20SQ045L N1250 REV.A

SANGDEST
MICROELECTRONICS
20SQ045L
Technical Data
Data Sheet N1250, Rev. A
Green Products
20SQ045L SCHOTTKY BARRIER RECTIFIER
Applications:
z
z
z
z
z
DC-DC converters
AC adapter
High frequency rectification circuit
Bypass diodes
Photovoltaic Solar cell Protection Schottky Rectifier
Features:
z
z
z
z
z
Super-high speed & low noise switching
Low voltage drop
This is a Pb − Free Device
All SMC parts are traceable to the wafer lot
Additional testing can be offered upon request
Mechanical Dimensions: In Inches/ mm
R-6
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
SANGDEST
MICROELECTRONICS
20SQ045L
Technical Data
Data Sheet N1250, Rev. A
Green Products
Marking Diagram:
Where XXXXX is YYWWL
20
S
Q
045
L
SSG
YY
WW
L
= Forward Current (20A)
= Package Type
= Device Type
= Reverse Voltage (45V)
= Low VF
= SSG
= Year
= Week
= Lot Number
Cautions:Molding resin
Epoxy resin UL:94V-0
Ordering Information:
Device
Package
R-6
(Pb-Free)
20SQ045L
Shipping
500pcs / reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification.
Maximum Rating:
Characteristics
Repetitive Peak Reverse
Voltage
Max. average forward current
Surge(Non-repetitive)
Forward Current
Symbol
Conditions
-
VRRM
Value
Unit
45
V
IF(AV)
R- load, Ta=25℃
20
A
IFSM
8.3ms single half sine-wave
350
A
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
SANGDEST
MICROELECTRONICS
20SQ045L
Technical Data
Data Sheet N1250, Rev. A
Green Products
Electrical Characteristics(Ta=25℃ Unless otherwise specified)
Characteristics
Peak Forward Voltage
Peak Forward Voltage
Peak Reverse Current
Max. Junction Capacitance
(per leg)
Thermal Resistance(Typical)
Symbol
VFM
VFM
IRRM1
IRRM2
CT
R θJ-c
R θJ-L
Conditions
IFM=20.0A,Ta=25℃
IFM=20.0A,Ta=125℃
Ta=25℃
VRM=VRRM
Ta=125℃
@VR = 5V, TC = 25 °C
fSIG = 1MHz
Between junction and case
Between junction and lead
Max.
Unit
0.50
0.45
1.0
200
V
V
1300
3.0
2.0
mA
pF
℃/W
Thermal-Mechanical Specifications:
Characteristics
Junction Temperature
Storage Temperature
Approximate Weight
Case Style
Symbol
TJ
Tstg
wt
Condition
At reduced reverse voltage:
VR≤80%VRRM
At reduced reverse voltage:
VR≤50%VRRM
In DC forward mode
-
Specification
-55 to +125
Units
°C
-55 to +180
-55 to +200
-55 to +125
2.24
°C
g
R-6
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
SANGDEST
MICROELECTRONICS
20SQ045L
Technical Data
Data Sheet N1250, Rev. A
Green Products
TJ=25℃
1000
100
0
5
10
15
20
25
30
35
40
Instantaneous Reverse Current (mA)
1000.00
TJ=125℃
100.00
10.00
1.00
TJ=25℃
0.10
0.01
10
20
30
40
50
60
70
80
Fig.2-Typical Reverse Characteristics
Fig.1-Typical Junction Capacitance
100
TJ=125℃
10
1
0.1
TJ=25℃
0.2
90
Percent of Rated Peak Reverse Voltage (%)
Reverse Voltage (V)
Instantaneous Forward Current (A)
Junction Capacitance (PF)
10000
0.3
0.4
0.5
0.6
0.7
Forward Voltage Drop (V)
Fig.3-Typical Instantaneous Forward Voltage Characteristics
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
100
SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N1250, Rev. A
20SQ045L
Green Products
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales
department for the latest version of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement .
3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or
any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd
assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information,
products or circuits described in the datasheets.
4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any
secondary damage resulting from use at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics
(Nanjing) Co., Ltd.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC
- Sangdest Microelectronics (Nanjing) Co., Ltd.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will
hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third
party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and
regulations..
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
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