Off-Line PWM Controllers with Integrated Power MOSFET STR4A100 Series Data Sheet Description Package The STR4A100 series are power ICs for switching power supplies, incorporating a sense MOSFET and a current mode PWM controller IC. The low standby power is accomplished by the automatic switching between the PWM operation in normal operation and the burst-oscillation under light load conditions. The product achieves high cost-performance power supply systems with few external components. DIP8 Not to Scale Lineup ● Electrical Characteristics Features VD/ST(max.) = 730 V ● Current Mode Type PWM Control ● Auto Standby Function No Load Power Consumption < 10 mW ● Operation Mode Normal Operation: PWM Mode Standby : Burst Oscillation Mode ● Random Switching Function ● Slope Compensation Function ● Leading Edge Blanking Function ● Bias Assist Function ● Soft Start Function ● Protections − Overcurrent Protection (OCP) : Pulse-by-Pulse, built-in compensation circuit to minimize OCP point variation on AC input voltage − Overload Protection (OLP) : Aauto-restart − Overvoltage Protection (OVP) : Auto-restart − Thermal Shutdown (TSD) : Auto-restart with hysteresis Products Package STR4A162S SOIC8 STR4A162D PC1 P U1 D1 S 4 S/GND 8 S/GND FB/OLP 100kHz Adapter 0.520 A 12.9 Ω 0.485 A Open frame AC230V AC85 ~265V AC230V AC85 ~265V STR4A162S 5W 4W 7W 5.5 W STR4A162D 5.5 W 4.5 W 7.5 W 6W STR4A164D 8W 6W 10 W 8.5 W STR4A164HD 9W 7W 13 W 10.5 W * The output power is actual continues power that is measured at Application R54 R51 R52 U51 D2 VCC DIP8 Products C53 C52 R53 6 S/GND 12.9 Ω ● Output Power, POUT* R55 C51 STR4A100 7 0.365 A VOUT (+) R1 C5 C1 5 24.6 Ω L2 D51 T1 D/ST IDLIM(H) 65kHz DIP8 STR4A164HD RDS(ON) (max.) 50 °C ambient. The peak output power can be 120 to 140 % of the value stated here. Core size, ON Duty, and thermal design affect the output power. It may be less than the value stated here. BR1 S/GND fOSC(AVG) STR4A164D Typical Application VAC SOIC8 R2 R56 (-) 2 C2 1 D ● ● ● ● ● White goods Auxiliary power for Flat TVs Low power AC/DC adapter Battery Chargers Other SMPS PC1 C3 C6 TC_STR4A100_1_R1 STR4A100 - DSJ Rev.3.3 SANKEN ELECTRIC CO.,LTD. Aug.06, 2015 http://www.sanken-ele.co.jp © SANKEN ELECTRIC CO.,LTD. 2011 1 STR4A100 Series CONTENTS Description ------------------------------------------------------------------------------------------------------ 1 CONTENTS ---------------------------------------------------------------------------------------------------- 2 1. Absolute Maximum Ratings ----------------------------------------------------------------------------- 3 2. Recommended Operating Conditions ----------------------------------------------------------------- 3 3. Electrical Characteristics -------------------------------------------------------------------------------- 4 4. Performance Curves -------------------------------------------------------------------------------------- 6 5. Block Diagram --------------------------------------------------------------------------------------------- 7 6. Pin Configuration Definitions --------------------------------------------------------------------------- 7 7. Typical Application --------------------------------------------------------------------------------------- 8 8. External Dimensions -------------------------------------------------------------------------------------- 8 9. Marking Diagram ----------------------------------------------------------------------------------------- 9 10. Operational Description ------------------------------------------------------------------------------- 10 10.1 Startup Operation --------------------------------------------------------------------------------- 10 10.2 Undervoltage Lockout (UVLO) ---------------------------------------------------------------- 10 10.3 Bias Assist Function------------------------------------------------------------------------------- 10 10.4 Soft Start Function -------------------------------------------------------------------------------- 11 10.5 Constant Output Voltage Control-------------------------------------------------------------- 11 10.6 Leading Edge Blanking Function -------------------------------------------------------------- 12 10.7 Random Switching Function -------------------------------------------------------------------- 12 10.8 Automatic Standby Mode Function ----------------------------------------------------------- 12 10.9 Overcurrent Protection (OCP) ----------------------------------------------------------------- 13 10.9.1 OCP Operation ------------------------------------------------------------------------------ 13 10.9.2 OCP Input Compensation Function ----------------------------------------------------- 13 10.10 Overload Protection (OLP) ---------------------------------------------------------------------- 13 10.11 Overvoltage Protection (OVP) ------------------------------------------------------------------ 14 10.12 Thermal Shutdown (TSD) ----------------------------------------------------------------------- 14 11. Design Notes ---------------------------------------------------------------------------------------------- 15 11.1 External Components ---------------------------------------------------------------------------- 15 11.1.1 Input and Output Electrolytic Capacitor ----------------------------------------------- 15 11.1.2 FB/OLP Pin Peripheral Circuit ---------------------------------------------------------- 15 11.1.3 VCC Pin Peripheral Circuit --------------------------------------------------------------- 15 11.1.4 D/ST Pin --------------------------------------------------------------------------------------- 16 11.1.5 Peripheral circuit of secondary side shunt regulator --------------------------------- 16 11.1.6 Transformer ---------------------------------------------------------------------------------- 16 11.2 PCB Trace Layout and Component Placement --------------------------------------------- 17 12. Pattern Layout Example ------------------------------------------------------------------------------- 19 13. Reference Design of Power Supply ------------------------------------------------------------------ 20 OPERATING PRECAUTIONS -------------------------------------------------------------------------- 22 IMPORTANT NOTES ------------------------------------------------------------------------------------- 23 STR4A100 - DSJ Rev.3.3 SANKEN ELECTRIC CO.,LTD. Aug.06, 2015 http://www.sanken-ele.co.jp © SANKEN ELECTRIC CO.,LTD. 2011 2 STR4A100 Series 1. Absolute Maximum Ratings ● The polarity value for current specifies a sink as "+," and a source as "−," referencing the IC. ● Unless otherwise specified TA = 25 °C, 5 pin = 6 pin = 7 pin = 8 pin Parameter Symbol Test Conditions Pins Rating Units FB/OLP Pin Voltage VFB 1–5 − 0.3 to 14 V FB/OLP Pin Sink Current IFB 1–5 1.0 mA VCC Pin Voltage VCC 2–5 32 V D/ST Pin Voltage VD/ST 4–5 − 0.3 to 730 V − 0.2 to 0.66 Drain Peak Current IDP Positive: Single pulse Negative: Within 2μs of pulse width 4–5 4A162S − 0.2 to 0.7 A 4A162D 4A164D 4A164HD 4A162S W 4A162D 4A164D 4A164HD − 0.2 to 0.98 1.34 Power Dissipation(1) PD 1.49 – (2) 1.55 Operating Ambient Temperature Storage Temperature Junction Temperature (1) (2) Notes TOP – − 40 to 125 °C Tstg – − 40 to 125 °C Tj – 150 °C Refer to Section 0 MOSFET Temperature versus Power Dissipation Curve When embedding this hybrid IC onto the printed circuit board (cupper area in a 15mm×15mm) 2. Recommended Operating Conditions Recommended operating conditions means the operation conditions maintained normal function shown in electrical characteristics. Parameter Symbol Min. Max. Units D/ST Pin Voltage in Operation VD/ST(OP) − 0.3 584 V VCC Pin Voltage in Operation VCC(OP) 11 27 V STR4A100 - DSJ Rev.3.3 SANKEN ELECTRIC CO.,LTD. Aug.06, 2015 http://www.sanken-ele.co.jp © SANKEN ELECTRIC CO.,LTD. 2011 Notes 3 STR4A100 Series 3. Electrical Characteristics ● The polarity value for current specifies a sink as "+," and a source as "−," referencing the IC ● Unless otherwise specified, TA = 25 °C, VCC = 18 V, 5 pin = 6 pin = 7 pin = 8 pin, VFB = 3 V, VD/ST = 10 V Parameter Symbol Conditions Pins Min. Typ. Max. Units Notes 2−8 13.8 15.2 16.8 V 2−8 7.3 8.1 8.9 V VCC = 12 V 2−8 − − 2.5 mA VFB = 0 V VCC = 13.5 V VFB = 0 V VCC = 13.5 V VD/ST = 100 V 8−3 19 29 39 V 2−8 − 3.7 − 2.1 − 0.9 mA VFB = 0 V 2−8 7.9 9.4 10.5 V 58 65 72 90 100 110 4A164HD − 5 − 4A162S / 62D/ 46D − 7 − 65 74 83 65 73 82 4A164HD − 290 − 4A162S / 62D/ 46D − 250 − − 36 − 0.290 0.322 0.354 0.413 0.459 0.505 0.385 0.428 0.471 4A164HD 0.336 0.365 0.394 4A162S/ 62D 0.478 0.520 0.562 0.446 0.485 0.524 Power Supply Startup Operation Operation Start Voltage Operation Stop Voltage (1) Circuit Current in Operation VCC(ON) VFB = 0 V VCC(OFF) ICC(ON) Startup Circuit Operation Voltage VSTARTUP Startup Current ISTARTUP Startup Current Biasing Threshold Voltage(1) VCC(BIAS) PWM Operation Average PWM Switching Frequency PWM Frequency Modulation Deviation Maximum ON Duty 8−3 fOSC(AVG) Δf 8−3 8−3 DMAX kHz kHz 4A162S / 62D/ 46D 4A164HD % 4A162S / 62D/ 46D Protection Function Leading Time(2) Edge Blanking Drain Current Limit Compensation ON Duty(2) Drain Current Limit (ON Duty = 0 %) Drain Current Limit (ON Duty ≥ 36 %) − tBW − DDPC 4−8 IDLIM(L) 4−8 IDLIM(H) ns 4A164HD % 4A162S/ 62D A A IFB(MAX) VCC = 12 V VFB = 0 V 1−8 − 120 − 77 − 45 µA Minimum Feedback Current FB/OLP Pin Oscillation Stop Threshold Voltage IFB(MIN) VFB = 6.8 V 1−8 − 28 − 13 −6 µA VFB(OFF) 1−8 0.98 1.23 1.48 V OLP Threshold Voltage VFB(OLP) 1−8 7.3 8.1 8.9 V OLP Operation Current ICC(OLP) 2−8 − 230 − µA (1) (2) 4A164D 4A164HD Maximum Feedback Current VFB = OPEN 4A164D VCC(BIAS) > VCC(OFF) always Design assurance STR4A100 - DSJ Rev.3.3 SANKEN ELECTRIC CO.,LTD. Aug.06, 2015 http://www.sanken-ele.co.jp © SANKEN ELECTRIC CO.,LTD. 2011 4 STR4A100 Series Parameter OLP Delay Time Symbol Pins Min. Typ. Max. Units − 58 76 94 ms VFB(CLAMP) 1−8 10.5 12.0 13.5 V VCC(OVP) 2−8 27.5 29.5 31.5 V Tj(TSD) − 135 − − °C Tj(TSDHYS) − − 70 − °C 4−8 − − 50 µA − 21.0 24.6 − 11.0 12.9 − − 250 − − 18 − − 21 − − 16 4A164D / 64HD − − 15 4A162D − − 16 − − 15 tOLP FB/OLP Pin Clamp Voltage OVP Threshold Voltage Thermal Shutdown Operating Temperature(2) Thermal Shutdown Hysteresis(2) Conditions VFB = OPEN Notes MOSFET Drain Leakage Current On Resistance IDSS RDS(ON) Switching Time Ta = 125 °C VFB = 0 V VD/ST = 584 V ID = 37 mA 4−8 ID = 52 mA 4−8 tf Ω 4A162×× 4A164×× ns Thermal Characteristics θj-F Thermal Resistance (3) − (2) θj-C (4) − 4A162D °C/W °C/W 4A162S 4A162S 4A164D / 64HD (3) θj-F is thermal resistance between junction of MIC and frame. Frame temperature (TF) is measured at the root of the 7 pin (S/GND). (4) θj-C is thermal resistance between junction of MIC and case. Case temperature (TC) is measured at the center of the case top surface STR4A100 - DSJ Rev.3.3 SANKEN ELECTRIC CO.,LTD. Aug.06, 2015 http://www.sanken-ele.co.jp © SANKEN ELECTRIC CO.,LTD. 2011 5 STR4A100 Series 4. Performance Curves STR4A162S Ambient Temperature versus Power Dissipation Curve Transient Thermal Resistance Curve 1.6 10 PD = 1.34 W 1.2 Transient Thermal Resistance θj-c (°C /W) Power Dissipation, PD (W) 1.4 1 0.8 0.6 0.4 0.2 0 0 25 50 75 100 125 150 1 0.1 0.01 1μ 1.0E-06 10μ 1.0E-05 100μ 1.0E-04 Ambient Temperature, TA (°C ) 1m 1.0E-03 10m 1.0E-02 100m 1.0E-01 10m 1.0E-02 100m 1.0E-01 1.0E-02 10m 1.0E-01 100m Time (s) STR4A162D Ambient Temperature versus Power Dissipation Curve Transient Thermal Resistance Curve 10 1.6 PD = 1.49 W Transient Thermal Resistance θj-c (°C /W) Power Dissipation, PD (W) 1.4 1.2 1 0.8 0.6 0.4 0.2 0 1 0.1 0.01 0 25 50 75 100 125 1μ 1.0E-06 150 10μ 1.0E-05 100μ 1.0E-04 Ambient Temperature, TA (°C ) 1m 1.0E-03 Time (s) STR4A164D / 64HD Ambient Temperature versus Power Dissipation Curve Transient Thermal Resistance Curve 1.8 10 PD = 1.55 W Transient Thermal Resistance θj-c (°C /W) Power Dissipation, PD (W) 1.6 1.4 1.2 1 0.8 0.6 0.4 1 0.1 0.2 0 0 25 50 75 100 125 150 0.01 1.0E-06 1μ 1.0E-05 10μ 1.0E-04 100μ Ambient Temperature, TA (°C ) STR4A100 - DSJ Rev.3.3 SANKEN ELECTRIC CO.,LTD. Aug.06, 2015 http://www.sanken-ele.co.jp © SANKEN ELECTRIC CO.,LTD. 2011 1.0E-03 1m Time (s) 6 STR4A100 Series 5. Block Diagram VCC D/ST 2 STARTUP UVLO REG PWM OSC S Q VREG OVP 4 TSD DRV R OCP VCC OLP Feedback Control FB/OLP Drain Peak Current Compensation LEB 1 Slope Compensation 5~8 S/GND BD_STR4A100_R1 6. Pin Configuration Definitions Pin Name FB/OLP 1 8 S/GND 1 FB/OLP VCC 2 7 S/GND 2 VCC 3 6 S/GND 3 ― 4 4 D/ST 5 S/GND D/ST Descriptions Input of constant voltage control signal and Overload Protection (OLP) signal Power supply voltage input for Control Part and Overvoltage Protection (OVP) signal input (Pin removed) MOSFET drain and startup current input 5 6 7 S/GND MOSFET source and ground 8 STR4A100 - DSJ Rev.3.3 SANKEN ELECTRIC CO.,LTD. Aug.06, 2015 http://www.sanken-ele.co.jp © SANKEN ELECTRIC CO.,LTD. 2011 7 STR4A100 Series 7. Typical Application The PCB traces of the S/GND pins should be as wide as possible, in order to enhance thermal dissipation. In applications having a power supply specified such that D/ST pin has large transient surge voltages, a clamp snubber circuit of a capacitor-resistor-diode (CRD) combination should be added on the primary winding P, or a damper snubber circuit of a capacitor (C) or a resistor-capacitor (RC) combination should be added between the D/ST pin and the S/GND pin. VAC CRD clamp snubber BR1 C1 C（RC） Damper snubber L2 D51 T1 VOUT (+) R1 C5 PC1 P C4 R55 C51 D1 U1 S/GND 5 D/ST R52 S S/GND U51 7 8 D2 VCC S/GND FB/OLP C53 C52 R53 4 6 S/GND R54 R51 R2 R56 (-) 2 C2 1 D PC1 STR4A100 C3 C6 TC_STR4A100_2_R1 Figure 7-1 Typical application 8. External Dimensions ● DIP8 NOTES: ● All liner dimensions are in mm (inches) ● Pb-free. Device composition compliant with the RoHS directive STR4A100 - DSJ Rev.3.3 SANKEN ELECTRIC CO.,LTD. Aug.06, 2015 http://www.sanken-ele.co.jp © SANKEN ELECTRIC CO.,LTD. 2011 8 STR4A100 Series ● SOIC8 Land Pattern Example (not to scale) NOTES: ● All liner dimensions are in inches ● Pb-free. Device composition compliant with the RoHS directive 1.6 (0.063) 3.8 (0.15) 1.27 (0.0500) 9. 0.61 (0.024) Unit : mm (inch) Marking Diagram 8 Part Number（4A1××S、4A1××D、4A1××HD） YMD 1 Lot Number Y = Last Digit of Year (0-9) M = Month (1-9,O,N or D) D =Period of days (1 to 3) 1 : 1st to 10th 2 : 11th to 20th 3 : 21st to 31st Sanken Control Number STR4A100 - DSJ Rev.3.3 SANKEN ELECTRIC CO.,LTD. Aug.06, 2015 http://www.sanken-ele.co.jp © SANKEN ELECTRIC CO.,LTD. 2011 9 STR4A100 Series 10. Operational Description All of the parameter values used in these descriptions are typical values, unless they are specified as minimum or maximum. With regard to current direction, "+" indicates sink current (toward the IC) and "–" indicates source current (from the IC). The startup time of the IC is determined by C2 capacitor value. The approximate startup time t START is calculated as follows: t START C2 × VCC( ON )－VCC( INT ) (2) I CC(ST ) Where, tSTART : Startup time of the IC (s) VCC(INT) : Initial voltage on the VCC pin (V) 10.1 Startup Operation Figure 10-1 shows the circuit around the VCC pin. The IC incorporates the startup circuit. The circuit is connected to D/ST pin. When the D/ST pin voltage reaches to Startup Circuit Operation Voltage VSTARTUP = 29 V, the startup circuit starts operation. During the startup process, the constant current, ISTARTUP = − 2.1 mA, charges C2 at the VCC pin. When VCC pin voltage increases to VCC(ON) = 15.2 V, the control circuit starts switching operation. During the IC operation, the voltage rectified the auxiliary winding voltage, VD, of Figure 10-1 becomes a power source to the VCC pin. After switching operation begins, the startup circuit turns off automatically so that its current consumption becomes zero. 10.2 Undervoltage Lockout (UVLO) Figure 10-2 shows the relationship of the VCC pin voltage and circuit current ICC. When VCC pin voltage decreases to VCC(OFF) = 8.1 V, the control circuit stops operation by UVLO (Undervoltage Lockout) circuit, and reverts to the state before startup. Circuit current, ICC Stop Start T1 D1 VAC C1 P VCC（OFF） 4 D/ST U1 VCC 2 D2 C2 S/GND R2 VD Figure 10-2 Relationship between VCC pin voltage and ICC D 5~8 10.3 Bias Assist Function Figure 10-1 VCC pin peripheral circuit The approximate value of auxiliary winding voltage is 15 to 20 V, taking account of the winding turns of D winding so that the VCC pin voltage becomes Equation (1) within the specification of input and output voltage variation of power supply. VCC( BIAS) (max .) VCC VCC(OVP ) (min .) ⇒10.5 (V) < VCC < 27.5 (V) VCC（ON） VCC pin voltage (1) By the Bias Assist Function, the startup failure is prevented. When FB pin voltage is the FB/OLP Pin Oscillation Stop Threshold Voltage, VFB(OFF)= 1.23 V or less and VCC pin voltage decreases to the Startup Current Biasing Threshold Voltage, VCC(BIAS) = 9.4 V, the Bias Assist Function is activated. When the Bias Assist Function is activated, the VCC pin voltage is kept almost constant voltage, VCC(BIAS) by providing the startup current, ISTARTUP, from the startup circuit. Thus, the VCC pin voltage is kept more than VCC(OFF). Since the startup failure is prevented by the Bias Assist Function, the value of C2 connected to the VCC pin can be small. Thus, the startup time and the response time of the Overvoltage Protection (OVP) become shorter. The operation of the Bias Assist Function in startup is as follows. It is necessary to check and adjust the startup STR4A100 - DSJ Rev.3.3 SANKEN ELECTRIC CO.,LTD. Aug.06, 2015 http://www.sanken-ele.co.jp © SANKEN ELECTRIC CO.,LTD. 2011 10 STR4A100 Series process based on actual operation in the application, so that poor starting conditions may be avoided. Figure 10-3 shows the VCC pin voltage behavior during the startup period. After the VCC pin voltage increases to VCC(ON) = 15.2 V at startup, the IC starts the operation. Then circuit current increases and the VCC pin voltage decreases. At the same time, the auxiliary winding voltage, VD, increases in proportion to output voltage. These are all balanced to produce the VCC pin voltage. When the VCC pin voltage is decrease to VCC(OFF) = 8.1 V in startup operation, the IC stops switching operation and a startup failure occurs. When the output load is light at startup, the output voltage may become more than the target voltage due to the delay of feedback circuit. In this case, the FB pin voltage is decreased by the feedback control. When the FB pin voltage decreases to VFB(OFF) or less, the IC stops switching operation and the VCC pin voltage decreases. When the VCC pin voltage decreases to VCC(BIAS), the Bias Assist function is activated and the startup failure is prevented. VCC pin voltage Startup success IC starts operation Target operating voltage Increase with rising of output voltage VCC(ON) VCC(BIAS) VCC(OFF) Bias assist period Startup failure Time Figure 10-3 VCC pin voltage during startup period 10.4 Soft Start Function Figure 10-4 shows the behavior of VCC pin voltage and drain current during the startup period. The IC activates the soft start circuitry during the startup period. Soft start time is fixed to around 6 ms. during the soft start period, overcurrent threshold is increased step-wisely (5 steps). This function reduces the voltage and the current stress of a power MOSFET and the secondary side rectifier diode. Since the Leading Edge Blanking Function (refer to Section 10.6) is deactivated during the soft start period, there is the case that ON time is less than the Leading Edge Blanking Time, tBW. After the soft start period, D/ST pin current, ID, is limited by the Drain Current Limit, IDLIM, until the output voltage increases to the target operating voltage. This period is given as t LIM. In case tLIM is longer than the OLP Delay Time, tOLP, the output power is limited by the Overload Protection (OLP) operation. Thus, it is necessary to adjust the value of output capacitor and the turn ratio of auxiliary winding D so that the tLIM is less than tOLP = 58 ms (min.). VCC pin voltage Startup of IC Startup of SMPS Normal opertion tSTART VCC(ON) VCC(OFF) Time D/ST pin current, ID Soft start period approximately 6 ms (fixed) IDLIM tLIM < tOLP (min.) Time Figure 10-4 VCC and ID behavior during startup 10.5 Constant Output Voltage Control The IC achieves the constant voltage control of the power supply output by using the current-mode control method, which enhances the response speed and provides the stable operation. The FB/OLP pin voltage is internally added the slope compensation at the feedback control (refer to Section 5.Block Diagram), and the target voltage, VSC, is generated. The IC compares the voltage, VROCP, of a current detection resistor with the target voltage, VSC, by the internal FB comparator, and controls the peak value of VROCP so that it gets close to VSC, as shown in Figure 10-5 and Figure 10-6. ● Light load conditions When load conditions become lighter, the output voltage, VOUT, increases. Thus, the feedback current from the error amplifier on the secondary-side also increases. The feedback current is sunk at the FB/OLP pin, transferred through a photo-coupler, PC1, and the FB/OLP pin voltage decreases. Thus, VSC decreases, and the peak value of VROCP is controlled to be low, and the peak drain current of ID decreases. This control prevents the output voltage from increasing. ● Heavy load conditions When load conditions become greater, the IC performs the inverse operation to that described above. Thus, VSC increases and the peak drain current of ID increases.This control prevents the output voltage from decreasing. In the current mode control method, when the drain current waveform becomes trapezoidal in continuous operating mode, even if the peak current level set by the STR4A100 - DSJ Rev.3.3 SANKEN ELECTRIC CO.,LTD. Aug.06, 2015 http://www.sanken-ele.co.jp © SANKEN ELECTRIC CO.,LTD. 2011 11 STR4A100 Series target voltage is constant, the on-time fluctuates based on the initial value of the drain current. This results in the on-time fluctuating in multiples of the fundamental operating frequency as shown in Figure 10-7. This is called the subharmonics phenomenon. In order to avoid this, the IC incorporates the Slope Compensation Function. Because the target voltage is added a down-slope compensation signal, which reduces the peak drain current as the on-duty gets wider relative to the FB/OLP pin signal to compensate V SC, the subharmonics phenomenon is suppressed. Even if subharmonic oscillations occur when the IC has some excess supply being out of feedback control, such as during startup and load shorted, this does not affect performance of normal operation. STR4A100 FB Comp. VROCP FB/OLP ROCP 10.6 Leading Edge Blanking Function The constant voltage control of output of the IC uses the peak-current-mode control method. In peak-current-mode control method, there is a case that the power MOSFET turns off due to unexpected response of a FB comparator or Overcurrent Protection (OCP) circuit to the steep surge current in turning on a power MOSFET. In order to prevent this response to the surge voltage in turning-on the power MOSFET, the Leading Edge Blanking Time, tBW, is built-in. 10.7 Random Switching Function The IC modulates its switching frequency randomly by superposing the modulating frequency on fOSC(AVG) in normal operation. This function reduces the conduction noise compared to others without this function, and simplifies noise filtering of the input lines of power supply. S/GND 1 5~8 10.8 Automatic Standby Mode Function PC1 IFB C3 Figure 10-5 FB/OLP pin peripheral circuit Target voltage including slope compensation - VSC + VROCP Output current, IOUT Voltage on both sides of ROCP FB comparator In light load, FB/OLP pin voltage according to decreasing drain current, ID. Automatic standby mode is activated automatically when FB/OLP pin voltage decreases to VFB(OFF). The operation mode becomes burst oscillation, as shown in Figure 10-8. Below several kHz Drain current, ID Drain current, ID Normal operation Figure 10-6 Drain current, ID, and FB comparator operation in steady operation Target voltage without slope compensation tON1 T tON2 T Burst oscillation T Figure 10-7 Drain current, ID, waveform in subharmonic oscillation Standby operation Normal operation Figure 10-8 Auto Standby mode timing Burst oscillation mode reduces switching losses and improves power supply efficiency because of periodic non-switching intervals. Generally, in order to improve efficiency under light load conditions, the frequency of the burst oscillation mode becomes just a few kilohertz. Because the IC suppresses the peak drain current well during burst oscillation mode, audible noises can be reduced. If VCC pin voltage decreases to VCC(BIAS) = 9.4 V during the transition to the burst oscillation mode, the Bias Assist Function is activated and stabilizes the Standby mode operation, because the Startup Current, ISTARTUP is provided to the VCC pin so that the VCC pin STR4A100 - DSJ Rev.3.3 SANKEN ELECTRIC CO.,LTD. Aug.06, 2015 http://www.sanken-ele.co.jp © SANKEN ELECTRIC CO.,LTD. 2011 12 voltage does not decrease to VCC(OFF). However, if the Bias Assist Function is always activated during steady-state operation including standby mode, the power loss increases. Therefore, the VCC pin voltage should be more than VCC(BIAS), for example, by adjusting the turns ratio of the auxiliary winding and the secondary-side winding and/or reducing the value of R2 in Figure 11-2 (refer to Section 11.1 Peripheral Components for a detail of R2) 10.9 Overcurrent Protection (OCP) Drain Current Limit after compensation, IDLIM' STR4A100 Series 0.520 STR4A164D 0.5 STR4A164HD 0.485 0.459 0.428 0.4 0.365 STR4A162D/62S DDPC=36% 0.322 0.3 0 DMAX=74% 50 100 ON Duty (%) 10.9.1 OCP Operation Overcurrent Protection (OCP) detects each drain peak current level of a power MOSFET on pulse-by-pulse basis, and limits the output power when the current level reaches to OCP threshold voltage. Figure 10-9 Relationship between ON Duty and Drain Current Limit after compensation 10.10 Overload Protection (OLP) 10.9.2 OCP Input Compensation Function ICs with PWM control usually have some propagation delay time. The steeper the slope of the actual drain current at a high AC input voltage is, the larger the actual drain peak current is, compared to the Drain Current Limit. Thus, the peak current has some variation depending on AC input voltage in OCP state. In order to reduce the variation of peak current in OCP state, the IC has Input Compensation Function. This function corrects the Drain Current Limit depending on AC input voltage, as shown in Figure 10-9. When AC input voltage is low (ON Duty is broad), the Drain Current Limit is controlled to become high. The difference of peak drain current become small compared with the case where the AC input voltage is high (ON Duty is narrow). The compensation signal depends on ON Duty. The relation between the ON Duty and the Drain Current Limit after compensation, IDLIM', is expressed as Equation (3). When ON Duty is broader than 36 %, the the Drain Current Limit becomes a constant value IDLIM(H). I DLIM ' I DLIM( H ) I DLIM( L) 36(%) Duty I DLIM( L ) (3) where, Duty : MOSFET ON Duty (%) IDLIM(H) : Drain current limit (ON Duty ≥ 36 %) IDLIM(L) : Drain current limit (ON Duty = 0 %) Products IDLIM(H) IDLIM(L) 4A162D / 62S 0.365 A 0.322 A 4A164HD 0.485 A 0.428A 4A164D 0.520 A 0.459 A Figure 10-10 shows the FB/OLP pin peripheral circuit, and Figure 10-11 shows each waveform for Overload Protection (OLP) operation. When the peak drain current of ID is limited by Overcurrent Protection operation, the output voltage, VOUT, decreases and the feedback current from the secondary photo-coupler becomes zero. Thus, the feedback current, IFB, charges C3 connected to the FB/OLP pin and FB/OLP pin voltage increases. When the FB/OLP pin voltage increases to VFB(OLP) = 8.1 V or more for the OLP delay time, tOLP = 76 ms or more, the OLP is activated, the IC stops switching operation. During OLP operation, Bias Assist Function is disabled. Thus, VCC pin voltage decreases to VCC(OFF), the control circuit stops operation. After that, the IC reverts to the initial state by UVLO circuit, and the IC starts operation when VCC pin voltage increases to VCC(ON) by startup current. Thus the intermittent operation by UVLO is repeated in OLP state. This intermittent operation reduces the stress of parts such as a power MOSFET and secondary side rectifier diodes. In addition, this operation reduces power consumption because the switching period in this intermittent operation is short compared with oscillation stop period. When the abnormal condition is removed, the IC returns to normal operation automatically. U1 S/GND FB/OLP 1 5~8 2 PC1 C3 VCC D2 R2 C2 D Figure 10-10 FB/OLP pin peripheral circuit STR4A100 - DSJ Rev.3.3 SANKEN ELECTRIC CO.,LTD. Aug.06, 2015 http://www.sanken-ele.co.jp © SANKEN ELECTRIC CO.,LTD. 2011 13 STR4A100 Series Junction temperature Tj Non-switching interval Tj(TSD) VCC pin voltage VCC(ON) Tj(TSD)−Tj(TSD)HYS VCC(OFF) FB/OLP pin voltage ON Bias Assist Function tOLP VFB(OLP) OFF tOLP ON OFF VCC pin voltage VCC(OVP) VCC(ON) Drain current, ID Figure 10-11 OLP operational waveforms 10.11 Overvoltage Protection (OVP) When a voltage between the VCC pin and the S/GND pin increases to VCC(OVP) = 29.5 V or more, Overvoltage Protection (OVP) is activated and the IC stops switching operation. During OVP operation, the Bias Assist Function is disabled, the intermittent operation by UVLO is repeated (refer to Section 10.10). When the fault condition is removed, the IC returns to normal operation automatically (refer to Figure 10-12). Figure 10-13 shows OVP operational waveforms at high temperature. If OVP is activated in the condition that the junction temperature, Tj, of IC is higher than Tj(TSD)−Tj(TSD)HYS, the OVP operations as below. When the VCC pin voltage decreases to VCC(OFF), the Bias Assist Function is activated. When Tj reduces to less than Tj(TSD)−Tj(TSD)HYS, the Bias Assist Function is disabled and the VCC pin voltage decreases to VCC(OFF). Release condition of OVP at high temperature is Tj ≤ (Tj(TSD)−Tj(TSD)HYS) and VCC pin voltage ≤ VCC(OFF). VCC pin voltage VCC(OVP) VCC(ON) VCC(OFF) Drain current, ID Figure 10-12 OVP operational waveforms VCC(BIAS) VCC(OFF) Drain current ID Figure 10-13 OVP operational waveforms at high temperature When VCC pin voltage is provided by using auxiliary winding of transformer, the VCC pin voltage is proportional to output voltage. Thus, the VCC pin can detect the overvoltage conditions such as output voltage detection circuit open. The approximate value of the output voltage VOUT(OVP) in OVP condition is calculated by using Equation (4). VOUT(OVP) VOUT ( NORMAL ) VCC( NORMAL ) 29.5 (V) (4) Where, VOUT(NORMAL): Output voltage in normal operation VCC(NORMAL): VCC pin voltage in normal operation 10.12 Thermal Shutdown (TSD) Figure 10-14 shows the TSD operational waveforms. When the temperature of control circuit increases to Tj(TSD) = 135 °C or more, Thermal Shutdown (TSD) is activated and the IC stops switching operation. After that, VCC pin voltage decreases. When the VCC pin voltage decreases to VCC(BIAS), the Bias Assist Function is activated and the VCC pin voltage is kept to over the VCC(OFF). When the temperature reduces to less than Tj(TSD)−Tj(TSD)HYS, the Bias Assist Function is disabled and the VCC pin voltage decreases to VCC(OFF). At that time, the IC stops operation and reverts to the state before startup. After that, the startup circuit is activated, the VCC pin voltage increases to VCC(ON), and the IC starts switching operation again. In this way, the intermittent operation by the TSD and the UVLO is repeated while there is an excess thermal condition. When the fault condition is removed, the IC returns to normal operation automatically. STR4A100 - DSJ Rev.3.3 SANKEN ELECTRIC CO.,LTD. Aug.06, 2015 http://www.sanken-ele.co.jp © SANKEN ELECTRIC CO.,LTD. 2011 14 STR4A100 Series 11.1.2 FB/OLP Pin Peripheral Circuit C3 (see Figure 11-1) is for high frequency noise rejection and phase compensation, and should be connected close to the FB/OLP pin and the S/GND pin. The value of C3 is recommended to be about 2200 pF to 0.01 µF, and should be selected based on actual operation in the application. Junction Temperature, Tj Tj(TSD) Tj(TSD)−Tj(TSD)HYS Bias assist function ON ON OFF OFF 11.1.3 VCC Pin Peripheral Circuit VCC pin voltage VCC(ON) VCC(BIAS) VCC(OFF) Drain current ID Figure 10-14 TSD operational waveforms 11. Design Notes 11.1 External Components Take care to use properly rated, including derating as necessary and proper type of components. BR1 The value of C2 in Figure 11-1 is generally recommended to be 10 µF to 47 μF (refer to Section 10.1 Startup Operation, because the startup time is determined by the value of C2) In actual power supply circuits, there are cases in which the VCC pin voltage fluctuates in proportion to the output current, IOUT (see Figure 11-2), and the Overvoltage Protection (OVP) on the VCC pin may be activated. This happens because C2 is charged to a peak voltage on the auxiliary winding D, which is caused by the transient surge voltage coupled from the primary winding when the power MOSFET turns off. For alleviating C2 peak charging, it is effective to add some value R2, of several tenths of ohms to several ohms, in series with D2 (see Figure 11-1). The optimal value of R2 should be determined using a transformer matching what will be used in the actual application, because the variation of the auxiliary winding voltage is affected by the transformer structural design. T1 VAC R1 C5 P VCC pin voltage Without R2 C1 U1 S/GND 5 D1 D/ST 4 S/GND 6 7 8 D2 S/GND VCC S/GND FB/OLP R2 With R2 2 C2 1 C3 D Output current, IOUT PC1 Figure 11-2 Variation of VCC pin voltage and power Figure 11-1 The IC peripheral circuit 11.1.1 Input and Output Electrolytic Capacitor Apply proper derating to ripple current, voltage, and temperature rise. Use of high ripple current and low impedance types, designed for switch mode power supplies, is recommended. STR4A100 - DSJ Rev.3.3 SANKEN ELECTRIC CO.,LTD. Aug.06, 2015 http://www.sanken-ele.co.jp © SANKEN ELECTRIC CO.,LTD. 2011 15 STR4A100 Series 11.1.4 D/ST Pin Figure 11-3 shows D/ST pin peripheral circuit and Figure 11-4 shows D/ST pin waveform in normal operation. The internal power MOSFET connected to D/ST pin is permanently damaged when the D/ST pin voltage and the current exceed the Absolute Maximum Ratings. The D/ST pin voltage is tuned to be less than about 90 % of the Absolute Maximum Ratings (657 V) in all condition of actual operation, and the value of transformer and components should be selected based on actual operation in the application. And the D/ST pin voltage in normal operation is tuned to be the Recommended Operating Conditions, VD/ST(OP) < 584 V. The fast recovery diodes are recommended for using as D1, D2 and D51. (for D1, SARS is also recommended) 11.1.5 Peripheral circuit of secondary side shunt regulator Figure 11-5 shows the secondary side detection circuit with the standard shunt regulator IC (U51). C52 and R53 are for phase compensation. The value of C52 and R53 are recommended to be around 0.047 μF to 0.47 μF and 4.7 kΩ to 470 kΩ, respectively. They should be selected based on actual operation in the application. L51 T1 VOUT (+) D51 PC1 R55 C51 VAC BR1 D51 T1 C5 R1 S R54 R51 R52 C53 C52 R53 C51 P C1 U51 D1 U1 S R56 (-) 4 D/ST VCC 2 D2 R2 Figure 11-5 Peripheral circuit of secondary side shunt regulator (U51) Control C2 D S/GND 5~8 11.1.6 Transformer Figure 11-3 D/ST pin peripheral circuit D/ST pin voltage < 657 V VD/ST(OP) < 584 V Time Figure 11-4 D/ST pin voltage waveform in normal operation Apply proper design margin to core temperature rise by core loss and copper loss. Because the switching currents contain high frequency currents, the skin effect may become a consideration. Choose a suitable wire gauge in consideration of the RMS current and a current density of 4 to 6 A/mm2. If measures to further reduce temperature are still necessary, the following should be considered to increase the total surface area of the wiring: ● Increase the number of wires in parallel. ● Use litz wires. ● Thicken the wire gauge. In the following cases, the surge of VCC pin voltage becomes high. ● The surge voltage of primary main winding, P, is high (low output voltage and high output current power supply designs) ● The winding structure of auxiliary winding, D, is susceptible to the noise of winding P. When the surge voltage of winding D is high, the VCC pin voltage increases and the Overvoltage STR4A100 - DSJ Rev.3.3 SANKEN ELECTRIC CO.,LTD. Aug.06, 2015 http://www.sanken-ele.co.jp © SANKEN ELECTRIC CO.,LTD. 2011 16 STR4A100 Series Protection (OVP) may be activated. In transformer design, the following should be considered; ● The coupling of the winding P and the secondary output winding S should be maximized to reduce the leakage inductance. ● The coupling of the winding D and the winding S should be maximized. ● The coupling of the winding D and the winding P should be minimized. In the case of multi-output power supply, the coupling of the secondary-side stabilized output winding, S1, and the others (S2, S3…) should be maximized to improve the line-regulation of those outputs. Figure 11-6 shows the winding structural examples of two outputs. ● Winding structural example (a): S1 is sandwiched between P1 and P2 to maximize the coupling of them for surge reduction of P1 and P2. D is placed far from P1 and P2 to minimize the coupling to the primary for the surge reduction of D. ● Winding structural example (b) P1 and P2 are placed close to S1 to maximize the coupling of S1 for surge reduction of P1 and P2. D and S2 are sandwiched by S1 to maximize the coupling of D and S1, and that of S1 and S2. This structure reduces the surge of D, and improves the line-regulation of outputs. Bobbin Margin tape P1 S1 P2 S2 D Margin tape Winding structural example (a) Bobbin Margin tape P1 S1 D S2 S1 P2 Margin tape Winding structural example (b) Figure 11-6 Winding structural examples 11.2 PCB Trace Layout and Component Placement Since the PCB circuit trace design and the component layout significantly affects operation, EMI noise, and power dissipation, the high frequency PCB trace should be low impedance with small loop and wide trace. In addition, the ground traces affect radiated EMI noise, and wide, short traces should be taken into account. Figure 11-7 shows the circuit design example. (1) Main Circuit Trace Layout: This is the main trace containing switching currents, and thus it should be as wide trace and small loop as possible. If C1 and the IC are distant from each other, placing a capacitor such as film capacitor (about 0.1 μF and with proper voltage rating) close to the transformer or the IC is recommended to reduce impedance of the high frequency current loop. (2) Control Ground Trace Layout Since the operation of IC may be affected from the large current of the main trace that flows in control ground trace, the control ground trace should be separated from main trace and connected at a single point as close to the S/GND pin as possible. (3) VCC Trace Layout: This is the trace for supplying power to the IC, and thus it should be as small loop as possible. If C2 and the IC are distant from each other, placing a capacitor such as film capacitor Cf (about 0.1 μF to 1.0 μF) close to the VCC pin and the S/GND pin is recommended. (4) FB/OLP Trace Layout The components connected to FB/OLP pin should be as close to FB/OLP pin as possible. The trace between the components and FB/OLP pin should be as short as possible. (5) Secondary Rectifier Smoothing Circuit Trace Layout: This is the trace of the rectifier smoothing loop, carrying the switching current, and thus it should be as wide trace and small loop as possible. If this trace is thin and long, inductance resulting from the loop may increase surge voltage at turning off the power MOSFET. Proper rectifier smoothing trace layout helps to increase margin against the power MOSFET breakdown voltage, and reduces stress on the clamp snubber circuit and losses in it. (6) Thermal Considerations Because the power MOSFET has a positive thermal coefficient of RDS(ON), consider it in thermal design. Since the copper area under the IC and the S/GND pin trace act as a heatsink, its traces should be as wide as possible. STR4A100 - DSJ Rev.3.3 SANKEN ELECTRIC CO.,LTD. Aug.06, 2015 http://www.sanken-ele.co.jp © SANKEN ELECTRIC CO.,LTD. 2011 17 STR4A100 Series (1) Main trace should be wide trace and small loop (5) Main trace of secondary side should be wide trace and small loop T1 D51 R1 C5 C1 P C4 S D1 5 6 7 8 (2) Control ground trace should be connected at a single point as close to the S/GND as possible D/ST S/GND 4 NC (6)Trace of S/GND pin should be wide for heat release C51 S/GND D2 VCC S/GND S/GND 2 FB/OLP U1 (4)The components connected to FB/OLP pin should be as close to FB/OLP pin as possible R2 C2 1 C3 D PC1 C9 (3) Loop of the power supply should be small Figure 11-7 Peripheral circuit example around the IC STR4A100 - DSJ Rev.3.3 SANKEN ELECTRIC CO.,LTD. Aug.06, 2015 http://www.sanken-ele.co.jp © SANKEN ELECTRIC CO.,LTD. 2011 18 STR4A100 Series 12. Pattern Layout Example The following show the two outputs PCB pattern layout example and the schematic of circuit using SOIC8 type of STR4A100 series. Top view Bottom view Slit width: 1 mm Figure 12-1 PCB circuit trace layout example (SOIC8 type) F1 C51 R51 L51 L1 RC1 5 T1 6, 7 D50 JW1 VOUT (+) VAC JW3 C3 C1 C2 R53 PC1 R2 P1 U1 7 D2 S/GND VCC S/GND FB/OLP R52 R54 JW2 3 4 S/GND 6 C52 R56 C54 C53 Z51 NC 5 D/ST S1 D1 C6 S/GND R55 R1 9, 10 R57 (-) 2 2 JW4 8 1 D PC1 C4 1 C5 JW5 C7 Figure 12-2 Circuit schematic for PCB circuit trace layout STR4A100 - DSJ Rev.3.3 SANKEN ELECTRIC CO.,LTD. Aug.06, 2015 http://www.sanken-ele.co.jp © SANKEN ELECTRIC CO.,LTD. 2011 19 STR4A100 Series 13. Reference Design of Power Supply As an example, the following show the power supply specification, the circuit schematic, the bill of materials, and the transformer specification. ● Power supply specification IC Input voltage Maximum output power Output voltage Output current STR4A162S AC85V to AC265V 5 W (peak) 5V 1 A (max.) ● Circuit schematic Refer to Figure 12-2 ● Bill of materials Symbol RC1 F1 L1 C1 C2 C3 C4 C5 C6 C7 C51 (2) (2) (2) C52 Part type Ratings(1) Recommended Sanken Parts Part type Ratings(1) Schottky Metal oxide, chip General, chip General, chip General, chip General, chip General, chip General, chip General, chip General, 1% Inductor 60 V, 3 A 680 kΩ 47 Ω Open 560 Ω 6.8 kΩ 5.6 kΩ 6.8 kΩ 0Ω 2.2 kΩ 5 μH PC123 or equiv See the specification Symbol General, chip Fuse CM inductor Electrolytic Electrolytic Ceramic, chip Electrolytic Ceramic, chip Ceramic, chip Ceramic, chip Ceramic, chip 800 V, 1 A AC 250 V, 1 A 470 μH 400 V, 6.8 μF 400 V, 6.8 μF 630 V, 680 pF 50 V, 10 µF 50 V, 4700 pF Open 250 V,680 pF Open D50 R1 R2 R51 R52 R53 R54 R55 R56 R57 L51 Electrolytic 16 V, 1000 μF PC1 (3) (2) (2) Photo-coupler C53 (2) Electrolytic 50 V, 0.47 μF T1 Transformer C54 (2) Electrolytic Open U1 IC D5 General, chip 800V, 1A SARS05 U50 Shunt regulator Recommended Sanken Parts SJPB-L6 STR4A162S VREF = 2.5 V TL431 or equiv D6 First recovery 250 V, 250 mA Unless otherwise specified, the voltage rating of capacitor is 50 V or less and the power rating of resistor is 1/8 W or less. (2) It is necessary to be adjusted based on actual operation in the application. (3) Resistors applied high DC voltage and of high resistance are recommended to select resistors designed against electromigration or use combinations of resistors in series for that to reduce each applied voltage, according to the requirement of the application. (1) STR4A100 - DSJ Rev.3.3 SANKEN ELECTRIC CO.,LTD. Aug.06, 2015 http://www.sanken-ele.co.jp © SANKEN ELECTRIC CO.,LTD. 2011 20 STR4A100 Series ● Transformer specification ・ ・ ・ ・ Primary inductance, LP : 2.0 mH Core size : EI-16 Al-value : 108 nH/N2 (Center gap of about 0.15 mm) Winding specification Winding Symbol Number of turns (T) Wire diameter (mm) Construction Primary winding P1 136 φ 0.20 Four layers, solenoid winding Output winding S1 8 φ 0.32 × 2 Single-layer, solenoid winding Auxiliary winding D 21 φ 0.20 Single-layer, solenoid winding D S1 VDC P1 D/ST P1 S1 VCC Bobbin Core 5V GND D GND STR4A100 - DSJ Rev.3.3 SANKEN ELECTRIC CO.,LTD. Aug.06, 2015 http://www.sanken-ele.co.jp © SANKEN ELECTRIC CO.,LTD. 2011 ● : Start at this pin 21 STR4A100 Series OPERATING PRECAUTIONS In the case that you use Sanken products or design your products by using Sanken products, the reliability largely depends on the degree of derating to be made to the rated values. Derating may be interpreted as a case that an operation range is set by derating the load from each rated value or surge voltage or noise is considered for derating in order to assure or improve the reliability. In general, derating factors include electric stresses such as electric voltage, electric current, electric power etc., environmental stresses such as ambient temperature, humidity etc. and thermal stress caused due to self-heating of semiconductor products. For these stresses, instantaneous values, maximum values and minimum values must be taken into consideration. In addition, it should be noted that since power devices or IC’s including power devices have large self-heating value, the degree of derating of junction temperature affects the reliability significantly. Because reliability can be affected adversely by improper storage environments and handling methods, please observe the following cautions. Cautions for Storage ● Ensure that storage conditions comply with the standard temperature (5 to 35°C) and the standard relative humidity (around 40 to 75%); avoid storage locations that experience extreme changes in temperature or humidity. ● Avoid locations where dust or harmful gases are present and avoid direct sunlight. ● Reinspect for rust on leads and solderability of the products that have been stored for a long time. Cautions for Testing and Handling When tests are carried out during inspection testing and other standard test periods, protect the products from power surges from the testing device, shorts between the product pins, and wrong connections. Ensure all test parameters are within the ratings specified by Sanken for the products. Remarks About Using Thermal Silicone Grease ● When thermal silicone grease is used, it shall be applied evenly and thinly. If more silicone grease than required is applied, it may produce excess stress. ● The thermal silicone grease that has been stored for a long period of time may cause cracks of the greases, and it cause low radiation performance. In addition, the old grease may cause cracks in the resin mold when screwing the products to a heatsink. ● Fully consider preventing foreign materials from entering into the thermal silicone grease. When foreign material is immixed, radiation performance may be degraded or an insulation failure may occur due to a damaged insulating plate. ● The thermal silicone greases that are recommended for the resin molded semiconductor should be used. Our recommended thermal silicone grease is the following, and equivalent of these. Type Suppliers G746 Shin-Etsu Chemical Co., Ltd. YG6260 Momentive Performance Materials Japan LLC SC102 Dow Corning Toray Co., Ltd. Soldering ● When soldering the products, please be sure to minimize the working time, within the following limits: 260 ± 5 °C 10 ± 1 s (Flow, 2 times) 380 ± 10 °C 3.5 ± 0.5 s (Soldering iron, 1 time) ● Soldering should be at a distance of at least 1.5 mm from the body of the products (DIP8). Electrostatic Discharge ● When handling the products, the operator must be grounded. Grounded wrist straps worn should have at least 1MΩ of resistance from the operator to ground to prevent shock hazard, and it should be placed near the operator. ● Workbenches where the products are handled should be grounded and be provided with conductive table and floor mats. ● When using measuring equipment such as a curve tracer, the equipment should be grounded. ● When soldering the products, the head of soldering irons or the solder bath must be grounded in order to prevent leak voltages generated by them from being applied to the products. ● The products should always be stored and transported in Sanken shipping containers or conductive containers, or be wrapped in aluminum foil. STR4A100 - DSJ Rev.3.3 SANKEN ELECTRIC CO.,LTD. Aug.06, 2015 http://www.sanken-ele.co.jp © SANKEN ELECTRIC CO.,LTD. 2011 22 STR4A100 Series IMPORTANT NOTES ● The contents in this document are subject to changes, for improvement and other purposes, without notice. Make sure that this is the latest revision of the document before use. ● Application examples, operation examples and recommended examples described in this document are quoted for the sole purpose of reference for the use of the products herein and Sanken can assume no responsibility for any infringement of industrial property rights, intellectual property rights, life, body, property or any other rights of Sanken or any third party which may result from its use. ● Unless otherwise agreed in writing by Sanken, Sanken makes no warranties of any kind, whether express or implied, as to the products, including product merchantability, and fitness for a particular purpose and special environment, and the information, including its accuracy, usefulness, and reliability, included in this document. ● Although Sanken undertakes to enhance the quality and reliability of its products, the occurrence of failure and defect of semiconductor products at a certain rate is inevitable. Users of Sanken products are requested to take, at their own risk, preventative measures including safety design of the equipment or systems against any possible injury, death, fires or damages to the society due to device failure or malfunction. ● Sanken products listed in this document are designed and intended for the use as components in general purpose electronic equipment or apparatus (home appliances, office equipment, telecommunication equipment, measuring equipment, etc.). When considering the use of Sanken products in the applications where higher reliability is required (transportation equipment and its control systems, traffic signal control systems or equipment, fire/crime alarm systems, various safety devices, etc.), and whenever long life expectancy is required even in general purpose electronic equipment or apparatus, please contact your nearest Sanken sales representative to discuss, prior to the use of the products herein. The use of Sanken products without the written consent of Sanken in the applications where extremely high reliability is required (aerospace equipment, nuclear power control systems, life support systems, etc.) is strictly prohibited. ● When using the products specified herein by either (i) combining other products or materials therewith or (ii) physically, chemically or otherwise processing or treating the products, please duly consider all possible risks that may result from all such uses in advance and proceed therewith at your own responsibility. ● Anti radioactive ray design is not considered for the products listed herein. ● Sanken assumes no responsibility for any troubles, such as dropping products caused during transportation out of Sanken’s distribution network. ● The contents in this document must not be transcribed or copied without Sanken’s written consent. STR4A100 - DSJ Rev.3.3 SANKEN ELECTRIC CO.,LTD. Aug.06, 2015 http://www.sanken-ele.co.jp © SANKEN ELECTRIC CO.,LTD. 2011 23