295

NTE295
Silicon NPN Transistor
RF Power Output, Driver
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V
Collector–Emitter Voltage (RBE = 150Ω), VCER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5A
Collector Dissipation (TA = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 750mW
Collector Dissipation (TC = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector Cutoff Current
ICBO
VCB = 40V, IE = 0
–
–
1.0
µA
Emitter Cutoff Current
IEBO
VEB = 4V, IC = 0
–
–
1.0
µA
Collector–Base Breakdown Voltage
V(BR)CBO IC = 10µA, IE = 0
75
–
–
V
Collector–Emitter Breakdown Voltage
V(BR)CER IC = 1mA, RBE = 150Ω
75
–
–
V
V(BR)CEO IC = 1mA, RBE = ∞
45
–
–
V
V(BR)EBO IE = 10µA, IC = 0
5
–
–
V
Emitter–Base Breakdown Voltage
DC Current Gain
hFE
VCE = 5V, IC = 500mA
60
–
320
fT
VCE = 10V, IC = 50mA
180
250
–
Collector–Emitter Saturation Voltage
VCE(sat)
IC = 500mA, IB = 50mA
–
0.2
0.6
V
Base–Emitter Saturation Voltage
VBE(sat)
IC = 500mA, IB = 50mA
–
0.9
1.2
V
–
15
25
pF
1.0
1.8
–
W
60
–
–
%
Current Gain Bandwidth Product
Output Capacitance
Cob
VCB = 10V, f = 1MHz
Output Power
PO
VCC = 12V, f = 27MHz, Pi = 35mW
Collector Efficiency
η
.330 (8.38) Max
.175
(4.45)
Max
.450
(11.4)
Max
.118
(3.0)
Dia
.655
(16.6)
Max
.030 (.762) Dia
E
C
B
.090 (2.28)
.130 (3.3)
Max