15TQ045-S N1541 REV.A

SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N1541, Rev. A
15TQ045-S
Green Products
15TQ045-S SCHOTTKY RECTIFIER
Applications:
•
•
•
•
•
Switching power supply
Redundant power subsystems
Converters
Free-Wheeling diodes
Reverse battery protection
Features:
•
•
•
•
•
•
•
•
175℃ TJ operation
High purity, high temperature epoxy encapsulation for enhanced
mechanical strength and moisture resistance
Low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term reliability
This is a Pb − Free Device
All SMC parts are traceable to the wafer lot
Additional testing can be offered upon request
Mechanical Dimensions: In Inches/mm
TO-220AC(HY)
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
SANGDEST
MICROELECTRONICS
15TQ045-S
Technical Data
Data Sheet N1541, Rev. A
Green Products
Marking Diagram:
Where XXXXX is YYWWL
15TQ045-S
SSG
YY
WW
L
= Part Name
= SSG
= Year
= Week
= Lot Number
Cautions:Molding resin
Epoxy resin UL:94V-0
Ordering Information:
Device
Package
TO-220AC
(Pb-Free)
15TQ045-S
Shipping
50pcs / tube
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification.
Maximum Ratings:
Characteristics
Peak Inverse Voltage
Average Forward Current
Peak One Cycle NonRepetitive Surge Current
Non-repetitive avalanche
energy
Repetitive avalanche current
ESD-rating
Symbol
VRWM
IF(AV)
Condition
50% duty cycle @TC =116°C,
rectangular wave form
Max.
45
IFSM
8.3 ms, half Sine pulse
400
A
Eas
TJ = 25 °C, L = 1mH, IAS = 5 A
15
mJ
5
A
4
KV
IAR
ESD
IAS decay linearly to 0 in 1μs
Frequency limited by TJ max.
VA =1.5 VR
level 2, human body model
15
Units
V
A
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
SANGDEST
MICROELECTRONICS
15TQ045-S
Technical Data
Data Sheet N1541, Rev. A
Green Products
Electrical Characteristics:
Characteristics
Reverse Breakdown Voltage
Forward Voltage Drop
Forward Voltage Drop
VF1
Reverse Current *
IR1
Reverse Current *
IR1
Junction Capacitance
*
Symbol
VBR
VF1
CT
Condition
@ 100uA, Pulse, TA = 25 °C
@ 10A, Pulse, TA = 25 °C
@ 15A, Pulse, TA = 25 °C
@ 10A, Pulse, TA = 125 °C
@ 15A, Pulse, TA = 125 °C
@VR = 20V , TJ = 25 °C
@VR = rated VR , TJ = 25 °C
@VR = rated VR , TJ =125°C
@VR = 20V, TJ =150°C
@VR = 5V, TC = 25 °C
fSIG = 1MHz
Min.
48
-
Typ.
0.50
0.54
0.42
0.46
4
15
10
15
Max.
0.53
0.58
0.45
0.50
50
150
15
50
Units
V
1533
1700
pF
V
V
μA
mA
Pulse Width < 300µs, Duty Cycle <2%
Thermal-Mechanical Specifications:
Characteristics
Junction Temperature
Storage Temperature
Maximum Thermal
Resistance Junction to Case
(per package)
Approximate Weight
Case Style
Symbol
TJ
Tstg
RθJC
wt
Condition
DC operation
-
Specification
-55 to +175
-55 to +175
2.0
Units
°C
°C
2
g
°C/W
TO-220AC
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N1541, Rev. A
15TQ045-S
Green Products
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N1541, Rev. A
15TQ045-S
Green Products
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales
department for the latest version of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement .
3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or
any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd
assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information,
products or circuits described in the datasheets.
4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any
secondary damage resulting from use at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics
(Nanjing) Co., Ltd.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC
- Sangdest Microelectronics (Nanjing) Co., Ltd.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will
hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third
party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and
regulations..
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
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