SANGDEST MICROELECTRONICS 86CNQ200 Technical Data Data Sheet N1133, Rev. - Green Products 86CNQ200 SCHOTTKY RECTIFIER Applications: • • • • Switching power supply Converters Free-Wheeling diodes Reverse battery protection Features: • • • • • • • • • • 175℃ TJ operation Center tap module Very Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability Low profile, high current package This is a Pb − Free Device All SMC parts are traceable to the wafer lot Additional testing can be offered upon request 86CNQ200 Case Styles 86CNQ200SL 86CNQ200SM PRM2 PRM2-SL PRM2-SM Mechanical Dimensions: In Inches / mm PRM2 • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS 86CNQ200 Technical Data Data Sheet N1133, Rev. - Green Products PRM2-SL PRM2-SM MARKING, MOLDING RESIN st nd Marking for 86CNQ200/SL/SM, 1 row SS YYWWL, 2 Where YY is the manufacture year WW is the manufacture week code L is the wafer’s Lot Number Molding resin Epoxy resin UL: 94V-0 rd row 86CNQ200/SL/SM, 3 row 1 2 3 (pin) • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS 86CNQ200 Technical Data Data Sheet N1133, Rev. - Green Products Maximum Ratings: Characteristics Symbol Condition Max. Units Peak Inverse Voltage VRWM - 200 V Max. Average Forward IF(AV) 50% duty cycle @TC =130°C, rectangular wave form 80 A Max. Peak One Cycle NonRepetitive Surge Current (per leg) IFSM 8.3 ms, half Sine pulse 150 A Condition @ 40A, Pulse, TJ = 25 °C @ 80A, Pulse, TJ = 25 °C @ 40A, Pulse, TJ = 125 °C @ 80A, Pulse, TJ = 125 °C @VR = rated VR TJ = 25 °C @VR = rated VR TJ = 125 °C @VR = 5V, TC = 25 °C fSIG = 1MHz Measured lead to lead 5 mm from package body - Max. 0.99 1.14 0.69 0.78 1.1 24 Units 900 pF 5.5 nH 10,000 V/μs Specification -55 to +175 -55 to +175 Units °C °C Electrical Characteristics: Characteristics Max. Forward Voltage Drop (per leg) * Symbol VF1 VF2 Max. Reverse Current (per leg) * Max. Junction Capacitance (per leg) Typical Series Inductance (per leg) Max. Voltage Rate of Change * IR1 IR2 CT LS dv/dt V V mA mA Pulse Width < 300µs, Duty Cycle <2% Thermal-Mechanical Specifications: Characteristics Max. Junction Temperature Max. Storage Temperature Maximum Thermal Resistance Junction to Case (per leg) Maximum Thermal Resistance Junction to Case (per package) Typical Thermal Resistance, case to Heat Sink Approximate Weight Mounting Torque Case Style Symbol TJ Tstg Condition - RθJC DC operation 0.85 °C/W RθJC DC operation 0.42 °C/W Rθcs Mounting surface, smooth and greased - 0.30 °C/W 7.8 40(min) 58(max) g wt TM - Kg-cm PRM2 PRM2-SL PRM2-SM • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS Technical Data Data Sheet N1133, Rev. - 86CNQ200 Green Products • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS Technical Data Data Sheet N1133, Rev. - 86CNQ200 Green Products DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations.. • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •