76

NTE76
Silicon NPN Transistor
Broadband CATV Amplifier
Description:
The NTE76 is an NPN transistor in a TO117 type case designed to be utilized in broadband linear
amplifier circuitry such as CATV trunk, bridger, and line extender amplifiers.
Features:
D High Gain−Bandwidth Product: fT = 1.5GHz
D Low Intermodulation, Low Cross−Modulation Distortion: X−MOD = −50dB
D Low Noise Figure: NF = 2.7dB
D High Power Gain: GVE = 10dB
Absolute Maximum Ratings: (TC = +25°C)
Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Maximum Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mA
Total Device Dissipation (TA = +25°C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W
Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +200°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65° to +150°C
Thermal Resistance, Junction to Case, RΘJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +35°C/W
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ Max Unit
OFF Characteristics
Collector−Emitter Breakdown Voltage
V(BR)CEO IC = 5mA, IB = 0, Note 1
30
−
−
V
Collector−Base Breakdown Voltage
V(BR)CBO IC = 0.1mA, IE = 0
50
−
−
V
Emitter−Base Breakdown Voltage
V(BR)EBO IE = 0.1mA, IC = 0
5
−
−
V
−
−
0.1
mA
Collector Cutoff Current
ICEO
Note 1. Pulsed through 25mH Inductor.
VCE =, 20V, IB = 0
Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ Max Unit
ON Characteristics
DC Current Gain
hFE
VCE = 20V, IC = 70mA
30
−
300
Collector Output Capacitance
Cob
VCB = 30V, IE = 0, f = 1MHz
−
2.6
4.0
pF
Collector Input Capacitance
Cib
VEB = 0.5V, IC = 0, f = 1MHz
−
8.0
10
pF
Dynamic Characteristics
Functional Test
Noise Figure
Narrow Band
NFNB
VCE = 10V, IC = 10mA,
f = 200MHz
−
2.7
−
dB
Broad Band
NFBB
VCE = 22V, IC = 70mA,
f = 216MHz
−
7.5
9.0
dB
GVE
VCE = 22V, IC = 70mA,
f = 260MHz
10
11
−
dB
X−MOD VCE = 22V, IC = 70mA,
PO = +50dBmV, Note 2
−
−53
−50
dB
−
−55
−50
dB
Power Gain at Optimum Noise Figure
Cross−Modulation
2nd O
Second Order Distortion
VCE = 22V, IC = 70mA,
PO = +50dBmV, Note 3
Note 2. 12 Channel Flat −− NCTA Channel 2 through 12 100% Mod (Square wave) Channel 13CW
Note 3. Channel 2 and Channel G Intermod Product on Channel 13
Collector
.500
(12.7)
Min
45°
Emitter
Emitter
.034 (0.88) Max
Base
.210 (5.33) Max
.460 (11.68)
Max
.290 (7.36) Dia Max
.017 (0.45) Max
.140 (3.55) Max
8−32 UNC−2A
.260 (6.60) Max
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