MBR6030WT N0744 REV.A

SANGDEST
MICROELECTRONICS
MBR6030WT
Technical Data
Data Sheet N0744, Rev. A
Green Products
MBR6030WT SCHOTTKY RECTIFIER
Applications:
•
•
•
•
•
Switching power supply
Converters
Free-Wheeling diodes
Reverse battery protection
Center tap configuration
Features:
•
•
•
•
•
•
•
•
•
150°C TJ operation
Center tap TO-247AD package
Low forward voltage drop
High purity, high temperature epoxy encapsulation for enhanced
mechanical strength and moisture resistance
High frequency operation
Guard ring for enhanced ruggedness and long term reliability
This is a Pb − Free Device
All SMC parts are traceable to the wafer lot
Additional testing can be offered upon request
ANODE 1
ANODE 2
1
3
2
COMMON
CATHODE
BASE
Mechanical Dimensions: In mm
OPTION 1(SR)
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
SANGDEST
MICROELECTRONICS
MBR6030WT
Technical Data
Data Sheet N0744, Rev. A
Green Products
OPTION 2(CJ)
TO-247AD
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
SANGDEST
MICROELECTRONICS
MBR6030WT
Technical Data
Data Sheet N0744, Rev. A
Green Products
Marking Diagram:
Where XXXXX is YYWWL
MBR
60
30
WT
SSG
YY
WW
L
= Device Type
= Forward Current (60A)
= Reverse Voltage (30V)
= Configuration
= SSG
= Year
= Week
= Lot Number
Cautions:Molding resin
Epoxy resin UL:94V-0
Ordering Information:
Device
MBR6030WT
Package
Shipping
TO-247AD (Pb-Free)
30pcs/ tube
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification.
Maximum Ratings:
Characteristics
Peak Inverse Voltage
Max. Average Forward
Current
Max. Peak One Cycle NonRepetitive Surge Current
(per leg)
Symbol
VRWM
Max.
30
IF(AV)
Condition
50% duty cycle @TC = 95°C,
rectangular wave form
IFSM
8.3 ms, half Sine pulse
500
60
Units
V
A
A
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
SANGDEST
MICROELECTRONICS
MBR6030WT
Technical Data
Data Sheet N0744, Rev. A
Green Products
Electrical Characteristics:
Characteristics
Max. Forward Voltage
Drop(per leg)*
Max. Reverse Current (per
leg) *
Max. Junction Capacitance
(per leg)
Max. Voltage Rate of Change
*
Symbol
VF1
IR1
CT
dv/dt
Condition
@ 30A, Pulse, TJ = 25 °C
Max.
0.48
Units
V
25
mA
@VR = rated VR
TJ = 25 °C
@VR = 5V, TC = 25 °C
fSIG = 1MHz
-
1600
pF
10,000
V/μs
Condition
DC operation
Specification
-55 to +150
-55 to +150
0.5
Units
°C
°C
K/W
6.7
g
Pulse Width < 300µs, Duty Cycle <2%
Thermal-Mechanical Specifications:
Characteristics
Max. Junction Temperature
Max. Storage Temperature
Maximum Thermal
Resistance Case to heatsink
Approximate Weight
Case Style
Symbol
TJ
Tstg
RthCH
wt
TO-247AD
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N0744, Rev. A
MBR6030WT
Green Products
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales
department for the latest version of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement .
3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or
any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd
assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information,
products or circuits described in the datasheets.
4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any
secondary damage resulting from use at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics
(Nanjing) Co., Ltd.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC
- Sangdest Microelectronics (Nanjing) Co., Ltd.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will
hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third
party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and
regulations..
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •