2311

NTE2311
Silicon NPN Transistor
High Voltage, High Speed Switch
TO−3P Type Package
Description:
The NTE2311 is a silicon NPN transistor in a TO−3P type case designed for use in high voltage, high
speed switching applications.
Features:
D High Blocking Capability: VCEX = 1000V
D Wide Surge Area: ICSM = 55A @ 350V
Applications:
D Switchmode Power Supply
D DC/DC and DC/AC Converters
D Motor Control
Absolute Maximum Ratings: (TC = +25C unless otherwise specified)
Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450V
Collector−Emitter Voltage (VBE = −2.5V), VCEX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000V
Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V
Collector Current (tp  5ms), IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A
Base Current (tp  5ms), IB
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A
Power Dissipation, Ptot
TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150W
TC = +60C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 115W
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +175C
Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1C/W
Electrical Characteristics: (TJ = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
450
−
−
V
7
−
30
V
VCE = VCEX,
V
BE = −2.5V
TJ = +125C
−
−
0.2
mA
−
−
2.0
mA
TJ = +25C
−
−
0.5
mA
−
−
4.0
mA
OFF Characteristics
Collector−Emitter Sustaining Voltage VCEO(sus) IB = 0, IC = 200mA, L = 25mH
Emitter−Base Breakdown Voltage
Collector Cutoff Current
V(BR)EBO IC = 0, IE = 50mA
ICEX
ICER
TJ = +25C
VCE = VCEX,
TJ = +125C RBE = 10
Rev. 6−16
Electrical Characteristics (Cont’d): (TJ = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics (Cont,d)
Emitter Cutoff Current
IEBO
IC = 0, VBE = −5V
−
−
1
mA
hFE
IC = 8Adc, VCE = 5Vdc)
10
−
−
−
IC = 8A, IB = 1.6A
−
−
1.5
V
IC = 12A, IB = 2.4A
−
−
5.0
V
IC = 8A, IB = 1.6A
−
−
1.6
V
−
0.55
1.0
s
−
1.5
3.0
s
−
0.3
0.8
s
−
3.5
−
s
−
−
5.0
s
−
0.08
−
s
−
−
0.4
s
ON Characteristics (Note 1)
DC Current Gain
Collector−Emitter Saturation Voltage
Base−Emitter Saturation Voltage
VCE(sat)
VBE(sat)
Switching Characteristics (Switching Times on Resistive Load)
Turn−On Time
ton
Storage Time
ts
Fall Time
tf
VCC = 150V, IC = 8A,
IB1 = −IB2 = 1.6A
Switching Characteristics (Switching Times on Inductive Load)
Storage Time
ts
Fall Time
tf
TJ = +25C
VCC = 300V,
V
BB = −5V,
TJ = +125C
LB = 3H,
TJ = +25C IC = 8A,
TJ = +125C IBend = 1.6A
Note 1. Pulse Test: Pulse Width < 300s, Duty Cycle < 2%
.190 (4.82)
.615 (15.62)
C
.787
(20.0)
.591
(15.02)
.126 (3.22)
Dia
.787
(20.0)
B
C
E
.215 (5.47)