209CNQ135-150 N1240 REV.B

SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N1240, Rev. B
209CNQ…SERIES
Green Products
209CNQ135/209CNQ150 SCHOTTKY RECTIFIER
Applications:
● High current switching power supply ● Plating power supply ● Free-Wheeling diodes
● Reverse battery protection ● Converters ● UPS System ● Welding
Features:
•
•
•
•
•
•
•
•
•
175 °C TJ operation
Center tap module
Low forward voltage drop
High purity, high temperature epoxy encapsulation for enhanced mechanical strength and
moisture resistance
High frequency operation
Guard ring for enhanced ruggedness and long term reliability
This is a Pb − Free Device
All SMC parts are traceable to the wafer lot
Additional testing can be offered upon request
Mechanical Dimensions: In mm/ Inches
PRM4 (Non-Isolated)
MARKING, MOLDING RESIN
st
nd
Marking for 209CNQ135/150, 1 row SS YYWWL, 2 row 209CNQ135/150
Where YY is the manufacture year
WW is the manufacture week code
L is the wafer’s Lot Number
Molding resin
Epoxy resin UL:94V-0
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
SANGDEST
MICROELECTRONICS
209CNQ…SERIES
Technical Data
Data Sheet N1240, Rev. B
Green Products
Maximum Ratings:
Characteristics
Peak Inverse Voltage
Symbol
Condition
VRWM
-
135
Max.
209CNQ135
150
100
200
209CNQ150
peg leg
peg device
Units
V
Max. Average Forward
Current *
IF(AV)
50% duty cycle @TC =110°C,
rectangular wave form
Max. Peak One Cycle NonRepetitive Surge Current
(peg leg)
IFSM
8.3 ms, half Sine pulse
1440
A
Condition
@ 100A, Pulse, TJ = 25 °C
@ 200A, Pulse, TJ = 25 °C
@ 100A, Pulse, TJ = 125 °C
@ 200A, Pulse, TJ = 125 °C
@VR = rated VR TJ = 25 °C
@VR = rated VR ,TJ = 125 °C
@VR = 5V, TC = 25 °C
fSIG = 1MHz
Measured lead to lead 5 mm
from package body
-
Max.
1.03
1.22
0.71
0.82
3
45
Units
3000
pF
7.0
nH
10,000
V/μs
Specification
-55 to +175
-55 to +175
Units
°C
°C
A
Electrical Characteristics:
Characteristics
Max. Forward Voltage Drop
(per leg) *
Symbol
VF1
VF2
Max. Reverse Current (per
leg) *
Max. Junction Capacitance
(per leg)
Typical Series Inductance
(per leg)
Max. Voltage Rate of Change
*
IR1
IR2
CT
LS
dv/dt
V
V
mA
mA
Pulse Width < 300µs, Duty Cycle <2%
Thermal-Mechanical Specifications:
Characteristics
Max. Junction Temperature
Max. Storage Temperature
Maximum Thermal
Resistance Junction to Case
(per leg)
Maximum Thermal
Resistance Junction to Case
(per package)
Typical Thermal Resistance,
case to Heat Sink
Symbol
TJ
Tstg
Condition
-
RθJC
DC operation
0.5
°C/W
RθJC
DC operation
0.25
°C/W
Rθcs
Mounting surface, smooth and
greased
0.10
°C/W
Mounting Torque
TM
-
Approximate Weight
Case Style
wt
-
Mounting
Torque
Terminal
Torque
24(min)
35(max)
35(min)
46(max)
Kg-cm
79
g
PRM4 Non-Isolated
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N1240, Rev. B
209CNQ…SERIES
Green Products
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N1240, Rev. B
209CNQ…SERIES
Green Products
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales
department for the latest version of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement .
3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or
any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd
assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information,
products or circuits described in the datasheets.
4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any
secondary damage resulting from use at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics
(Nanjing) Co., Ltd.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC
- Sangdest Microelectronics (Nanjing) Co., Ltd.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will
hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third
party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and
regulations..
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
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