303DMQ600 N1674 REV.-

SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N1674, Rev. -
303DMQ600
Green Products
303DMQ600 ULTRAFAST RECTIFIER
Applications:
● High current switching power supply ● Plating power supply ● Free-Wheeling diodes
● Reverse battery protection ● Converters ● UPS System ● Welding
Features:
•
•
•
•
•
•
•
•
•
175 ℃ TJ operation
Center tap module
High purity, high temperature epoxy encapsulation for enhanced mechanical strength and
moisture resistance
Low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term reliability
This is a Pb − Free Device
All SMC parts are traceable to the wafer lot
Additional testing can be offered upon request
Mechanical Dimensions: In mm/Inches
PRM4 (Isolated)
MARKING,MOLDING RESIN
st
nd
Marking for 303DMQ600, 1 row SS YYWWL, 2 row303DMQ600
Where YY is the manufacture year
WW is the manufacture week code
L is the wafer’s Lot Number
Molding resin
Epoxy resin UL:94V-0
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
SANGDEST
MICROELECTRONICS
303DMQ600
Technical Data
Data Sheet N1674, Rev. -
Green Products
Maximum Ratings:
Characteristics
Peak Inverse Voltage
Max. Average Forward
Current
Peak One Cycle NonRepetitive Surge Current
Non-Repetitive Avalanche
Energy(per leg)
Repetitive avalanche current
(per leg)
Symbol
VRWM
IF(AV)
IFSM
EAS
IAR
Condition
50% duty cycle @TC
=117°C, rectangular wave
form
8.3 ms, half Sine pulse
TJ=25°C,IAS=1A,L=30mH
Max.
600(303DMQ600)
Units
V
150(per leg)
300(per device)
A
3000
A
15
mJ
1
A
Current decaying linearly to
zero in 1µsec frequency
limited by TJ max.VA=1.5X
VR typical
Electrical Characteristics:
Characteristics
Forward Voltage Drop
Symbol
VF1
VF2
Reverse Current
Junction Capacitance
IR1
IR2
CT
Typical Series Inductance
LS
Max. Voltage Rate ofChange
dv/dt
Condition
@ 150A, Pulse, TJ = 25 °C
@ 300 A, Pulse, TJ = 25 °C
@ 150A, Pulse, TJ = 125 °C
@ 300 A, Pulse, TJ = 125 °C
@VR = rated VR TJ = 25 °C
@VR = rated VR TJ = 125 °C
@VR = 5V, TC = 25 °C
fSIG = 1MHz
Measured lead to lead 5 mm
from package body
-
Max.
1.40
1.68
1.20
1.38
0.1
20
4150
Units
V
6.0
nH
10,000
V/μs
Specification
-55 to +175
-55 to +175
0.50
Units
°C
°C
°C/W
V
mA
mA
pF
* Pulse Width < 300µs, Duty Cycle <2%
Thermal-Mechanical Specifications:
Characteristics
Junction Temperature
Storage Temperature
Maximum Thermal
Resistance Junction to Case
(per leg)
Maximum Thermal
Resistance Junction to Case
(per package)
Maximum Thermal
Resistance, Case to Heat
Sink
Approximate Weight
Mounting Torque
Case Style
Symbol
TJ
Tstg
RθJC
Condition
DC operation
RθJC
DC operation
0.25
°C/W
RθCS
Mounting surface, smooth and
greased
0.10
°C/W
wt
TM
Non-Iubricatedthreads
79
Mounting
Torque
Terminal
Torque
PRM4 Isolated
24 (min)
35 (max)
35(min)
46 (max)
g
Kg-cm
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N1674, Rev. -
303DMQ600
Green Products
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales
department for the latest version of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement .
3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or
any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd
assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information,
products or circuits described in the datasheets.
4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any
secondary damage resulting from use at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics
(Nanjing) Co., Ltd.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC
- Sangdest Microelectronics (Nanjing) Co., Ltd.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will
hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third
party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and
regulations..
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
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