SANGDEST MICROELECTRONICS US1M Green Products Technical Data Data Sheet N1372, Rev. - US1M SURFACE MOUNT ULTRA FAST RECTIFIER Features: • • • • • • • • • • Glass Passivated Die Construction Ideally Suited for Automatic Assembly Low Forward Voltage Drop, High Efficiency Surge Overload Rating to 100 A Peak Low Power Loss Ultra-Fast Recovery Time Plastic Case Material has UL Flammability Classification Rating 94V-O This is a Pb − Free Device All SMC parts are traceable to the wafer lot Additional testing can be offered upon request Mechanical Data: • • • • Case: Low Profile Molded Plastic Terminals: Solder Plated, Solderable per MIL-STD-750, Method 2026 Polarity :Cathode Band or Cathode Notch Weight: 0.064 grams (approx.) Mechanical Dimensions: In mm / Inches SMA/DO-214AC Dim. Min. Max. Min. Max. A 1.70 2.31 0.067 0.091 B 1.29 1.70 0.051 0.067 C 0.051 0.203 0.002 0.008 E 0.76 1.52 0.030 0.060 G 4.70 5.31 0.185 0.209 H 4.00 4.60 0.157 0.181 J 2.18 2.79 0.086 0.110 In mm In inch SMA • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS US1M Green Products Technical Data Data Sheet N1372, Rev. - Marking Diagram: Where XXXXX is YYWWL US 1 M YY WW L = Device Type = Forward Current (1A) = Reverse Voltage (1000V) = Year = Week = Lot Number Cautions：Molding resin Epoxy resin UL:94V-0 Ordering Information: Device US1M Package SMA (Pb-Free) Shipping 5000pcs / reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification. • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS US1M Green Products Technical Data Data Sheet N1372, Rev. - Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified Characteristic Symbol US1M Unit VRRM VRWM VR 1000 V Io 1.0 A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) IFSM 30 A Maximum Forward Voltage VF 1.7 V IRM 5.0 100 µA Typical Thermal Resistance Junction to Lead (Note 1) RθJL 16 K/W Maximum Reverse Recovery Time (Note 2) Trr 100 ns Typical Junction Capacitance (Note 3) CJ 17 pF TJ, TSTG -65 to +175 °C Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Maximum Average Rectified Output Current @TA = 100°C @IF =1.0A, TJ=25°C Peak Reverse Current At Rated DC Blocking Voltage @TA = 25°C @TA = 100°C Operating and Storage Temperature Range Case Style SMA 2 Note: 1. Mounted on P.C. Board with 8.0mm lead area 2. Measured with IF=0.5A; IR=1.0A; IRR=0.25A. 3. Measured at 1.0 MHZ and applied reverse voltage of 4.0 VDC • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS Technical Data Data Sheet N1372, Rev. - US1M Green Products • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS Technical Data Data Sheet N1372, Rev. - US1M Green Products DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations.. • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •