240

NTE191 (NPN) & NTE240 (PNP)
Silicon Complementary Transistors
High Voltage Video Amplifier
Description:
The NTE191 (NPN) and NTE240 (PNP) are silicon complementary transistors in a TO202N type
package designed for high–voltage video and luminance output stages in TV receivers.
Features:
D High Collector–Emitter Breakdown Voltage: V(BR)CEO = 300V (Min) @ IC = 1mA
D Low Collector–Emitter Saturation Voltage: VCE(sat) = 0.75V (Max) @ IC = 30mA
D Low Collector–Base Capacitance: Ccb = 3pF (Max) @ VCB = 20V
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V
Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V
Emitter–Base Voltage, VEBO
NTE191 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
NTE240 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
Total Device Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8mW/°C
Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80mW/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.5°C/W
Thermal Resistance, Junction–to–Ambient (Note 2), RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . 125°C/W
Note 1. NTE191 is a discontinued device and no longer available.
Note 2. RthJA is measured with the device soldered into a typical printed circuit board.
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
Collector–Emitter Breakdown Voltage
V(BR)CEO IC = 1mA, IB = 0, Note 3
300
–
–
V
Collector–Base Breakdown Voltage
V(BR)CBO IC = 100µA, IE = 0
300
–
–
V
Emitter–Base Breakdown Voltage
NTE191
V(BR)EBO
6
–
–
V
5
–
–
V
IE = 100µA, IC = 0
NTE240
Note 3. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics (Cont’d)
Collector Cutoff Current
ICBO
VCB = 200V, IE = 0
–
–
0.2
µA
Emitter Cutoff Current
IEBO
VBE = 6V, IC = 0
–
–
0.1
µA
hFE
IC = 1mA, VCE = 10V, Note 3
25
–
–
IC = 10mA, VCE = 10V, Note 3
40
–
–
IC = 30mA, VCE = 10V, Note 3
40
–
–
IC = 10mA, VCE = 10V, Note 3
30
–
–
IC = 30mA, VCE = 10V, Note 3
30
–
–
IC = 30mA, IB = 3mA
–
–
0.75
V
IC = 30mA, VCE = 10V
–
–
0.85
V
–
–
0.90
V
IC = 10mA, VCE = 20V,
f = 100MHz, Note 2
45
–
–
MHz
60
–
–
MHz
VCB = 20V, IE = 0, f = 1MHz
–
–
3.0
pF
–
–
8.0
pF
ON Characteristics
DC Current Gain (NTE191 & NTE240)
NTE191
NTE240
Collector–Emitter Saturation Voltage
VCE(sat)
Base–Emitter ON Voltage
NTE191
VBE(on)
NTE240
Dynamic Characteristics
Current Gain–Bandwidth Product
NTE191
fT
NTE240
Collector–Base Capacitance
NTE191
Ccb
NTE240
Note 3. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
.380 (9.65) Max
.050 (1.27)
.160
(4.06)
.280 (7.25) Max
.128 (3.28) Dia
.100 (2.54)
.218
(5.55)
E B C
.995
(25.3)
.475
(12.0)
Min
.100 (2.54)
.200 (5.08)
Collector Connected to Tab
Similar pages