INTERSIL HGT1S3N60A4DS

HGT1S3N60A4DS, HGTP3N60A4D
Data Sheet
January 2000
600V, SMPS Series N-Channel IGBT with
Anti-Parallel Hyperfast Diode
The HGT1S3N60A4DS and the HGTP3N60A4D are MOS
gated high voltage switching devices combining the best
features of MOSFETs and bipolar transistors. These devices
have the high input impedance of a MOSFET and the low
on-state conduction loss of a bipolar transistor. The much
lower on-state voltage drop varies only moderately between
25oC and 150oC. The IGBT used is the development type
TA49327. The diode used in anti-parallel is the development
type TA49369.
This IGBT is ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential. This device has been
optimized for high frequency switch mode power
supplies.
File Number
4818
Features
• >100kHz Operation At 390V, 3A
• 200kHz Operation At 390V, 2.5A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . . 70ns at TJ = 125oC
• Low Conduction Loss
• Temperature Compensating SABER™ Model
www.intersil.com
Packaging
JEDEC TO-263AB
COLLECTOR
(FLANGE)
G
Formerly Developmental Type TA49329.
E
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGT1S3N60A4DS
TO-263AB
3N60A4D
HGTP3N60A4D
TO-220AB
3N60A4D
JEDEC TO-220AB
E
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB in tape and reel, i.e., HGT1S3N60A4DS9A.
C
G
Symbol
COLLECTOR
(FLANGE)
C
G
E
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
1
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
4,587,713
4,644,637
4,801,986
4,883,767
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000
SABER™ is a trademark of Analogy, Inc.
HGT1S3N60A4DS, HGTP3N60A4D
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified
Collector to Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES
Collector Current Continuous
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IC25
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IC110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
Gate to Emitter Voltage Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM
Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range. . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TPKG
HGT1S3N60A4DS
HGTP3N60A4D
UNITS
600
V
17
8
40
±20
±30
15A at 600V
70
0.58
-55 to 150
A
A
A
V
V
W
W/oC
oC
300
260
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
TJ = 25oC, Unless Otherwise Specified
Electrical Specifications
PARAMETER
SYMBOL
Collector to Emitter Breakdown Voltage
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
Gate to Emitter Threshold Voltage
BVCES
ICES
VCE(SAT)
VGE(TH)
TEST CONDITIONS
MIN
TYP
MAX
UNITS
600
-
-
V
-
-
250
µA
-
-
3.0
mA
-
2.0
2.7
V
-
1.6
2.2
V
4.5
6.1
7.0
V
-
-
±250
nA
15
-
-
A
-
8.8
-
V
VGE = 15V
-
21
25
nC
VGE = 20V
-
26
32
nC
-
6
-
ns
-
11
-
ns
-
73
-
ns
-
47
-
ns
-
37
-
µJ
IC = 250µA, VGE = 0V
VCE = 600V
IC = 3A,
VGE = 15V
TJ = 25oC
TJ = 125oC
TJ = 25oC
TJ = 125oC
IC = 250µA, VCE = 600V
IGES
VGE = ±20V
Switching SOA
SSOA
TJ = 150oC, RG = 50Ω, VGE = 15V,
L = 200µH, VCE = 600V
Gate to Emitter Plateau Voltage
VGEP
IC = 3A, VCE = 300V
Gate to Emitter Leakage Current
On-State Gate Charge
Qg(ON)
Current Turn-On Delay Time
td(ON)I
Current Rise Time
trI
Current Turn-Off Delay Time
td(OFF)I
Current Fall Time
tfI
IC = 3A,
VCE = 300V
IGBT and Diode at TJ = 25oC,
ICE = 3A,
VCE = 390V,
VGE = 15V,
RG = 50Ω,
L = 1mH,
Test Circuit (Figure 24)
Turn-On Energy (Note 2)
EON1
Turn-On Energy (Note 2)
EON2
-
55
70
µJ
Turn-Off Energy (Note 3)
EOFF
-
25
35
µJ
2
HGT1S3N60A4DS, HGTP3N60A4D
TJ = 25oC, Unless Otherwise Specified (Continued)
Electrical Specifications
PARAMETER
SYMBOL
Current Turn-On Delay Time
td(ON)I
Current Rise Time
trI
Current Turn-Off Delay Time
td(OFF)I
Current Fall Time
tfI
TEST CONDITIONS
IGBT and Diode at TJ = 125oC,
ICE = 3A,
VCE = 390V, VGE = 15V,
RG = 50Ω,
L = 1mH,
Test Circuit (Figure 24)
MIN
TYP
MAX
UNITS
-
5.5
8
ns
-
12
15
ns
-
110
165
ns
-
70
100
ns
Turn-On Energy (Note 2)
EON1
-
37
-
µJ
Turn-On Energy (Note 2)
EON2
-
90
100
µJ
Turn-Off Energy (Note 3)
EOFF
-
50
80
µJ
Diode Forward Voltage
VEC
IEC = 3A
-
2.25
-
V
IEC = 3A, dIEC/dt = 200A/µs
-
29
-
ns
IEC = 1A, dIEC/dt = 200A/µs
-
19
-
ns
IGBT
-
-
1.8
oC/W
Diode
-
-
3.5
oC/W
Diode Reverse Recovery Time
trr
Thermal Resistance Junction To Case
RθJC
NOTES:
2. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in
Figure 24.
3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for
Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Unless Otherwise Specified
ICE , DC COLLECTOR CURRENT (A)
20
VGE = 15V
16
12
8
4
0
25
50
75
100
125
TC , CASE TEMPERATURE (oC)
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
3
150
ICE, COLLECTOR TO EMITTER CURRENT (A)
Typical Performance Curves
20
TJ = 150oC, RG = 50Ω, VGE = 15V, L = 200µH
16
12
8
4
0
0
100
200
300
400
500
600
700
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
HGT1S3N60A4DS, HGTP3N60A4D
fMAX, OPERATING FREQUENCY (kHz)
600
TC
VGE
75oC
15V
300
200
fMAX1 = 0.05 / (td(OFF)I + td(ON)I)
fMAX2 = (PD - PC) / (EON2 + EOFF)
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
RØJC = 1.8oC/W, SEE NOTES
100
50
TJ = 125oC, RG = 50Ω, L = 1mH, V CE = 390V
2
1
3
4
5
6
20
18
56
tSC
16
48
14
12
32
10
24
8
16
6
8
4
10
11
8
TJ = 25oC
0
1
2
3
4
5
ICE, COLLECTOR TO EMITTER CURRENT (A)
ICE, COLLECTOR TO EMITTER CURRENT (A)
TJ = 150oC
TJ = 125oC
12
0
20
DUTY CYCLE < 0.5%, VGE = 15V
PULSE DURATION = 250µs
16
TJ = 125oC
TJ = 150oC
12
8
4
0
TJ = 25oC
0
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
EOFF, TURN-OFF ENERGY LOSS (µJ)
EON2 , TURN-ON ENERGY LOSS (µJ)
TJ = 125oC, VGE = 12V, VGE = 15V
120
80
0
TJ = 25oC, VGE = 12V, VGE = 15V
1
2
3
4
5
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
4
3
4
140
200
40
2
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
RG = 50Ω, L = 1mH, VCE = 390V
160
1
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
240
0
15
14
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
DUTY CYCLE < 0.5%, VGE = 12V
PULSE DURATION = 250µs
4
13
12
VGE , GATE TO EMITTER VOLTAGE (V)
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
16
40
ISC
ICE, COLLECTOR TO EMITTER CURRENT (A)
20
64
VCE = 390V, RG = 50Ω, TJ = 125oC
ISC, PEAK SHORT CIRCUIT CURRENT (A)
Unless Otherwise Specified (Continued)
tSC , SHORT CIRCUIT WITHSTAND TIME (µs)
Typical Performance Curves
6
RG = 50Ω, L = 1mH, VCE = 390V
120
100
80
TJ = 125oC, VGE = 12V OR 15V
60
40
20
0
TJ = 25oC, VGE = 12V OR 15V
1
2
3
4
5
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
6
HGT1S3N60A4DS, HGTP3N60A4D
Typical Performance Curves
Unless Otherwise Specified (Continued)
32
RG = 50Ω, L = 1mH, VCE = 390V
RG = 50Ω, L = 1mH, VCE = 390V
28
12
trI , RISE TIME (ns)
td(ON)I, TURN-ON DELAY TIME (ns)
16
TJ = 25oC, TJ = 125oC, VGE = 12V
8
TJ = 25oC, TJ = 125oC, VGE = 15V
4
TJ = 25oC OR TJ = 125oC, VGE = 12V
24
20
16
12
TJ = 25oC OR TJ = 125oC, VGE = 15V
8
0
1
2
3
4
5
4
6
1
ICE , COLLECTOR TO EMITTER CURRENT (A)
4
5
6
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
112
96
RG = 50Ω, L = 1mH, VCE = 390V
VGE = 15V, TJ = 125oC
104
88
VGE = 12V, TJ = 125oC
96
TJ = 125oC, VGE = 12V OR 15V
tfI , FALL TIME (ns)
td(OFF)I , TURN-OFF DELAY TIME (ns)
3
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
88
VGE = 15V, TJ = 25oC
80
72
VGE = 12V, TJ = 25oC
64
80
72
64
56
TJ = 25oC, VGE = 12V OR 15V
48
56
RG = 50Ω, L = 1mH, VCE = 390V
48
1
2
3
4
5
40
6
1
ICE , COLLECTOR TO EMITTER CURRENT (A)
16
VGE, GATE TO EMITTER VOLTAGE (V)
DUTY CYCLE < 0.5%, VCE = 10V
PULSE DURATION = 250µs
16
12
TJ = 25oC
4
0
TJ = -55oC
TJ = 125oC
4
6
8
10
12
VGE, GATE TO EMITTER VOLTAGE (V)
FIGURE 13. TRANSFER CHARACTERISTIC
5
3
4
5
6
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
20
8
2
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
ICE, COLLECTOR TO EMITTER CURRENT (A)
2
14
IG(REF) = 1mA, RL = 100Ω, TJ = 25oC
14
VCE = 600V
12
10
8
VCE = 400V
VCE = 200V
6
4
2
0
0
4
8
12
16
20
QG , GATE CHARGE (nC)
FIGURE 14. GATE CHARGE WAVEFORMS
24
28
HGT1S3N60A4DS, HGTP3N60A4D
250
Unless Otherwise Specified (Continued)
RG = 50Ω, L = 1mH, VCE = 390V, VGE = 15V
ETOTAL = EON2 + EOFF
200
ICE = 4.5A
150
ICE = 3A
100
ICE = 1.5A
50
0
25
50
75
100
125
150
ETOTAL, TOTAL SWITCHING ENERGY LOSS (µJ)
ETOTAL, TOTAL SWITCHING ENERGY LOSS (µJ)
Typical Performance Curves
1000
TJ = 125oC, L = 1mH, VCE = 390V, VGE = 15V
ETOTAL = EON2 + EOFF
ICE = 4.5A
ICE = 3A
100
ICE = 1.5A
30
3
10
100
TC , CASE TEMPERATURE (oC)
FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE
700
FREQUENCY = 1MHz
C, CAPACITANCE (pF)
600
500
400
CIES
300
CRES
200
0
COES
0
20
40
60
80
100
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 15. TOTAL SWITCHING LOSS vs CASE
TEMPERATURE
100
2.7
DUTY CYCLE < 0.5%, TJ = 25oC
PULSE DURATION = 250µs
2.6
2.5
2.4
ICE = 4.5A
2.3
ICE = 3A
2.2
2.1
2.0
ICE = 1.5A
8
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
12
14
16
FIGURE 18. COLLECTOR TO EMITTER ON-STATE VOLTAGE
vs GATE TO EMITTER VOLTAGE
64
20
DUTY CYCLE < 0.5%,
PULSE DURATION = 250µs
dIEC/dt = 200A/µs
16
12
8
25oC
125oC
4
48
125oC tb
40
25oC trr
32
125oC ta
24
16
25oC ta
8
0
1
2
3
4
VEC , FORWARD VOLTAGE (V)
FIGURE 19. DIODE FORWARD CURRENT vs FORWARD
VOLTAGE DROP
6
125oC trr
56
trr, RECOVERY TIMES (ns)
IEC , FORWARD CURRENT (A)
10
VGE, GATE TO EMITTER VOLTAGE (V)
FIGURE 17. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
0
1000
RG, GATE RESISTANCE (Ω)
5
0
1
2
25oC tb
3
4
5
IEC , FORWARD CURRENT (A)
FIGURE 20. RECOVERY TIMES vs FORWARD CURRENT
6
HGT1S3N60A4DS, HGTP3N60A4D
trr, RECOVERY TIMES (ns)
26
Unless Otherwise Specified (Continued)
IEC = 3A, VCE = 390V
125oC ta
22
18
125oC tb
25oC ta
14
10
25oC tb
6
200
600
400
1000
800
Qrr, REVERSE RECOVERY CHARGE (nc)
Typical Performance Curves
200
VCE = 390V
160
125oC, IEC = 3A
120
125oC, IEC = 1.5A
25oC, IEC = 20A
80
25oC, IEC = 10A
40
0
200
diEC/dt, RATE OF CHANGE OF CURRENT (A/µs)
FIGURE 21. RECOVERY TIMES vs RATE OF CHANGE OF
CURRENT
ZθJC , NORMALIZED THERMAL RESPONSE
400
600
800
1000
diEC/dt, RATE OF CHANGE OF CURRENT (A/µs)
FIGURE 22. STORED CHARGE vs RATE OF CHANGE OF
CURRENT
100
0.5
0.2
0.1
10-1
t1
0.05
PD
0.02
0.01
10-2
t2
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
SINGLE PULSE
10-5
10-4
10-3
10-2
10-1
100
t1 , RECTANGULAR PULSE DURATION (s)
FIGURE 23. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
Test Circuit and Waveforms
HGTP3N60A4D
DIODE TA49369
VGE
90%
10%
E0N2
EOFF
L = 1mH
ICE
RG = 50Ω
ICE
90%
DUT
VCE
+
-
10%
VDD = 390V
tfI
td(ON)I
trI
td(OFF)I
FIGURE 24. INDUCTIVE SWITCHING TEST CIRCUIT
7
FIGURE 25. SWITCHING TEST WAVEFORMS
HGT1S3N60A4DS, HGTP3N60A4D
Handling Precautions for IGBTs
Operating Frequency Information
Insulated Gate Bipolar Transistors are susceptible to
gate-insulation damage by the electrostatic discharge of
energy through the devices. When handling these devices,
care should be exercised to assure that the static charge
built in the handler’s body capacitance is not discharged
through the device. With proper handling and application
procedures, however, IGBTs are currently being extensively
used in production by numerous equipment manufacturers in
military, industrial and consumer applications, with virtually
no damage problems due to electrostatic discharge. IGBTs
can be handled safely if the following basic precautions are
taken:
Operating frequency information for a typical device
(Figure 3) is presented as a guide for estimating device
performance for a specific application. Other typical
frequency vs collector current (ICE) plots are possible using
the information shown for a typical unit in Figures 6, 7, 8, 9
and 11. The operating frequency plot (Figure 3) of a typical
device shows fMAX1 or fMAX2; whichever is smaller at each
point. The information is based on measurements of a
typical device and is bounded by the maximum rated
junction temperature.
1. Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as “ECCOSORBD™ LD26” or equivalent.
2. When devices are removed by hand from their carriers,
the hand being used should be grounded by any suitable
means - for example, with a metallic wristband.
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed from
circuits with power on.
5. Gate Voltage Rating - Never exceed the gate-voltage
rating of VGEM. Exceeding the rated VGE can result in
permanent damage to the oxide layer in the gate region.
6. Gate Termination - The gates of these devices are
essentially capacitors. Circuits that leave the gate
open-circuited or floating should be avoided. These
conditions can result in turn-on of the device due to
voltage buildup on the input capacitor due to leakage
currents or pickup.
7. Gate Protection - These devices do not have an internal
monolithic Zener diode from gate to emitter. If gate
protection is required an external Zener is recommended.
8
fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I).
Deadtime (the denominator) has been arbitrarily held to 10%
of the on-state time for a 50% duty factor. Other definitions
are possible. td(OFF)I and td(ON)I are defined in Figure 25.
Device turn-off delay can establish an additional frequency
limiting condition for an application other than TJM . td(OFF)I
is important when controlling output ripple under a lightly
loaded condition.
fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON2). The
allowable dissipation (PD) is defined by PD = (TJM - TC)/RθJC.
The sum of device switching and conduction losses must not
exceed PD. A 50% duty factor was used (Figure 3) and the
conduction losses (PC) are approximated by:
PC = (VCE x ICE)/2.
EON2 and EOFF are defined in the switching waveforms
shown in Figure 25. EON2 is the integral of the
instantaneous power loss (ICE x VCE) during turn-on and
EOFF is the integral of the instantaneous power loss
(ICE x VCE) during turn-off. All tail losses are included in the
calculation for EOFF; i.e., the collector current equals zero
(ICE = 0).
ECCOSORBD™ is a trademark of Emerson and Cumming, Inc.
HGT1S3N60A4DS, HGTP3N60A4D
TO-263AB
SURFACE MOUNT JEDEC TO-263AB PLASTIC PACKAGE
E
A
A1
H1
TERM. 4
D
L2
L1
L
1
3
b
b1
e
c
J1
e1
0.450
(11.43)
TERM. 4
L3
0.350
(8.89)
b2
0.700
(17.78)
3
0.150
(3.81)
1
0.080 TYP (2.03)
0.062 TYP (1.58)
MINIMUM PAD SIZE RECOMMENDED FOR
SURFACE-MOUNTED APPLICATIONS
1.5mm
DIA. HOLE
INCHES
MILLIMETERS
SYMBOL
MIN
MAX
MIN
MAX
NOTES
A
0.170
0.180
4.32
4.57
A1
0.048
0.052
1.22
1.32
4, 5
b
0.030
0.034
0.77
0.86
4, 5
b1
0.045
0.055
1.15
1.39
4, 5
b2
0.310
7.88
2
c
0.018
0.022
0.46
0.55
4, 5
D
0.405
0.425
10.29
10.79
E
0.395
0.405
10.04
10.28
e
0.100 TYP
2.54 TYP
7
e1
0.200 BSC
5.08 BSC
7
H1
0.045
0.055
1.15
1.39
J1
0.095
0.105
2.42
2.66
L
0.175
0.195
4.45
4.95
L1
0.090
0.110
2.29
2.79
4, 6
L2
0.050
0.070
1.27
1.77
3
L3
0.315
8.01
2
NOTES:
1. These dimensions are within allowable dimensions of Rev. C of
JEDEC TO-263AB outline dated 2-92.
2. L3 and b2 dimensions established a minimum mounting surface
for terminal 4.
3. Solder finish uncontrolled in this area.
4. Dimension (without solder).
5. Add typically 0.002 inches (0.05mm) for solder plating.
6. L1 is the terminal length for soldering.
7. Position of lead to be measured 0.120 inches (3.05mm) from bottom
of dimension D.
8. Controlling dimension: Inch.
9. Revision 11 dated 5-99.
4.0mm
USER DIRECTION OF FEED
2.0mm
TO-263AB
1.75mm
C
L
24mm TAPE AND REEL
24mm
16mm
COVER TAPE
40mm MIN.
ACCESS HOLE
30.4mm
13mm
330mm
100mm
GENERAL INFORMATION
1. 800 PIECES PER REEL.
2. ORDER IN MULTIPLES OF FULL REELS ONLY.
3. MEETS EIA-481 REVISION "A" SPECIFICATIONS.
9
24.4mm
HGT1S3N60A4DS, HGTP3N60A4D
TO-220AB
3 LEAD JEDEC TO-220AB PLASTIC PACKAGE
A
INCHES
E
ØP
A1
Q
H1
TERM. 4
D
45o
E1
D1
L1
b1
L
b
c
MIN
MAX
MIN
MAX
NOTES
A
0.170
0.180
4.32
4.57
-
A1
0.048
0.052
1.22
1.32
-
b
0.030
0.034
0.77
0.86
3, 4
b1
0.045
0.055
1.15
1.39
2, 3
c
0.014
0.019
0.36
0.48
2, 3, 4
D
0.590
0.610
14.99
15.49
-
4.06
-
10.41
-
D1
-
0.160
E
0.395
0.410
E1
-
0.030
e
60o
1
2
e1
3
e
J1
e1
MILLIMETERS
SYMBOL
H1
0.100 TYP
0.200 BSC
0.235
0.255
10.04
-
0.76
-
2.54 TYP
5
5.08 BSC
5
5.97
6.47
-
J1
0.100
0.110
2.54
2.79
6
L
0.530
0.550
13.47
13.97
-
L1
0.130
0.150
3.31
3.81
2
ØP
0.149
0.153
3.79
3.88
-
Q
0.102
0.112
2.60
2.84
-
NOTES:
1. These dimensions are within allowable dimensions of Rev. J of
JEDEC TO-220AB outline dated 3-24-87.
2. Lead dimension and finish uncontrolled in L1.
3. Lead dimension (without solder).
4. Add typically 0.002 inches (0.05mm) for solder coating.
5. Position of lead to be measured 0.250 inches (6.35mm) from bottom of dimension D.
6. Position of lead to be measured 0.100 inches (2.54mm) from bottom of dimension D.
7. Controlling dimension: Inch.
8. Revision 2 dated 7-97.
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site www.intersil.com
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10
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