2504

NTE2504
Silicon NPN Transistor
High Gain Audio Amplifier
Features:
D Large Current Capacity (IC = 2A)
D Adoption of MBIT Process
D High DC Current Gain: hFE = 800 to 3200
D Low Collector–Emitter Saturation Voltage: VCE(sat) < 0.5V
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Collector Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2W
Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector Cutoff Current
ICBO
VCB = 20V, IE = 0
–
–
0.1
µA
Emitter Cutoff Current
IEBO
VEB = 10V, IC = 0
–
–
0.1
µA
DC Current Gain
hFE
VCE = 5V, IC = 500mA
800
fT
VCE = 10V, IC = 50mA
–
260
–
MHz
Cob
VCE = 10V, f = 1MHz
–
27
–
pF
Current Gain–Bandwidth Product
Output Capacitance
1500 3200
Collector–Emitter Saturation Voltage
VCE(sat)
IC = 1A, IB = 20mA
–
0.15
0.5
V
Base–Emitter Saturation Voltage
VBE(sat)
IC = 1A, IB = 20mA
–
0.85
1.2
V
30
–
–
V
Collector–Base Breakdown Voltage
V(BR)CBO IC = 10A, IE = 0
.315 (8.0)
.106 (2.7)
.433
(11.0)
E
C
B
.610
(15.5)
.094 (2.4)