NTE2992 MOSFET N−Channel, Enhancement Mode High Speed Switch TO−220 Full Pack Type Package Features: D 4V Gate Drive D Low Drain−Source On−Resistance D High Forward Transfer Admittance D Low Leakage Current D G Applications: D Switching Regulators D UPS D DC−DC Converters D General Purpose Power Amplifier S Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Drain−Source Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V Drain−Gate Voltage (RGS = 20k), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V Gate−Source Voltage, VGSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Drain Current, ID Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24A Maximum Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62.5C/W Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.77C/W Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Drain−Source Breakdown Voltage Gate Threshold Voltage Symbol Test Conditions V(BR)DSS ID = 10mA, VGS = 0V Min Typ Max Unit 600 − − V VGS(th) ID = 1mA, VDS = 10V 1.5 − 3.5 V Zero Gate Voltage Drain Current IDSS VDS = 600V, VGS = 0V − − 300 A Gate−Source Leakage Current IGSS VGS = 25V, VDS = 0V − − 100 nA RDS(on) ID = 3A, VGS = 10V − 0.95 1.25 Forward Transfer Admittance gfs ID = 3A, VDS = 10V 3 4 − S Input Capacitance Ciss VDS = 10V, VGS = 0V, f = 1MHz − 1400 2000 pF Output Capacitance Coss − 75 120 pF Reverse Transfer Capacitance Crss − 250 380 pF Drain−Source On−State Resistance Rev. 10−13 Electrical Characteristics (Cont’d): (TC = +25C unless otherwise specified) Parameter Turn−On Time Symbol Min Typ Max Unit − 40 80 ns − 25 50 ns td(off) − 85 170 ns tf − 20 40 ns − 56 110 nC td(on) Rise Time VDD = 300V, ID = 3A, VGS = 10V, RL = 100 tr Turn−Off Time Fall Time Test Conditions Total Gate Charge Qg Gate−Source Charge Qgs − 32 − nC Gate−Drain (“Miller”) Charge Qgd − 24 − nC VDD = 400V, VGS = 10V, ID = 6A Source−Drain Diode Ratings and Characteristics: (TA = +25C unless otherwise specified) Continuous Drain Reverse Current IDR − − 6 A Pulse Drain Reverse Current IDRP − − 24 A Diode Forward Voltage VDSF IDR = 6A, VGS = 0V − − −2 V Reverse Recovery Time trr − 460 − ns Reverse Recovered Charge Qrr IDR = 6A, VGS = 0V, dIDR/dt = 100A/s − 3.5 − C .114 (2.9) .181 (4.6) .126 (3.2) Dia Max Max .405 (10.3) Max Isol .252 (6.4) .622 (15.0) Max G D S .118 (3.0) Max .531 (13.5) Min .098 (2.5) .100 (2.54)