2929

NTE2929
MOSFET
N−Channel, Enhancement Mode
TO−220 Full Pack Type Package
Features:
D Low Drain−Source ON Resistance: RDS(on) = 2.3W Typ
D High Forward Transfer Admittance: |Yfs| = 4.4S Typ
D Low Leakage Current: IDSS = 100mA Max (VDS = 720V)
D Enhancement Mode: Vth = 2.0 to 4.0V (VDS = 10V, ID = 1mA)
Applications:
D DC−DC Converter
D Motor Driver
D
G
S
Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
Drain−Source Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900V
Drain−Gate Voltage (RGS = 20kW), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900V
Gate−Source Voltage, VGSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Drain Current (Note 1), ID
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A
Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A
Drain Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45W
Single Pulsed Avalanche Energy (Note 2), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 595mJ
Avalanche Current, IAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A
Repetitive Avalanche Energy (Note 3), EAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.5mJ
Channel Temperature, Tch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C
Maximum Thermal Resistance, Channel−to−Case, RthCHC . . . . . . . . . . . . . . . . . . . . . . . . . . 2.78C/W
Maximum Thermal Resistance, Channel−to−Ambient, RthCHA . . . . . . . . . . . . . . . . . . . . . . . 62.5C/W
Note 1. Please use device on condition that the channel temperature is below +150C.
Note 2. L = 43.6mH, IAR = 5A, VDD = 90V, RG = 25W, Tch = +25C (initial).
Note 3. Repetitive rating; Pulse width limited by maximum channel temperature.
Rev. 9−14
Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter
Gate Leakage Current
Gate−Source Breakdown Voltage
Drain Cut−Off Current
Drain−Source Breakdown Voltage
Gate Threshold Voltage
Symbol
Test Conditions
Min
Typ
Max
Unit
IGSS
VGS = 30V, VDS = 0V
−
−
10
mA
V(BR)GSS
VDS = 0V, IG = 10mA
30
−
−
V
IDSS
VDS = 720V, VGS = 0
−
−
100
mA
V(BR)DSS
VGS = 0V, ID = 10mA
500
−
−
V
Vth
VDS = 10V, ID = 1mA
2.0
−
4.0
V
Drain−Source ON Resistance
RDS(on)
VGS = 10V, ID = 3A
−
2.3
2.5
W
Forward Transfer Admittance
|Yfs|
VDS = 20V, ID = 3A
1.1
4.4
−
S
Input Capacitance
Ciss
−
1200
−
pF
Output Capacitance
Coss
VGS = 0V, VDS = 25V,
f = 1MHz
−
120
−
pF
Reverse Transfer Capacitance
Crss
−
20
−
pF
Turn−On Delay Time
td(on)
−
90
−
ns
−
40
−
ns
td(off)
−
200
−
ns
tf
−
60
−
ns
−
45
−
nC
Rise Time
Turn−Off Delay Time
Fall Time
tr
VDD = 200V, ID = 3A,
VGS = 10V, RL = 66.7W, Note 4
Total Gate Charge
Qg
Gate−Source Charge
Qgs
−
25
−
nC
Gate−Drain (Miller) Charge
Qgd
−
20
−
nC
VDD = 400V, ID = 5A, VGS = 10V
Drain−Source Diode Characteristics and Maximum Ratings
Continuous Drain-Source Reverse Current
IDR
Note 1
−
−
5
A
Pulsed Drain-Source Reverse Current
IDRP
Note 1
−
−
15
A
Diode Forward Voltage
VDSF
VGS = 0V, IDR = 5A
−
−
−1.9
V
Reverse Recovery Time
trr
−
1300
−
ns
Reverse Recovery Charge
Qrr
VGS = 0V, IDR = 5A,
dIDR/dt = 100A/ms
−
11
−
mC
Note 1. Please use device on condition that the channel temperature is below +150C.
Note 4. Duty Cycle  1%, tw = 10ms.
.177 (4.5)
.394 (10.0)
.108
(2.75)
.169
(4.3)
.335
(8.5)
Isol
.590
(15.0)
G
D
S
.150
(3.8)
.532
(13.5)
Min
.100 (2.54)
.090 (2.3)