301CMQ SERIES N1211 REV.B

301CMQ… SERIES
Technical Data
Data Sheet N1211, Rev. B
Green Products
301CMQ035/301CMQ040/301CMQ045/301CMQ050
SCHOTTKY RECTIFIER
Applications:
● High current switching power supply ● Plating power supply ● Free-Wheeling diodes
● Reverse battery protection ● Converters ● UPS System ● Welding
Features:
•
•
•
•
•
•
•
•
•
175 ℃ TJ operation
Center tap module
High purity, high temperature epoxy encapsulation for enhanced mechanical strength and
moisture resistance
Low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term reliability
This is a Pb − Free Device
All SMC parts are traceable to the wafer lot
Additional testing can be offered upon request
Mechanical Dimensions: In mm/Inches
PRM4 (Isolated)
MARKING,MOLDING RESIN
st
nd
Marking for 301CMQ035/040/045/050, 1 row SS YYWWL, 2 row 301CMQ035/040/045/050
Where YY is the manufacture year
WW is the manufacture week code
L is the wafer’s Lot Number
Molding resin
Epoxy resin UL:94V-0
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301CMQ… SERIES
Technical Data
Data Sheet N1211, Rev. B
Green Products
Maximum Ratings:
Characteristics
Symbol
Condition
-
35
40
45
50
150
300
Max.
301CMQ035
301CMQ040
301CMQ045
301CMQ050
per leg
per device
Units
V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
Average Forward Current
IF(AV)
50% duty cycle @TC =81°C,
rectangular wave form
IFSM
8.3 ms, half Sine pulse
3840
A
EAS
TJ=25℃,IAS=40A,L=0.34mH
202
mJ
IAR
Current decaying linearly to
zero in 1 μsec Frequency
limited by TJ max. VA=1.5×
VR typical
30
A
Condition
@ 150A, Pulse, TJ = 25 °C
@ 300A, Pulse, TJ = 25 °C
@ 150A, Pulse, TJ = 125 °C
@ 300A, Pulse, TJ = 125 °C
@VR = rated VR TJ = 25 °C
@VR = rated VR TJ = 125 °C
@VR = 5V, TC = 25 °C
fSIG = 1MHz
Measured lead to lead 5 mm
from package body
-
Max.
0.69
0.90
0.59
0.76
10
90
Condition
-
Specification
-55 to +175
-55 to +175
Units
°C
°C
Peak One Cycle Non-Repetitive
Surge Current
(per leg)
Non-Repetitive Avalanche
Energy(peg leg)
Repetitive Avalanche Current(peg
leg)
A
Electrical Characteristics:
Characteristics
Forward Voltage Drop
(per leg) *
Symbol
VF1
VF2
Reverse Current (per leg) *
Junction Capacitance
(per leg)
Typical Series Inductance
(per leg)
Voltage Rate of Change
Insulation Voltage
*
IR1
IR2
CT
LS
dv/dt
VRMS
Units
V
V
mA
mA
5200
pF
7.0
nH
10,000
1000
V/μs
V
Pulse Width < 300µs, Duty Cycle <2%
Thermal-Mechanical Specifications:
Characteristics
Junction Temperature
Storage Temperature
Typical Thermal Resistance
Junction to Case(per leg)
Typical Thermal Resistance
Junction to Case(per package)
Typical Thermal Resistance, case
to Heat Sink
Symbol
TJ
Tstg
RθJC
DC operation
0.50
°C/W
RθJC
DC operation
0.25
°C/W
Rθcs
Mounting surface, smooth
and greased
0.10
°C/W
Mounting Torque
TM
-
Approximate Weight
Case Style
wt
-
Mounting
Torque Base
Terminal
Torque
79
PRM4 Isolated
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24(min)
35(max)
35(min)
46(max)
Kg-cm
g
301CMQ… SERIES
Technical Data
Data Sheet N1211, Rev. B
Green Products
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301CMQ… SERIES
Technical Data
Data Sheet N1211, Rev. B
Green Products
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales
department for the latest version of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement .
3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or
any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd
assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information,
products or circuits described in the datasheets.
4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any
secondary damage resulting from use at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics
(Nanjing) Co., Ltd.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC
- Sangdest Microelectronics (Nanjing) Co., Ltd.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will
hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third
party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and
regulations..
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