2327

NTE2327
Silicon NPN Transistor
High Voltage, High Speed Switch
Description:
The NTE2327 is a silicon NPN transistor in a TO126 type package designed for use in converters,
inverters, switching regulators, motor control systems and switching applications.
Absolute Maximum Ratings:
Collector–Emitter Voltage (VBE = 0, Peak value), VCESM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000V
Collector–Emitter Voltage (Open base), VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450V
Emitter–Base Voltage (Open Collector), VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5A
Peak (tp = 2ms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Base Current, IB
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.2A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.3A
Reverse Base Current (Peak Value, Note 1), –IBM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.3A
Total Power Dissipation (TMB ≤ +60°C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Thermal Resistance, Junction–to–Mounting Base, RthJMB . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.5K/W
Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100K/W
Note 1. Turn–Off current.
Electrical Characteristics: (TJ = +25°C unless otherwise specified)
Parameter
Collector Cutoff Current (Note 2)
Symbol
ICES
Test Conditions
Min
Typ
Max
Unit
VCEM = 1000V, VBE = 0
–
–
100
µA
VCEM = 1000V, VBE = 0, TJ = +125°C
–
–
1
mA
mA
Emitter Cutoff Current
IEBO
IC = 0, VEB = 5V
–
–
1
DC Current Gain
hFE
IC –= 50mA, VCE = 5V
–
50
–
IC = 0.1A, IB = 10mA
–
–
0.8
V
IC = 0.2A, IB = 20mA
–
–
1.0
V
IC = 0.2A, IB = 20mA
–
–
1.0
V
VCEO(sus) IC = 100mA, IBoff = 0, L = 25mH
450
–
–
V
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Collector–Emitter Sustaining Voltage
VCE(sat)
VBE(sat)
Transition Frequency
fT
IC = 50mA, VCE = 10V, f = 1MHz
–
20
–
MHz
Turn–On Time
ton
–
0.25
0.50
µs
Storage Time
ts
ICon = 0.2A, VCC = 250V,
IBon = 20mA, –IBoff = 40mA
–
2.0
3.5
µs
Fall Time
tf
–
0.4
1.3
µs
Note 2. Measured with a half sine–wave voltage.
.330 (8.38) Max
.175
(4.45)
Max
.450
(11.4)
Max
.118
(3.0)
Dia
.655
(16.6)
Max
.030 (.762) Dia
E
C
B
.090 (2.28)
.130 (3.3)
Max