190

NTE190
Silicon NPN Transistor
High Voltage Amplifier
Description:
The NTE190 is an NPN silicon transistor in a TO202N type case designed for horizontal drive applications, high voltage linear amplifiers, and high voltage transistor regulators.
Features:
D High Collector–Emitter Breakdown Voltage: V(BR)CEO = 180V (Min) @ IC = 1mA
D Low Collector–Emitter Saturation Voltatge: VCE(sat) = 0.5V (Max) @ IC = 200mA
D High Power Dissipation: PD = 10W @ TC = +25°C
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180V
Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180V
Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Total Device Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8mW/°C
Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80mW/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Lead Temperature (During Soldering, 1/16” from case for 10sec), TL . . . . . . . . . . . . . . . . . . . +260°C
Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125°C/W
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.5°C/W
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ Max Unit
OFF Characteristics
Collector–Emitter Breakdown Voltage V(BR)CEO IC = 1mA, IB = 0
180
–
–
V
Collector–Base Breakdown Voltage
V(BR)CBO IC = 100µA, IE = 0
180
–
–
V
Emitter–Base Breakdown Voltage
V(BR)EBO IE = 100µA, IC = 0
5
–
–
V
–
–
0.1
mA
Collector Cutoff Current
ICBO
VCB = 150V, IE = 0
Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ Max Unit
ON Characteristics (Note 1)
DC Current Gain
hFE
IC = 10mA, VCE = 10V
40
–
–
Base–Emitter ON Voltage
VBE(on)
IC = 200mA, VCE = 1V
–
–
1.0
V
Collector–Emitter Saturation Voltage
VCE(sat)
IC = 200mA, IB = 20mA
–
–
0.5
V
fT
IC = 50mA, VCE = 20V,
f = 20MHz
35
–
–
MHz
Dynamic Characteristics
Current Gain–Bandwidth Product
Output Capacitance
Cob
VCB = 10V, IE = 0, f = 100kHz
–
–
12
pF
Input Capacitance
Cib
VBE = 0.5V, IC = 0, f = 100kHz
–
–
110
pF
Note 1. Pulse Test: Pulse Width ≤ 300µs. Duty Cycle ≤ 2%.
.380 (9.65) Max
.050 (1.27)
.160
(4.06)
.280 (7.25) Max
.128 (3.28) Dia
.100 (2.54)
.218
(5.55)
E B C
.995
(25.3)
.475
(12.0)
Min
.100 (2.54)
.200 (5.08)
Collector Connected to Tab