eGuard0524P Green Products Technical Data Data Sheet N1680 REV.- Description - eGuard™ The eGuard0524P* is an ultra low capacitance TVS (Transient Voltage Suppressor) array designed to protect sensitive semiconductor components from electrical overstress when interfaced to high-speed data lines. The ultra low capacitance (0.35pF typical I/O to I/O) of the eGuard0524P ensures negligible signal attenuation at data rates up to 3.5GHz. The solid-state construction ensures fast clamping of electrical overstress transients resulting from ESD (electrostatic discharge), EFT (Electrical Fast Transients) or CDE (Cable Discharge Events). In addition to ultra low capacitance, the eGuard0524P provides superior surge current capability and excellent voltage clamping performance. The surge current capability (8x20μs) is rated at 7A; approximately 33% higher than industry norms. Furthermore, the tight clamping ratio (VC/VRWM) of 1.9 (typical at 1A) ensures harmful transients are clamped quickly and close to the normal working voltage of the circuit. The super tight clamping ratio is 30% better than industry norms and ensures superior protection of sensitive integrated circuits. The eGuard0524P is designed to protect up to four data lines. It is packaged in a RoHS/WEEE compliant, 10 pin DFN that has a very low package profile of 0.5mm (nominal). The combination of ultra low capacitance, high surge capability, tight clamping ratio and low package profile make the eGuard0524P the ideal choice for today’s ESD sensitive, space constrained applications. Features • • • • • • • • • • • ESD protection in accordance with: IEC 61000-4-2 (ESD) ±17kV (air), ±12kV (contact) IEC 61000-4-5 (lightning) 7A (8/20μs) IEC 61000-4-4 (EFT) 40A (5/50ns) Tight clamping ratio, VC/VRWM, ensures superior protection High reverse surge current, IPP, capability Low idle current minimizes standby power consumption Low profile DFN package Package design optimized for high speed lines Flow-Through design Protects four I/O lines Low capacitance: 0.35pF typical (I/O to I/O) Low operating voltage: 5V Solid-state silicon-avalanche technology Mechanical Characteristics Applications • • • • • • • • • • • • DFNWB2.5×1-10L 10-pin package RoHS/WEEE Compliant Lead Pitch: 0.5mm Lead finish: Pure Sn Marking: Marking Code Packaging: Tape and Reel High Definition Multi-Media Interface (HDMI) Digital Visual Interface (DVI) DisplayPort TM Interface MDDI Ports PCI Express eSATA Interfaces * The eGuard logo is a trademark of SMC Diode Solutions - Sangdest Microelectronics (Nanjing) Co. • China - Germany - Korea - Singapore - United States • • http://www.smc-diodes.com - sales@ smc-diodes.com • eGuard0524P Green Products Technical Data Data Sheet N1680 REV.- Ordering Information: Device Package DFNWB2.5×1-10L (Pb-Free) eGuard0524P Shipping 3000pcs / reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification. Maximum Ratings @TA=25°C unless otherwise specified Parameter Symbol Value Unit Peak Pulse Current (tp=8/20μs) IPP 7 A ESD per IEC 61000-4-2 (Air) ESD per IEC 61000-4-2 (Contact) VESD ±17 ±12 kV TJ -55 to + 150 °C TSTG -55 to + 150 °C Operating Junction Temperature Range Storage Temperature Range Electrical Characteristics: Characteristics Reverse Stand-Off Voltage Reverse Breakdown Voltage Forward Voltage Drop Reverse Leakage Current Clamping Voltage Clamping Voltage Junction Capacitance Junction Capacitance Symbol VRWM VBR VF IR VC VC Cj Cj Condition Any I/O pin to ground @ It=1mA Any I/O pin to ground @ IF=1mA, T = 25 ℃ @VRWM = 5V, T = 25 ℃ Any I/O pin to ground @IPP = 1A, tp=8/20μs Any I/O pin to ground @IPP = 7A, tp=8/20μs Any I/O pin to ground @VR = 0V, fSIG = 1MHz Between I/O pins @VR = 0V, fSIG = 1MHz Any I/O pin to ground Min. - Typ. - Max. 5 Units V 6 - - V - 0.5 0.9 1 V μA - 9.5 10.5 V - - 17 V - 0.35 0.4 pF - 0.65 0.8 pF • China - Germany - Korea - Singapore - United States • • http://www.smc-diodes.com - sales@ smc-diodes.com • eGuard0524P Green Products Technical Data Data Sheet N1680 REV.- Pin Configuration Pin Identification 1, 2, 4, 5 Input Lines 6, 7, 9, 10 Output Lines (No Internal Connection) 3, 8 Ground Marking Diagram: Where 524P is eGuard0524P 524P X = Part name = Marking code for date code Cautions：Molding resin Epoxy resin UL:94V-0 Part Name Information eGuard 05 24 P Suffix P = Ultra-low Capacitance Number of lines 24=2Ground/4Data Lines Max Stand-off Voltage 05=5VRWM (Volts) TVS Arrays Product • China - Germany - Korea - Singapore - United States • • http://www.smc-diodes.com - sales@ smc-diodes.com • eGuard0524P Green Products Technical Data Data Sheet N1680 REV.- Fig.1 Power Derating Curve Fig.2 Pulse Waveform • China - Germany - Korea - Singapore - United States • • http://www.smc-diodes.com - sales@ smc-diodes.com • eGuard0524P Green Products Technical Data Data Sheet N1680 REV.- Fig. 3 Clamping Voltage vs. Peak Pulse Current Fig. 4 Normalized Capacitance vs. Reverse Voltage • China - Germany - Korea - Singapore - United States • • http://www.smc-diodes.com - sales@ smc-diodes.com • eGuard0524P Green Products Technical Data Data Sheet N1680 REV.- Mechanical Dimensions (In mm/Inches): DFNWB2.5×1-10L • China - Germany - Korea - Singapore - United States • • http://www.smc-diodes.com - sales@ smc-diodes.com • eGuard0524P Technical Data Data Sheet N1680 REV.- Green Products DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations.. • China - Germany - Korea - Singapore - United States • • http://www.smc-diodes.com - sales@ smc-diodes.com •