ROHM DTA124GKA_09

-100mA / -50V Digital transistors
(with built-in resistors)
DTA124GKA
 Applications
Inverter, Interface, Driver
 Dimensions (Unit : mm)
DTA124GKA
1.1
2.9
0.4
 Features
1)The built-in bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input, and
parasitic effects are almost completely eliminated.
2)Only the on / off conditions need to be set for operation,
making the device design easy.
3)Higher mounting densities can be achieved.
0.8
1.6
2.8
(3)
(2)
0.15
ROHM : SMT3
EIAJ : SC-59
1.9
0.3Min.
(1)
0.95 0.95
(1) GND
(2) IN
(3) OUT
Abbreviated symbol : K15
 Structure
PNP epitaxial planar silicon transistor
(Resistor built-in type)
 Packaging specifications
Part No.
 Inner circuit
Package
SMT3
Packaging type
Taping
Code
T146
Basic ordering unit (pieces)
3000
DTA124GKA
C
B
−
R
E
 Absolute maximum ratings (Ta=25C)
Symbol
Limits
Unit
Collector-base voltage
VCBO
−50
V
Collector-emitter voltage
VCEO
−50
V
Emitter-base voltage
Parameter
VEBO
−5
V
Collector current
IC
−100
V
Collector power dissipation
PC
200
mA
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
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c 2009 ROHM Co., Ltd. All rights reserved.
○
E : Emitter
C : Collector
B : Base
R=22kΩ
1/2
2009.06 - Rev.C
DTA124GKA
Data Sheet
 Electrical characteristics (Ta=25C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Collector-base breakdown voltage
BVCBO
−50
−
−
V
IC=−50μA
Collector-emitter breakdown voltage
BVCEO
−50
−
−
V
IC=−1mA
Emitter-base breakdown voltage
BVEBO
−5
−
−
V
IE=−330μA
ICBO
−
−
−0.5
μA
VCB=−50V
VEB=−4V
Collector cutoff current
Conditions
IEBO
−140
−
−260
μA
VCE(sat)
−
−
−0.3
V
IC=−10mA, IB=−0.5mA
DC current transfer ratio
hFE
56
−
−
−
IC=−5mA, VCE=−5V
Emitter-base resistance
R
15.4
22
28.6
kΩ
Transition frequency
fT ∗
−
250
−
MHz
Emitter cutoff current
Collector-emitter saturation voltage
−
VCE=−10V, IE=5mA, f=100MHz
∗Characteristics of built-in transistor.
1k
VCE=5V
Ta=100°C
500
DC CURRENT GAIN : hFE
Ta=25°C
200
100
Ta= 40°C
50
20
10
5
2
1
100∝ 200∝ 500∝ 1m
2m
5m
10m 20m
50m 100m
COLLECTOR CURRENT : IC (A)
Fig.1 DC current gain
vs. Collector current
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c 2009 ROHM Co., Ltd. All rights reserved.
○
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
 Electrical characteristic curves
1
IC/IB=20/1
500m
Ta=100°C
Ta=25°C
200m
100m
Ta= 40°C
50m
20m
10m
5m
2m
1m
100∝ 200∝ 500∝ 1m
2m
5m 10m 20m
50m 100m
COLLECTOR CURRENT : IC (A)
Fig.2 Collector-Emitter saturation voltage
vs. Collector current
2/2
2009.06 - Rev.C
Notice
Notes
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