RB751S-40 N1725 REV.-

RB751S-40
Technical Data
Data Sheet N1725, Rev. -
Green Products
RB751S-40 SCHOTTKY BARRIER DIODE
Features:
•
•
•
Small surface mounting type
Low reverse current and low forward voltage
High reliability
Marking:
The marking bar indicates the cathode
Solid dot = Green molding compound device, if none, the normal device.
Mechanical Dimensions: In mm/Inches
SOD-523
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RB751S-40
Green Products
Technical Data
Data Sheet N1725, Rev. -
Ordering Information:
Device
RB751S-40
Package
Shipping
SOD-523(Pb-Free)
8000pcs / reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification.
Maximum Ratings @TA=25°C unless otherwise specified
Parameter
Peak Reverse Voltage
DC Reverse Voltage
Mean rectifying current
Non-repetitive Peak Forward Surge
Current @t=8.3ms
Power Dissipation
Thermal Resistance from Junction to
Ambient
Junction Temperature
Storage Temperature
Symbol
Value
Unit
VRM
VR
IO
IFSM
40
30
30
V
V
mA
200
mA
PD
RΘJA
150
mW
667
°C/W
Tj
Tstg
125
-55~+150
°C
°C
Electrical Characteristics @TA=25°C unless otherwise specified
Parameter
Reverse current
Forward voltage
Capacitance between terminals
Symbol
IR
VF
CT
Test conditions
VR=30V
IF=1mA
VR=1V,f=1MHz
Min
Typ
Max
Unit
-
2
0.5
0.37
-
μA
V
pF
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RB751S-40
Technical Data
Data Sheet N1725, Rev. -
Green Products
• China - Germany - Korea - Singapore - United States •
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RB751S-40
Technical Data
Data Sheet N1725, Rev. -
Green Products
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales
department for the latest version of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement .
3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or
any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd
assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information,
products or circuits described in the datasheets.
4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any
secondary damage resulting from use at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics
(Nanjing) Co., Ltd.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC
- Sangdest Microelectronics (Nanjing) Co., Ltd.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will
hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third
party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and
regulations..
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