299

NTE299
Silicon NPN Transistor
RF Power Amp, Driver
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Power Dissipation (TC = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +125°C
Storage Temperatur Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +125°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25°C/W
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max Unit
Collector–Base Breakdown Voltage
V(BR)CBO IC = 1mA, IE = 0
75
–
–
V
Collector–Emitter Breakdown Voltage
V(BR)CEO IC = 10mA, RBE = ∞
35
–
–
V
Emitter–Base Breakdown Voltage
V(BR)EBO IE = 1mA, IC = 0
4
–
–
V
µA
Collector Cutoff Current
ICBO
VCB = 30V, IE = 0
–
–
10
DC Current Gain
hFE
VCE = 10V, IC = 0.1A
10
70
300
Power Output
PO
VCC = 12V, f = 27MHz, PIN = 75mW,
IC < 166mA
1.2
1.4
–
.380 (9.56)
.180 (4.57)
.132 (3.35) Dia
C
.500
(12.7)
.325
(9.52)
1.200
(30.48)
Ref
.070 (1.78) x 45°
Chamf
.300
(7.62)
.050 (1.27)
.400
(10.16)
Min
C
.100 (2.54)
B
E
.100 (2.54)
W