MBRF5150 N1780 REV.-

MBRF5150
Technical Data
Data Sheet N1780, Rev. -
Green Products
MBRF5150 SCHOTTKY RECTIFIER
Applications:
•
•
•
•
•
Switching power supply
Converters
Free-Wheeling diodes
Reverse battery protection
Center tap configuration
Features:
•
•
•
•
•
•
•
•
150°C TJ operation
Low forward voltage drop
High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
High frequency operation
Guard ring for enhanced ruggedness and long term reliability
This is a Pb − Free Device
All SMC parts are traceable to the wafer lot
Additional testing can be offered upon request
Mechanical Dimensions (In mm)
SYMBOL
A
A1
A2
A3
b
b1
b2
c
D
E
e
e1
H1
L
L1
L2
L3
L4
ΦP1(上口)
ΦP2(下口)
Q
Θ1
Θ2
Θ3
Θ4
Θ5
MIN.
4.30
1.10
2.80
2.50
0.50
1.10
1.50
0.55
14.80
9.96
6.50
12.70
1.60
0.80
0.60
3.30
2.99
2.50
TYP.
4.50
1.30
3.00
2.70
0.60
1.20
1.60
0.60
15.00
10.16
2.55
5.10
6.70
13.20
1.80
1.00
0.80
1.10
3.50
3.19
2.70
5°
4°
10°
5°
5°
ITO-220AC
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MAX.
4.70
1.50
3.20
2.90
0.75
1.35
1.75
0.75
15.20
10.36
6.90
13.70
2.00
1.20
1.00
1.50
3.70
3.39
2.90
MBRF5150
Technical Data
Data Sheet N1780, Rev. -
Green Products
Marking Diagram:
Where XXXXX is YYWWL
MBR
F
5
150
SSG
YY
WW
L
= Device Type
= Package type
= Forward Current (5A)
= Reverse Voltage (150V)
= SSG
= Year
= Week
= Lot Number
Cautions:Molding resin
Epoxy resin UL:94V-0
Ordering Information:
Device
MBRF5150
Package
Shipping
ITO-220AC(Pb-Free)
50pcs/ tube
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification.
Maximum Ratings:
Characteristics
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Forward Current
Symbol
VRRM
VRWM
VR
IF(AV)
Peak One Cycle Non-Repetitive
Surge Current
IFSM
Condition
-
Max.
Units
V
150
50% duty cycle @TC = 100℃,
rectangular wave form
8.3 ms, half Sine pulse
5
A
100
A
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MBRF5150
Technical Data
Data Sheet N1780, Rev. -
Green Products
Electrical Characteristics:
Characteristics
Forward Voltage Drop*
Reverse Current at DC
condition*
Symbol
VF1
VF2
IR1
IR2
Junction Capacitance
CT
Typical Series Inductance
LS
Voltage Rate of Change
*
dv/dt
Condition
@ 5A, Pulse, TJ = 25 °C
@ 5A, Pulse, TJ = 125 °C
@VR = rated VR
TJ = 25 °C
@VR = rated VR
TJ = 125 °C
@VR = 5V, TC = 25 °C
fSIG = 1MHz
Measured lead to lead 5 mm from
package body
-
Max.
0.93
0.73
1.0
Units
V
V
mA
7.0
mA
200
pF
8.0
nH
10,000
V/μs
Specification
-55 to +150
-55 to +150
4.5
Units
°C
°C
°C/W
1.8
g
Pulse Width < 300µs, Duty Cycle <2%
Thermal-Mechanical Specifications:
Characteristics
Junction Temperature
Storage Temperature
Maximum Thermal
Resistance Junction to Case
Approximate Weight
Case Style
Symbol
TJ
Tstg
RθJC
wt
Condition
DC operation
ITO-220AC
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MBRF5150
Technical Data
Data Sheet N1780, Rev. -
Instantaneous Reverse Current-IR(μA)
Green Products
1000
TJ=25℃
100
10
0
5
10
15
20
25
30
35
40
1000
100
TJ=125℃
10
1
TJ=25℃
0.1
0.01
10
Reverse Voltage (V)
20
30
40
50
60
70
80
Fig.2-Typical Reverse Characteristics
100
TJ=125℃
10
TJ=25℃
1
0.5
0.6
90 100
Percent of Rated Peak Reverse Voltage (%)
Fig.1-Typical Junction Capacitance
Instantaneous Forward Current (A)
Junction Capacitance (PF)
10000
0.7
0.8
0.9
1
1.1
Forward Voltage Drop (V)
Fig.3-Typical Instantaneous Forward Voltage Characteristics
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1.2
MBRF5150
Technical Data
Data Sheet N1780, Rev. -
Green Products
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales
department for the latest version of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement .
3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or
any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd
assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information,
products or circuits described in the datasheets.
4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any
secondary damage resulting from use at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics
(Nanjing) Co., Ltd.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC
- Sangdest Microelectronics (Nanjing) Co., Ltd.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will
hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third
party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and
regulations..
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