95SQ015 N0181 REV.-

SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N0181, Rev. -
95SQ015
Green Products
95SQ015 SCHOTTKY RECTIFIER
Applications:
z
z
z
z
Parallel switching power supply
Converters
Redundant power subsystems
Reverse battery protection
Features:
z
z
z
z
z
z
z
125 °C TJ operation (VR<5V)
High purity, high temperature epoxy encapsulation for enhanced mechanical strength and
moisture resistance
Optimized for OR-ing applications
Ultra low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term reliability
z
This is a Pb − Free Device
All SMC parts are traceable to the wafer lot
Additional testing can be offered upon request
z
z
Mechanical Dimensions: In Inches / mm
DO
DO-201AD
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
SANGDEST
MICROELECTRONICS
95SQ015
Technical Data
Data Sheet N0181, Rev. -
Green Products
Marking Diagram:
Where XXXXX is YYWWL
95SQ015
SSG
YY
WW
L
= Part Name
= SSG
= Year
= Week
= Lot Number
Cautions:Molding resin
Epoxy resin UL:94V-0
Ordering Information:
Device
95SQ015
Package
DO-201AD
(Pb-Free)
Shipping
1250pcs / tape
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification.
Maximum Ratings:
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
SANGDEST
MICROELECTRONICS
95SQ015
Technical Data
Data Sheet N0181, Rev. -
Green Products
Electrical Characteristics:
Characteristics
Max. Forward Voltage Drop
Symbol
VF1
Condition
@ 9 A, Pulse, TJ = 25 °C
@ 18 A, Pulse, TJ = 25 °C
@ 9 A, Pulse, TJ = 125 °C
@ 18 A, Pulse, TJ = 125 °C
@VR = rated VR ,TJ = 25 °C
@VR = rated VR ,TJ = 100 °C
Max.
0.34
0.37
0.25
0.31
7.0
348
Units
V
@VR = 12 V ,TJ = 100 °C
@VR = 5 V ,TJ = 100 °C
@VR = 5.0 V, Tc=25℃
fSIG = 1MHz
Measured lead to lead 5 mm from
package body
-
310
190
1300
mA
mA
pF
8.0
nH
10,000
V/μs
Symbol
TJ
Tstg
Condition
-
Specification
-55 to +125
-55 to +150
Units
°C
°C
RθJA
-
44
°C/W
RθJL
-
8
°C/W
wt
-
1.02
g
VF2
Max. Reverse Current
Typical Junction Capacitance
Typical Series Inductance
(per leg)
Max. Voltage Rate of Change
*
IR1
IR2
IR3
IR4
CT
LS
dv/dt
V
mA
mA
Pulse Width < 300µs, Duty Cycle <2%
Thermal-Mechanical Specifications:
Characteristics
Junction Temperature
Storage Temperature Range
Maximum Thermal
Resistance, Case to Heat
Sink
Maximum Thermal
Resistance, Junction to lead
Approximate Weight
Case Style
DO-201AD
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N0181, Rev. -
95SQ015
Green Products
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N0181, Rev. -
95SQ015
Green Products
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales
department for the latest version of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement .
3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or
any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd
assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information,
products or circuits described in the datasheets.
4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any
secondary damage resulting from use at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics
(Nanjing) Co., Ltd.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC
- Sangdest Microelectronics (Nanjing) Co., Ltd.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will
hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third
party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and
regulations..
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
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