2510

NTE2510
Silicon NPNTransistor
High Frequency Video Output
Features:
D High Gain Bandwidth Product: fT = 2GHz
D High Current Capacity: IC = 500mA
Applications:
D High–Definition CRT Display Video Output
D Wide–Band Amp
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–to–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Collector–to–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Emitter–to–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000mA
Collector Dissipation, PC
TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.3W
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector Cutoff Current
ICBO
VCB = 20V, IE = 0
–
–
0.1
µA
Emitter Cutoff Current
IEBO
VEB = 2V, IC = 0
–
–
5.0
µA
DC Current Gain
hFE
VCE = 5V, IC = 50mA
60
–
120
VCE = 5V, IC = 500mA
20
–
–
VCE = 5V, IC = 100mA
–
2.0
–
Gain Bandwidth Product
fT
GHz
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Output Capacitance
Cob
VCB = 10V, f = 1MHz
–
6.0
–
pF
Reverse Transfer Capacitance
Cre
VCB = 10V, f = 1MHz
–
4.6
–
pF
Collector–Emitter Saturation Voltage
VCE(sat)
IC = 300mA, IB = 30mA
–
0.3
0.8
V
Base–Emitter Saturation Voltage
VBE(sat)
IC = 300mA, IB = 30mA
–
0.9
1.2
V
.315 (8.0)
.130
(3.3)
.118 (3.0)
Dia
.433
(11.0)
.295
(7.5)
E
C
B
.610
(15.5)
.094 (2.4)