SMP1008-01WTG N1767 REV.-

SMP1008-01WTG
Green Products
Technical Data
Data Sheet N1767 Rev.-
Description
The SMP1008 includes back-to-back TVS diodes fabricated in a proprietary silicon avalanche technology to provide
protection for electronic equipment that may experience destructive electrostatic discharges (ESD). These robust
diodes can safely absorb repetitive ESD strikes above the maximum level specified in the IEC61000-4-2
international standard (±15kV contact discharge) without performance degradation. The back-to-back
configuration provides symmetrical ESD protection for data lines when AC signals are present.
Features
•
•
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•
Applications
ESD protection in accordance with:
IEC 61000-4-2 (ESD) ±15kV (air), ±15kV (contact)
IEC 61000-4-5 (lightning) 2.5A (8/20μs)
IEC 61000-4-4 (EFT) 40A (5/50ns)
Low capacitance of 6 pF @ VR=5V
Low leakage current of 0.1μA at 5V
Space efficient 0201 footprint
Pinout
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•
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Mobile Phones
MP3/PMP
Portable Medical
Camcorders
Smart Phones
eReaders/eBooks
Tablets
Digital Cameras
Functional Block Diagram
HDMI Application Example
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SMP1008-01WTG
Green Products
Technical Data
Data Sheet N1767 Rev.-
Ordering Information:
Device
Package
Marking
Min. Order Qty.
SMP1008-01WTG
0201 Flipship
X
10000
Absolute Maximum Ratings:
Parameter
Symbol
Value
Unit
Peak Pulse Current (tp=8/20μs)
IPP
2.5
A
Operating Temperature
TOP
-40 to + 85
°C
TSTOR
-60 to + 150
°C
Storage Temperature
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only
rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not
implied.
Thermal Information:
Parameter
Value
Unit
-65 to + 150
°C
Maximum Junction Temperature
150
°C
Maximum Lead Temperature
(Soldering 20-40s)
260
°C
Storage Temperature Range
Electrical Characteristics: (TOP=25°C)
Characteristics
Reverse Stand-Off Voltage
Breakdown Voltage
Reverse Leakage Current
Clamping Voltage1
Symbol
VRWM
VBR
ILEAK
VC
ESD With stand Voltage1
VESD
Dynamic Resistance
Junction Capacitance1
RDYN
CD
Condition
IR = 1mA
VR =5V with 1pin at GND
IPP = 1A, tp=8/20μs, Fwd
IPP = 2A, tp=8/20μs, Fwd
IEC61000-4-2
(Contact Discharge)
IEC61000-4-2
(Air Discharge)
(VC2-VC1)/(IPP2-IPP1)
Reverse Bias=0V
Reverse Bias=5.0V
Min.
-
Typ.
7.0
0.1
10.7
Max.
6.0
8.5
-
Units
V
V
μA
V
±15
12.0
-
-
V
kV
±15
-
-
kV
-
1.3
9
6
9
Ω
pF
Note: 1. Parameter is guaranteed by design and/or device characterization.
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SMP1008-01WTG
Green Products
Technical Data
Data Sheet N1767 Rev.-
Marking Diagram
Part Name Information
SMP 1008 – 01 W T G
G= Green
T= Tape & Reel
X
Package
W: 0201 Flipchip
Number of Channels
Series
TVS Diode Arrays
Pulse Waveform
Clamping Voltage vs. IPP
Insertion Loss (S21) I/O to GND
Capacitance vs. Reverse Bias
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SMP1008-01WTG
Green Products
Technical Data
Data Sheet N1767 Rev.-
Mechanical Dimensions (In mm/Inches):
0201 Flipchip
Symbol
Millimeters
Inches
Min
Typ
Max
Min
Typ
Max
A
0.595
0.620
0.645
0.0234
0.0244
0.0254
B
0.295
0.320
0.345
0.0116
0.0126
0.0136
C
0.245
0.275
0.305
0.0096
0.0108
0.0120
D
0.145
0.150
0.155
0.0057
0.0059
0.0061
E
0.245
0.250
0.255
0.0096
0.0098
0.0100
F
0.245
0.250
0.255
0.0096
0.0098
0.0100
G
0.005
0.010
0.015
0.0002
0.0004
0.0006
Embossed Carrier Tape & Reel Speciication — 0201 Flipchip
Symbol
Millimeters
A0
B0
D
D1
E
F
K0
0.41+/-0.03
0.70+/-0.03
Φ 1.50 + 0.10
Φ 0.20 +/- 0.05
1.75+/-0.10
3.50+/-0.05
0.38+/-0.03
P0
2.00+/-0.05
P1
2.00+/-0.05
P2
4.00+/-0.10
W
8.00+0.30/-0.10
T
0.23+/-0.02
Recommended Solder Pad Footprint
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SMP1008-01WTG
Technical Data
Data Sheet N1767 Rev.-
Green Products
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales
department for the latest version of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement .
3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or
any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd
assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information,
products or circuits described in the datasheets.
4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any
secondary damage resulting from use at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics
(Nanjing) Co., Ltd.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC
- Sangdest Microelectronics (Nanjing) Co., Ltd.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will
hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third
party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and
regulations..
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