296

NTE296
Silicon PNP Transistor
General Purpose Amplifier
Description:
The NTE296 is a silicon PNP transistor in a TO202 type case designed for general purpose applications requiring high breakdown voltages, low saturation voltages and low capacitance.
Absolute Maximum Ratings:
Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V
Collector−Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V
Emitter−Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
Total Power Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16mW/°C
Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80mW/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55° to +150°C
Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62.5°C/W
Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.5°C/W
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
Collector−Emitter Breakdown Voltage
V(BR)CEO
IC = 1mA, IB = 0, Note 1
300
−
−
V
Collector−Base Breakdown Voltage
V(BR)CBO
IC = 100µA, IE = 0
300
−
−
V
Emitter−Base Breakdown Voltage
V(BR)EBO
IE = 10µA, IC = 0
5
−
−
V
Collector Cutoff Current
ICBO
VCB = 200V, IE = 0
−
−
0.2
µA
Emitter Cutoff Current
IEBO
VBE = 3V, IC = 0
−
−
0.1
µA
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
IC = 1mA, VCE = 10V
25
−
−
IC = 10mA, VCE = 10V
30
−
−
IC = 30mA, VCE = 10V
30
−
−
Unit
ON Characteristics
DC Current Gain
hFE
Collector−Emitter Saturation Voltage
VCE(sat)
IC = 30mA, IB = 3mA
−
−
0.75
V
Base−Emitter Saturation Voltage
VBE(sat)
IC = 30mA, IB = 3mA
−
−
0.9
V
IC = 10mA, VCE = 20V, f = 10MHz
45
−
−
MHz
VCB = 20V, IE = 0, f = 1MHz
−
−
8
pF
Dynamic Characteristics
Current Gain−Bandwidth Product
fT
Collector−Base Capacitance
Ccb
Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
.380 (9.56)
.180 (4.57)
.132 (3.35) Dia
C
1.200
(30.48)
Ref
.500
(12.7)
.325
(9.52)
.070 (1.78) x 45°
Chamf
.300
(7.62)
.400
(10.16)
Min
.100 (2.54)
.050 (1.27)
E
B
C
.100 (2.54)