INTERSIL ISL8843AUZ

ISL8843
®
Data Sheet
January 3, 2006
Industry Standard Single-Ended Current
Mode PWM Controller
The ISL8843 is an industry standard drop-in replacement for
the popular 28C43 and 18C43 PWM controllers suitable for
a wide range of power conversion applications including
boost, flyback, and isolated output configurations. Its fast
signal propagation and output switching characteristics
make this an ideal product for existing and new designs.
Features include 30V operation, low operating current, 90µA
start-up current, adjustable operating frequency to 2MHz,
and high peak current drive capability with 20ns rise and fall
times.
PART NUMBER
RISING UVLO
MAX. DUTY CYCLE
ISL8843
8.4V
100%
PART
MARKING
Features
• 1A MOSFET gate driver
• 90µA start-up current, 125µA maximum
• 35ns propagation delay current sense to output
• Fast transient response with peak current mode control
• 30V operation
• Adjustable switching frequency to 2MHz
• 20ns rise and fall times with 1nF output load
• Trimmed timing capacitor discharge current for accurate
deadtime/maximum duty cycle control
• 1.5MHz bandwidth error amplifier
• Tight tolerance voltage reference over line, load, and
temperature
• ±3% current limit threshold
Ordering Information
PART
NUMBER
FN9238.1
TEMP.
PKG.
RANGE (°C) PACKAGE DWG. #
ISL8843ABZ
(See Note)
8843 ABZ
-40 to 105
8 Ld SOIC
(Pb-free)
M8.15
ISL8843AUZ
(See Note)
8843Z
-40 to 105
8 Ld MSOP M8.118
(Pb-free)
ISL8843MBZ 8843 MBZ
(See Note)
-55 to 125
8 Ld SOIC
(Pb-free)
ISL8843MUZ 843MZ
(See Note)
-55 to 125
8 Ld MSOP M8.118
(Pb-free)
M8.15
• Pb-free plus anneal available and ELV, WEEE, RoHS
Compliant
Applications
• Telecom and datacom power
• Wireless base station power
• File server power
• Industrial power systems
• PC power supplies
Add -T to part number for Tape and Reel packaging.
• Isolated buck and flyback regulators
NOTE: Intersil Pb-free plus anneal products employ special Pb-free
material sets; molding compounds/die attach materials and 100%
matte tin plate termination finish, which are RoHS compliant and
compatible with both SnPb and Pb-free soldering operations. Intersil
Pb-free products are MSL classified at Pb-free peak reflow
temperatures that meet or exceed the Pb-free requirements of
IPC/JEDEC J STD-020.
• Boost regulators
Pinout
ISL8843
(8 LD SOIC, MSOP)
TOP VIEW
COMP 1
1
8 VREF
FB 2
7 VDD
CS 3
6 OUT
RTCT 4
5 GND
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774 | Intersil (and design) is a registered trademark of Intersil Americas Inc.
Copyright © Intersil Americas Inc. 2005, 2006 All Rights Reserved.
All other trademarks mentioned are the property of their respective owners.
Functional Block Diagram
VREF
5.00 V
VDD
VREF
START/STOP
UV COMPARATOR
ENABLE
VDD OK
+
-
VREF FAULT
-
2
VREF
UV COMPARATOR
4.65V ↓ 4.80V ↑
GND
2.5V
A
+
-
+
+
-
A=0.5
PWM
COMPARATOR
+
-
CS
100mV
5%
FB
VF Total = 1.15V
ERROR
AMPLIFIER
ISL8843
2R
+
-
+
-
1.1V 3%
CLAMP
R
COMP
OUT
S
Q
R
Q
36K
100 nS
FALLING EDGE
DELAY
VREF
100K
2.9V
1.0V
ON
150K
OSCILLATOR
COMPARATOR
< 10nS
-
RTCT
+
8.4mA
FN9238.1
January 3, 2006
ON
CLOCK
RESET
DOMINANT
Typical Application - 48V Input Dual Output Flyback
CR5
+3.3V
C21
T1
+ C16
R21
VIN+
R3
+ C15
+1.8V
C4
CR4
3
C2
C17
CR2
C5
+
C22
+
C20
C19
RETURN
CR6
R1
36-75V
R16
R17
C6
C1
C3
R18
R19
U2
Q1
C14
R4
R22
R15
R27
R20
U4
R26
COMP VREF
CS
FB
V DD
OUT
RTCT
GND
ISL8843
R6
R10
CR1
Q3
C12
VR1
C8
R13
C11
ISL8843
C13
U3
VIN-
FN9238.1
January 3, 2006
ISL8843
Absolute Maximum Ratings
Thermal Information
Supply Voltage, VDD . . . . . . . . . . . . . . . . . . . GND - 0.3V to +30.0V
OUT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . GND - 0.3V to VDD + 0.3V
Signal Pins . . . . . . . . . . . . . . . . . . . . . . . . . . . . GND - 0.3V to 6.0V
Peak GATE Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1A
ESD Classification
Human Body Model (Per JESD22-A114C.01) . . . . . . . . . . .2000V
Machine Model (Per EIA/JESD22-A115-A) . . . . . . . . . . . . . .200V
Charged Device Model (Per JESD22-C191-A) . . . . . . . . . .1000V
Thermal Resistance (Typical, Note 1)
θJA (°C/W)
SOIC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
100
MSOP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . .
130
Maximum Junction Temperature . . . . . . . . . . . . . . . . -55°C to 150°C
Maximum Storage Temperature Range . . . . . . . . . . . -65°C to 150°C
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . . 300°C
(SOIC, MSOP - Lead Tips Only)
Operating Conditions
Temperature Range
ISL8843AxZ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-40°C to 105°C
ISL8843MxZ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-55°C to 125°C
Supply Voltage Range (Typical)
ISL8843 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9V - 30V
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. θJA is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
2. All voltages are with respect to GND.
Electrical Specifications
ISL8843A - Recommended operating conditions unless otherwise noted. Refer to Block Diagram and
Typical Application schematic. VDD = 15V, RT = 10kΩ, CT = 3.3nF, TA = -40 to 105°C (Note 3) Typical values
are at TA = 25°C
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNITS
START Threshold
8.0
8.4
9.0
V
STOP Threshold
7.3
7.6
8.0
V
-
0.8
-
V
UNDERVOLTAGE LOCKOUT
Hysteresis
Startup Current, IDD
VDD < START Threshold
-
90
125
µA
Operating Current, IDD
(Note 4)
-
2.9
4.0
mA
Operating Supply Current, ID
Includes 1nF GATE loading
-
4.75
5.5
mA
4.925
5.000
5.050
V
REFERENCE VOLTAGE
Overall Accuracy
Over line (VDD = 12V to 18V), load,
temperature
Long Term Stability
TA = 125°C, 1000 hours (Note 5)
Current Limit, Sourcing
Current Limit, Sinking
-
5
-
mV
-20
-
-
mA
5
-
-
mA
-1.0
-
1.0
µA
CURRENT SENSE
Input Bias Current
VCS = 1V
CS Offset Voltage
VCS = 0V (Note 5)
95
100
105
mV
COMP to PWM Comparator Offset Voltage
VCS = 0V (Note 5)
0.80
1.15
1.30
V
0.97
1.00
1.03
V
2.5
3.0
3.5
V/V
-
35
55
ns
Input Signal, Maximum
Gain, ACS = ∆VCOMP/∆VCS
0 < VCS < 910mV, VFB = 0V
CS to OUT Delay
ERROR AMPLIFIER
Open Loop Voltage Gain
(Note 5)
60
90
-
dB
Unity Gain Bandwidth
(Note 5)
1.0
1.5
-
MHz
Reference Voltage
VFB = VCOMP
2.475
2.500
2.530
V
4
FN9238.1
January 3, 2006
ISL8843
Electrical Specifications
ISL8843A - Recommended operating conditions unless otherwise noted. Refer to Block Diagram and
Typical Application schematic. VDD = 15V, RT = 10kΩ, CT = 3.3nF, TA = -40 to 105°C (Note 3) Typical values
are at TA = 25°C (Continued)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNITS
FB Input Bias Current
VFB = 0V
-1.0
-0.2
1.0
µA
COMP Sink Current
VCOMP = 1.5V, VFB = 2.7V
1.0
-
-
mA
COMP Source Current
VCOMP = 1.5V, VFB = 2.3V
-0.4
-
-
mA
COMP VOH
VFB = 2.3V
4.80
-
VREF
V
COMP VOL
VFB = 2.7V
0.4
-
1.0
V
PSRR
Frequency = 120Hz, VDD = 12V to
18V (Note 5)
60
80
-
dB
Frequency Accuracy
Initial, TA = 25°C
48
51
53
kHz
Frequency Variation with VDD
TA= 25°C, (F30V - F9V)/F30V
-
0.2
1.0
%
Temperature Stability
(Note 5)
-
-
5
%
Amplitude, Peak to Peak
Static Test
-
1.75
-
V
RTCT Discharge Voltage (Valley Voltage)
Static Test
-
1.0
-
V
Discharge Current
RTCT = 2.0V
6.5
7.8
8.5
mA
OSCILLATOR
OUTPUT
Gate VOH
VDD - OUT, IOUT = -200mA
-
1.0
2.0
V
Gate VOL
OUT - GND, IOUT = 200mA
-
1.0
2.0
V
Peak Output Current
COUT = 1nF (Note 5)
-
1.0
-
A
Rise Time
COUT = 1nF (Note 5)
-
20
40
ns
Fall Time
COUT = 1nF (Note 5)
-
20
40
ns
GATE VOL UVLO Clamp Voltage
VDD = 5V, ILOAD = 1mA
-
-
1.2
V
PWM
Maximum Duty Cycle
COMP = VREF
93.5
95
-
%
Minimum Duty Cycle
COMP = GND
-
-
0
%
NOTES:
3. Specifications at -40°C and 105°C are guaranteed by 25°C test with margin limits.
4. This is the VDD current consumed when the device is active but not switching. Does not include gate drive current.
5. Guaranteed by design, not 100% tested in production.
Electrical Specifications
ISL8843M - Recommended operating conditions unless otherwise noted. Refer to Block Diagram and
Typical Application schematic. VDD = 15V, RT = 10kΩ, CT = 3.3nF, TA = -55 to 125°C (Note 6), Typical values
are at TA = 25°C
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNITS
START Threshold
8.0
8.4
9.0
V
STOP Threshold
7.3
7.6
8.0
V
-
0.8
-
V
UNDERVOLTAGE LOCKOUT
Hysteresis
Startup Current, IDD
VDD < START Threshold
-
90
125
µA
Operating Current, IDD
(Note 7)
-
2.9
4.0
mA
Operating Supply Current, ID
Includes 1nF GATE loading
-
4.75
5.5
mA
4.900
5.000
5.050
V
REFERENCE VOLTAGE
Overall Accuracy
Over line (VDD = 12V to 18V), load,
temperature
5
FN9238.1
January 3, 2006
ISL8843
Electrical Specifications
ISL8843M - Recommended operating conditions unless otherwise noted. Refer to Block Diagram and
Typical Application schematic. VDD = 15V, RT = 10kΩ, CT = 3.3nF, TA = -55 to 125°C (Note 6), Typical values
are at TA = 25°C (Continued)
PARAMETER
Long Term Stability
TEST CONDITIONS
TA = 125°C, 1000 hours (Note 8)
Current Limit, Sourcing
Current Limit, Sinking
MIN
TYP
MAX
UNITS
-
5
-
mV
-20
-
-
mA
5
-
-
mA
CURRENT SENSE
Input Bias Current
VCS = 1V
-1.0
-
1.0
µA
CS Offset Voltage
VCS = 0V (Note 8)
95
100
105
mV
COMP to PWM Comparator Offset Voltage
VCS = 0V (Note 8)
0.80
1.15
1.30
V
0.97
1.00
1.03
V
2.5
3.0
3.5
V/V
-
35
60
ns
Input Signal, Maximum
Gain, ACS = ∆VCOMP/∆VCS
0 < VCS < 910mV, VFB = 0V
CS to OUT Delay
ERROR AMPLIFIER
Open Loop Voltage Gain
(Note 8)
60
90
-
dB
Unity Gain Bandwidth
(Note 8)
1.0
1.5
-
MHz
Reference Voltage
VFB = VCOMP
2.460
2.500
2.535
V
FB Input Bias Current
VFB = 0V
-1.0
-0.2
1.0
µA
COMP Sink Current
VCOMP = 1.5V, VFB = 2.7V
1.0
-
-
mA
COMP Source Current
VCOMP = 1.5V, VFB = 2.3V
-0.4
-
-
mA
COMP VOH
VFB = 2.3V
4.80
-
VREF
V
COMP VOL
VFB = 2.7V
0.4
-
1.0
V
PSRR
Frequency = 120Hz, VDD = 12V to
18V (Note 8)
60
80
-
dB
OSCILLATOR
Frequency Accuracy
Initial, TA = 25°C
48
51
53
kHz
Frequency Variation with VDD
TA = 25°C, (F30V - F9V)/F30V
-
0.2
1.0
%
Temperature Stability
(Note 8)
-
-
5
%
Amplitude, Peak to Peak
Static Test
-
1.75
-
V
RTCT Discharge Voltage (Valley Voltage)
Static Test
-
1.0
-
V
Discharge Current
RTCT = 2.0V
6.2
8.0
8.5
mA
OUTPUT
Gate VOH
VDD - OUT, IOUT = -200mA
-
1.0
2.0
V
Gate VOL
OUT - GND, IOUT = 200mA
-
1.0
2.0
V
Peak Output Current
COUT = 1nF (Note 8)
-
1.0
-
A
Rise Time
COUT = 1nF (Note 8)
-
20
40
ns
Fall Time
COUT = 1nF (Note 8)
-
20
40
ns
GATE VOL UVLO Clamp Voltage
VDD = 5V, ILOAD = 1mA
-
-
1.2
V
PWM
Maximum Duty Cycle
COMP = VREF
93.5
95
-
%
Minimum Duty Cycle
COMP = GND
-
-
0
%
NOTES:
6. Specifications at -55°C and 125°C are guaranteed by 25°C test with margin limits.
7. This is the VDD current consumed when the device is active but not switching. Does not include gate drive current.
8. Guaranteed by design, not 100% tested in production.
6
FN9238.1
January 3, 2006
ISL8843
1.001
1.01
1.000
NORMALIZED VREF
NORMALIZED FREQUENCY
Typical Performance Curves
1
0.99
0.999
0.998
0.997
0.996
0.98
-60 -40 -20
0
20
40
60
80
0.995
-60 -40 -20
100 120 140
0
20
40
60
80 100 120 140
TEMPERATURE (°C)
TEMPERATURE (°C)
FIGURE 1. FREQUENCY vs TEMPERATURE
FIGURE 2. REFERENCE VOLTAGE vs TEMPERATURE
1.001
FREQUENCY (kHz)
NORMALIZED EA REFERENCE
1•103
1.000
0.998
220pF
330pF
470pF
1.0nF
10
2.2nF
3.3nF
4.7nF
6.8nF
0.996
-60 -40 -20
0
20
40
60
80 100 120 140
FIGURE 3. EA REFERENCE vs TEMPERATURE
RTCT - This is the oscillator timing control pin. The
operational frequency and maximum duty cycle are set by
connecting a resistor, RT, between VREF and this pin and a
timing capacitor, CT, from this pin to GND. The oscillator
produces a sawtooth waveform with a programmable
frequency range up to 2.0MHz. The charge time, TC, the
discharge time, TD, the switching frequency, f, and the
maximum duty cycle, Dmax, can be approximated from the
following equations:
C
≈ 0.533 • RT • CT
(EQ. 1)
D
0.008 • RT – 3.83
≈ – RT • CT • ln  ----------------------------------------------
 0.008 • RT – 1.71
(EQ. 2)
f = 1 ⁄ (TC + TD)
(EQ. 3)
D = TC • f
(EQ. 4)
7
1
1
10
RT (kΩ)
100
FIGURE 4. RTCT vs FREQUENCY
Pin Descriptions
T
100
0.997
TEMPERATURE (°C)
T
CT =
100pF
The formulae have increased error at higher frequencies due
to propagation delays. Figure 4 may be used as a guideline
in selecting the capacitor and resistor values required for a
given frequency.
COMP - COMP is the output of the error amplifier and the
input of the PWM comparator. The control loop frequency
compensation network is connected between the COMP and
FB pins.
FB - The output voltage feedback is connected to the
inverting input of the error amplifier through this pin. The
non-inverting input of the error amplifier is internally tied to a
reference voltage.
CS - This is the current sense input to the PWM comparator.
The range of the input signal is nominally 0 to 1.0V and has
an internal offset of 100mV.
GND - GND is the power and small signal reference ground
for all functions.
FN9238.1
January 3, 2006
ISL8843
OUT - This is the drive output to the power switching device.
It is a high current output capable of driving the gate of a
power MOSFET with peak currents of 1.0A. This GATE
output is actively held low when VDD is below the UVLO
threshold.
VDD - VDD is the power connection for the device. The total
supply current will depend on the load applied to OUT. Total
IDD current is the sum of the operating current and the
average output current. Knowing the operating frequency, f,
and the MOSFET gate charge, Qg, the average output
current can be calculated from:
I OUT = Qg × f
(EQ. 5)
To optimize noise immunity, bypass VDD to GND with a
ceramic capacitor as close to the VDD and GND pins as
possible.
VREF - The 5.00V reference voltage output. +1.0/-1.5%
tolerance over line, load and operating temperature. Bypass
to GND with a 0.1µF to 3.3µF capacitor to filter this output as
needed.
Functional Description
Features
The ISL8843 current mode PWM makes an ideal choice for
low-cost flyback and forward topology applications. With its
greatly improved performance over industry standard parts,
it is the obvious choice for new designs or existing designs
which require updating.
Oscillator
The ISL8843 has a sawtooth oscillator with a programmable
frequency range to 2MHz, which can be programmed with a
resistor from VREF and a capacitor to GND on the RTCT
pin. (Please refer to Figure 4 for the resistor and capacitance
required for a given frequency.)
Soft-Start Operation
Soft-start must be implemented externally. One method,
illustrated below, clamps the voltage on COMP.
VREF
R1
COMP
ISL8843
D1
Q1
GND
C1
The COMP pin is clamped to the voltage on capacitor C1
plus a base-emitter junction by transistor Q1. C1 is charged
from VREF through resistor R1 and the base current of Q1.
At power-up C1 is fully discharged, COMP is at ~0.7V, and
the duty cycle is zero. As C1 charges, the voltage on COMP
increases, and the duty cycle increases in proportion to the
voltage on C1. When COMP reaches the steady state
operating point, the control loop takes over and soft start is
complete. C1 continues to charge up to VREF and no longer
affects COMP. During power down, diode D1 quickly
discharges C1 so that the soft start circuit is properly
initialized prior to the next power on sequence.
Gate Drive
The ISL8843 is capable of sourcing and sinking 1A peak
current. To limit the peak current through the IC, an optional
external resistor may be placed between the totem-pole
output of the IC (OUT pin) and the gate of the MOSFET. This
small series resistor also damps any oscillations caused by
the resonant tank of the parasitic inductances in the traces of
the board and the FET’s input capacitance.
Slope Compensation
For applications where the maximum duty cycle is less than
50%, slope compensation may be used to improve noise
immunity, particularly at lighter loads. The amount of slope
compensation required for noise immunity is determined
empirically, but is generally about 10% of the full scale
current feedback signal. For applications where the duty
cycle is greater than 50%, slope compensation is required to
prevent instability.
Slope compensation may be accomplished by summing an
external ramp with the current feedback signal or by
subtracting the external ramp from the voltage feedback
error signal. Adding the external ramp to the current
feedback signal is the more popular method.
From the small signal current-mode model [1] it can be
shown that the naturally-sampled modulator gain, Fm,
without slope compensation, is
1
Fm = -------------------SnTsw
where Sn is the slope of the sawtooth signal and Tsw is the
duration of the half-cycle. When an external ramp is added,
the modulator gain becomes
1
1
Fm = --------------------------------------- = ---------------------------( Sn + Se )Tsw
m c SnTsw
8
(EQ. 7)
where Se is slope of the external ramp and
Se
m c = 1 + ------Sn
FIGURE 5. SOFT-START
(EQ. 6)
(EQ. 8)
The criteria for determining the correct amount of external
ramp can be determined by appropriately setting the
damping factor of the double-pole located at the switching
FN9238.1
January 3, 2006
ISL8843
frequency. The double-pole will be critically damped if the
Q-factor is set to 1, over-damped for Q < 1, and underdamped for Q > 1. An under-damped condition may result in
current loop instability.
1
Q = ------------------------------------------------π ( m c ( 1 – D ) – 0.5 )
(EQ. 9)
Substituting Equations 12 and 13 into Equation 14 and
solving for RCS yields
1
R CS = --------------------------------------------------------------------------------------------------------------------------------------------------------1
- + 0.5  N
D ⋅ T sw ⋅ V IN  -( 1 – D ) ⋅ V O ⋅ T sw

π
--------------------------------- ⋅  ------------------ – 1 + ------s- ⋅  I O + ---------------------------------------------

 N 
Lp
1–D
2L s

p


(EQ. 15)
where D is the percent of on time during a switching cycle.
Setting Q = 1 and solving for Se yields
1
1
S e = S n   --- + 0.5 ------------- – 1
1 –D
π

(EQ. 10)
Since Sn and Se are the on time slopes of the current ramp
and the external ramp, respectively, they can be multiplied
by Ton to obtain the voltage change that occurs during Ton.
1
+ 0.5 ------------- – 1
Ve = Vn   1
1 –D
  --π
Adding slope compensation is accomplished in the ISL8843
using an external buffer transistor and the RTCT signal. A
typical application sums the buffered RTCT signal with the
current sense feedback and applies the result to the CS pin
as shown in Figure 6.
(EQ. 11)
VREF
For a flyback converter, Vn can be solved for in terms of
input voltage, current transducer components, and primary
inductance, yielding
D ⋅ T SW ⋅ V IN ⋅ R CS 1
1
V e = ----------------------------------------------------   --- + 0.5 ------------- – 1
1 –D
π

Lp
R9
CS
R6
ISL8843
where Vn is the change in the current feedback signal (∆I)
during the on time and Ve is the voltage that must be added
by the external ramp.
RTCT
C4
V
(EQ. 12)
FIGURE 6. SLOPE COMPENSATION
where RCS is the current sense resistor, TSW is the
switching frequency, Lp is the primary inductance, VIN is the
minimum input voltage, and D is the maximum duty cycle.
The current sense signal at the end of the ON time for CCM
operation is:
( 1 – D ) ⋅ VO ⋅ T 
N S ⋅ R CS 
sw
V CS = ------------------------  I O + ---------------------------------------------
NP
2L s


V
⋅ R6
V e = 2.05D
----------------------------R6 + R9
V
Since the peak current limit threshold is 1.00V, the total
current feedback signal plus the external ramp voltage must
sum to this value when the output load is at the current limit
threshold.
(EQ. 14)
The factor of 2.05 in Equation 16 arises from the peak
amplitude of the sawtooth waveform on RTCT minus a baseemitter junction drop. That voltage multiplied by the
maximum duty cycle is the voltage source for the slope
compensation. Rearranging to solve for R9 yields:
( 2.05D – V e ) ⋅ R6
R9 = ---------------------------------------------Ve
Ω
(EQ. 17)
The value of RCS determined in Equation 15 must be
rescaled so that the current sense signal presented at the
CS pin is that predicted by Equation 13. The divider created
by R6 and R9 makes this necessary.
R6 + R9
R′ CS = ---------------------- ⋅ R CS
R9
9
(EQ. 16)
(EQ. 13)
where VCS is the voltage across the current sense resistor,
Ls is the secondary winding inductance, and IO is the output
current at current limit. Equation 13 assumes the voltage
drop across the output rectifier is negligible.
V e + V CS = 1
Assuming the designer has selected values for the RC filter
(R6 and C4) placed on the CS pin, the value of R9 required
to add the appropriate external ramp can be found by
superposition.
(EQ. 18)
FN9238.1
January 3, 2006
ISL8843
Example:
VIN = 12V
VO = 48V
Ls = 800µH
Ns/Np = 10
Lp = 8.0µH
IO = 200mA
Switching Frequency, Fsw = 200kHz
Duty Cycle, D = 28.6%
R6 = 499Ω
Solve for the current sense resistor, RCS, using Equation 15.
RCS = 295mΩ
Determine the amount of voltage, Ve, that must be added to
the current feedback signal using Equation 12.
Ve = 92.4mV
Using Equation 17, solve for the summing resistor, R9, from
CT to CS.
R9 = 2.67kΩ
Determine the new value of RCS, R’CS, using Equation 18.
R’CS = 350mΩ
Additional slope compensation may be considered for
design margin. The above discussion determines the
minimum external ramp that is required. The buffer transistor
used to create the external ramp from RTCT should have a
sufficiently high gain (>200) so as to minimize the required
base current. Whatever base current is required reduces the
charging current into RTCT and will reduce the oscillator
frequency.
Fault Conditions
A Fault condition occurs if VREF falls below 4.65V. When a
Fault is detected OUT is disabled. When VREF exceeds
4.80V, the Fault condition clears, and OUT is enabled.
Ground Plane Requirements
Careful layout is essential for satisfactory operation of the
device. A good ground plane must be employed. A unique
section of the ground plane must be designated for high di/dt
currents associated with the output stage. VDD should be
bypassed directly to GND with good high frequency
capacitors.
References
[1] Ridley, R., “A New Continuous-Time Model for Current
Mode Control”, IEEE Transactions on Power
Electronics, Vol. 6, No. 2, April 1991.
10
FN9238.1
January 3, 2006
ISL8843
Small Outline Plastic Packages (SOIC)
M8.15 (JEDEC MS-012-AA ISSUE C)
N
INDEX
AREA
8 LEAD NARROW BODY SMALL OUTLINE PLASTIC PACKAGE
H
0.25(0.010) M
B M
INCHES
E
SYMBOL
-B1
2
A
3
L
SEATING PLANE
-A-
A
D
h x 45°
-C-
e
A1
B
0.25(0.010) M
C
0.10(0.004)
C A M
B S
MIN
MAX
MIN
MAX
NOTES
0.0532
0.0688
1.35
1.75
-
A1
0.0040
0.0098
0.10
0.25
-
B
0.013
0.020
0.33
0.51
9
C
0.0075
0.0098
0.19
0.25
-
D
0.1890
0.1968
4.80
5.00
3
E
0.1497
0.1574
3.80
4.00
4
e
α
0.050 BSC
-
0.2284
0.2440
5.80
6.20
-
h
0.0099
0.0196
0.25
0.50
5
L
0.016
0.050
0.40
α
1. Symbols are defined in the “MO Series Symbol List” in Section 2.2 of
Publication Number 95.
1.27 BSC
H
N
NOTES:
MILLIMETERS
8
0°
1.27
8
8°
0°
6
7
8°
Rev. 1 6/05
2. Dimensioning and tolerancing per ANSI Y14.5M-1982.
3. Dimension “D” does not include mold flash, protrusions or gate burrs.
Mold flash, protrusion and gate burrs shall not exceed 0.15mm (0.006
inch) per side.
4. Dimension “E” does not include interlead flash or protrusions. Interlead flash and protrusions shall not exceed 0.25mm (0.010 inch) per
side.
5. The chamfer on the body is optional. If it is not present, a visual index
feature must be located within the crosshatched area.
6. “L” is the length of terminal for soldering to a substrate.
7. “N” is the number of terminal positions.
8. Terminal numbers are shown for reference only.
9. The lead width “B”, as measured 0.36mm (0.014 inch) or greater
above the seating plane, shall not exceed a maximum value of
0.61mm (0.024 inch).
10. Controlling dimension: MILLIMETER. Converted inch dimensions
are not necessarily exact.
11
FN9238.1
January 3, 2006
ISL8843
Mini Small Outline Plastic Packages (MSOP)
N
M8.118 (JEDEC MO-187AA)
8 LEAD MINI SMALL OUTLINE PLASTIC PACKAGE
E1
INCHES
E
-B-
INDEX
AREA
1 2
0.20 (0.008)
A B C
TOP VIEW
4X θ
0.25
(0.010)
R1
R
GAUGE
PLANE
SEATING
PLANE -CA
4X θ
A2
A1
b
-H-
0.10 (0.004)
L1
SEATING
PLANE
C
D
0.20 (0.008)
C
a
CL
E1
0.20 (0.008)
C D
MAX
MIN
MAX
NOTES
0.037
0.043
0.94
1.10
-
A1
0.002
0.006
0.05
0.15
-
A2
0.030
0.037
0.75
0.95
-
b
0.010
0.014
0.25
0.36
9
c
0.004
0.008
0.09
0.20
-
D
0.116
0.120
2.95
3.05
3
E1
0.116
0.120
2.95
3.05
4
0.026 BSC
0.65 BSC
-
E
0.187
0.199
4.75
5.05
-
L
0.016
0.028
0.40
0.70
6
0.037 REF
N
C
SIDE VIEW
MIN
A
L1
-A-
e
SYMBOL
e
L
MILLIMETERS
0.95 REF
8
R
0.003
R1
0
α
-
8
7
-
-
0.07
-
-
5o
15o
-
0o
6o
-
0.07
0.003
-
5o
15o
0o
6o
-B-
Rev. 2 01/03
END VIEW
NOTES:
1. These package dimensions are within allowable dimensions of
JEDEC MO-187BA.
2. Dimensioning and tolerancing per ANSI Y14.5M-1994.
3. Dimension “D” does not include mold flash, protrusions or gate
burrs and are measured at Datum Plane. Mold flash, protrusion
and gate burrs shall not exceed 0.15mm (0.006 inch) per side.
4. Dimension “E1” does not include interlead flash or protrusions
and are measured at Datum Plane. - H - Interlead flash and
protrusions shall not exceed 0.15mm (0.006 inch) per side.
5. Formed leads shall be planar with respect to one another within
0.10mm (0.004) at seating Plane.
6. “L” is the length of terminal for soldering to a substrate.
7. “N” is the number of terminal positions.
8. Terminal numbers are shown for reference only.
9. Dimension “b” does not include dambar protrusion. Allowable
dambar protrusion shall be 0.08mm (0.003 inch) total in excess
of “b” dimension at maximum material condition. Minimum space
between protrusion and adjacent lead is 0.07mm (0.0027 inch).
10. Datums -A -H- .
and - B - to be determined at Datum plane
11. Controlling dimension: MILLIMETER. Converted inch dimensions are for reference only.
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12
FN9238.1
January 3, 2006