444CNQ SERIES N1234 REV.B

SANGDEST
MICROELECTRONICS
444CNQ… SERIES
Technical Data
Data Sheet N1234, Rev. B
Green Products
444CNQ035/444CNQ040/444CNQ045
SCHOTTKY RECTIFIER
Applications:
● High current switching power supply ● Plating power supply ● Free-Wheeling diodes
● Reverse battery protection ● Converters ● UPS System ● Welding
Features:
•
•
•
•
•
•
•
•
•
125℃ TJ operation
Center tap module
High purity, high temperature epoxy encapsulation for enhanced mechanical strength and
moisture resistance
Low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term reliability
This is a Pb − Free Device
All SMC parts are traceable to the wafer lot
Additional testing can be offered upon request
Mechanical Dimensions: In mm/ Inches
PRM4 (Non-Isolated)
MARKING,MOLDING RESIN
st
nd
Marking for 444CNQ035/040/045, 1 row SS YYWWL, 2 row 444CNQ035/040/045
Where YY is the manufacture year
WW is the manufacture week code
L is the wafer’s Lot Number
Molding resin
Epoxy resin UL:94V-0
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
SANGDEST
MICROELECTRONICS
444CNQ… SERIES
Technical Data
Data Sheet N1234, Rev. B
Green Products
Maximum Ratings:
Characteristics
Peak Inverse Voltage
Max. Average Forward
Current
Max. Peak One Cycle NonRepetitive Surge Current
(per leg)
Non-Repetitive Avalanche
Energy(peg leg)
Repetitive Avalanche
Current(peg leg)
Symbol
VRWM
Condition
-
35
40
45
220
440
Max.
444CNQ035
444CNQ040
444CNQ045
per leg
per device
Units
V
IF(AV)
50% duty cycle @TC =81°C,
rectangular wave form
A
IFSM
8.3 ms, half Sine pulse
4560
A
EAS
TJ=25℃,IAS=40A,L=0.34mH
270
mJ
IAR
Current decaying linearly to
zero in 1 μsec Frequency
limited by TJ max. VA=1.5×
VR typical
40
A
Symbol
Condition
@ 220A, Pulse, TJ = 25 °C
@ 440A, Pulse, TJ = 25 °C
@ 220A, Pulse, TJ = 125 °C
@ 440A, Pulse, TJ = 125 °C
@VR = rated VR TJ = 25 °C
@VR = rated VR TJ = 125 °C
@VR = 5V, TC = 25 °C
fSIG = 1MHz
Measured lead to lead 5 mm
from package body
-
Electrical Characteristics:
Characteristics
Max. Forward Voltage Drop
(per leg) *
VF1
VF2
Max. Reverse Current (per
leg) *
Max. Junction Capacitance
(per leg)
Typical Series Inductance
(per leg)
Max. Voltage Rate of Change
*
IR1
IR2
CT
LS
dv/dt
Max.
0.53
0.69
0.51
0.68
20
2400
Units
V
V
mA
mA
10300
pF
5.0
nH
10,000
V/μs
Specification
-55 to +125
-55 to +125
Units
°C
°C
Pulse Width < 300µs, Duty Cycle <2%
Thermal-Mechanical Specifications:
Characteristics
Max. Junction Temperature
Max. Storage Temperature
Maximum Thermal
Resistance Junction to Case
(per leg)
Maximum Thermal
Resistance Junction to Case
(per package)
Typical Thermal Resistance,
case to Heat Sink
Symbol
TJ
Tstg
Condition
-
RθJC
DC operation
0.20
°C/W
RθJC
DC operation
0.10
°C/W
Rθcs
Mounting surface, smooth
and greased
0.10
°C/W
Mounting Torque
TM
Approximate Weight
Case Style
wt
Mounting
Torque
Terminal
Torque
79
PRM4 Non-Isolated
24(min)
35(max)
35(min)
46(max)
Kg-cm
g
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N1234, Rev. B
444CNQ… SERIES
Green Products
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N1234, Rev. B
444CNQ… SERIES
Green Products
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales
department for the latest version of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement .
3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or
any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd
assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information,
products or circuits described in the datasheets.
4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any
secondary damage resulting from use at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics
(Nanjing) Co., Ltd.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC
- Sangdest Microelectronics (Nanjing) Co., Ltd.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will
hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third
party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and
regulations..
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
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