN-OFF ENERGY LOSS (µJ) EON2, TURN-ON ENERGY LOSS (µJ) RG = 50Ω, L = 2mH, VCE = 480V TJ = 150oC, VGE = 10V TJ = 150oC, VGE = 15V TJ = 25oC, VGE = 10V TJ = 25oC, VGE = 15V 400 3 5 7 9 11 13 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT 4 1 2 3 4 5 6 7 8 15 RG = 50Ω, L = 2mH, VCE = 480V 800 TJ = 150oC, VGE = 10V AND 15V 600 400 200 TJ = 25oC, VGE = 10V AND 15V 0 1 15 FIGURE 6. COLLECTOR TO EMITTER ON STATE VOLTAGE 1600 0 14 VCE, COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 5. COLLECTOR TO EMITTER ON STATE VOLTAGE 800 13 40 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 1200 12 FIGURE 4. SHORT CIRCUIT WITHSTAND TIME PULSE DURATION = 250µs TC = -55oC 11 VGE , GATE TO EMITTER VOLTAGE (V) FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO EMITTER CURRENT 25 40 tSC ICE, COLLECTOR TO EMITTER CURRENT (V) 30 100 VCE = 360V, RG = 50Ω, TJ = 125oC ISC, PEAK SHORT CIRCUIT CURRENT (A) fMAX, OPERATING FREQUENCY (kHz) 400 Unless Otherwise Specified (Continued) tSC , SHORT CIRCUIT WITHSTAND TIME (µs) Typical Performance Curves 1 3 5 7 9 11 13 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT 15 HGTD7N60B3S, HGT1S7N60B3S, HGTP7N60B3 Typical Performance Curves 140 RG = 50Ω, L = 2mH, VCE = 480V RG = 50Ω, L = 2mH, VCE = 480V 120 50 TJ = 150oC, VGE = 10V 40 TJ = 25oC, VGE = 10V TJ = 25oC, VGE = 15V 30 20 10 trI, RISE TIME (ns) tdI , TURN-ON DELAY TIME (ns) 60 Unless Otherwise Specified (Continued) TJ = 150oC, VGE = 15V 1 3 5 7 9 100 TJ = 150oC, VGE = 10V 80 TJ = 25oC, VGE = 10V 60 40 20 13 11 0 15 TJ = 25oC and 150oC, VGE = 15V 1 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO EMITTER CURRENT 7 TJ = 150oC, VGE = 15V TJ = 150oC, VGE = 10V 150 TJ = 25oC, VGE = 15V 100 TJ = 150oC, VGE = 10V and 15V 80 TJ = 25oC, VGE = 10V 50 1 3 5 7 TJ = 25oC, VGE = 10V and 15V 9 11 13 40 15 ICE , COLLECTOR TO EMITTER CURRENT (A) 15 VGE , GATE TO EMITTER VOLTAGE (V) TC = 25oC 16 TC = 150oC 8 TC = -55oC 6 10 8 12 VGE , GATE TO EMITTER VOLTAGE (V) FIGURE 13. TRANSFER CHARACTERISTIC 5 3 5 7 9 11 13 15 FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER CURRENT DUTY CYCLE = < 0.5% PULSE DURATION = 250µs VCE = 10V 24 1 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO EMITTER CURRENT 0 15 60 100 32 13 RG = 50Ω, L = 2mH, VCE = 480V RG = 50Ω, L = 2mH, VCE = 480V 200 40 11 9 FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO EMITTER CURRENT tfI , FALL TIME (ns) td(OFF)I , TURN-OFF DELAY TIME (ns) 5 120 250 ICE, COLLECTOR TO EMITTER CURRENT (A) 3 ICE , COLLECTOR TO EMITTER CURRENT (A) 14 Ig(REF) = 0.758mA, RL = 86Ω, TC = 25oC 12 VCE = 200V 9 VCE = 600V VCE = 400V 6 3 0 0 4 8 12 16 20 QG , GATE CHARGE (nC) FIGURE 14. GATE CHARGE WAVEFORMS 24 28 HGTD7N60B3S, HGT1S7N60B3S, HGTP7N60B3 Typical Performance Curves Unless Otherwise Specified (Continued) 1200 FREQUENCY = 1MHz C, CAPACITANCE (pF) 1000 CIES 800 600 400 COES 200 CRES 0 0 5 10 15 20 25 VCE, COLLECTOR TO EMITTER VOLTAGE (V) ZθJC , NORMALIZED THERMAL RESPONSE FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE DUTY CYCLE - DESCENDING ORDER 100 0.5 0.2 10-1 0.1 t1 0.05 0.02 0.01 PD SINGLE PULSE DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZθJC X RθJC) + TC 10-2 10-5 10-4 10-3 10-2 t2 10-1 100 101 t1 , RECTANGULAR PULSE DURATION (s) FIGURE 16. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE Test Circuit and Waveforms 90% L = 2mH 10% VGE RHRD660 EON2 EOFF VCE RG = 50Ω 90% + - VDD = 480V ICE 10% td(OFF)I tfI trI td(ON)I FIGURE 17. INDUCTIVE SWITCHING TEST CIRCUIT 6 FIGURE 18. SWITCHING TEST WAVEFORMS HGTD7N60B3S, HGT1S7N60B3S, HGTP7N60B3 Handling Precautions for IGBTs Operating Frequency Information Insulated Gate Bipolar Transistors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler’s body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: Operating frequency information for a typical device (Figure 3) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 5, 6, 7, 8, 9 and 11. The operating frequency plot (Figure 3) of a typical device shows fMAX1 or fMAX2; whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as “ECCOSORBD™ LD26” or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. td(OFF)I and td(ON)I are defined in Figure 18. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJM. td(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON2). The allowable dissipation (PD) is defined by PD = (TJM - TC)/RθJC . The sum of device switching and conduction losses must not exceed PD. A 50% duty factor was used (Figure 3) and the conduction losses (PC) are approximated by PC = (VCE x ICE)/2. EON2 and EOFF are defined in the switching waveforms shown in Figure 18. EON2 is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss (ICE x VCE) during turn-off. All tail losses are included in the calculation for EOFF ; i.e., the collector current equals zero (ICE = 0). 7. Gate Protection - These devices do not have an internal monolithic Zener diode from gate to emitter. If gate protection is required an external Zener is recommended. All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site www.intersil.com 7 ECCOSORBD™ is a Trademark of Emerson and Cumming, Inc.