2301

NTE2301
Silicon NPN Transistor
High Voltage Horizontal Output
Description:
The NTE2301 is a silicon NPN power transistor in a TO218 type package designed for use in large
screen deflection circuits.
Features:
D Collector–Emitter Voltage: VCEX = 1500V
D Glassivated Base–Collector Junction
D Safe Operating Area @ 50µs = 20A, 400V
D Switching Times with Inductive Loads: tf = 0.4µs (Typ) @ IC = 4.5A
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 750V
Collector–Emitter Voltage, VCEX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V
Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A
Continuous Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Continuous Emitter Current, IE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9A
Total Power Dissipation, PD
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W
TC = +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.8W/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.25°C/W
Maximum Lead Temperature (During Soldering, 1/8” from Case for 5sec), TL . . . . . . . . . . . +275°C
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
750
–
–
V
OFF Characteristics (Note 1)
Collector–Emitter Sustaining Voltage
VCEO(sus) IC = 50mA, IB = 0
Collector Cutoff Current
ICES
VCE = 1500V, VBE = 0
–
–
1
mA
Emitter Cutoff Current
IEBO
VBE = 5V, IC = 0
–
–
1
mA
IC = 4.5A, IB = 1.8A
–
–
5
V
IC = 3.5A, IB = 1.5A
–
–
5
V
IC = 4.5A, IB = 1.8A
–
–
1.5
V
IC = 3.5A, IB = 1.5A
–
–
1.5
V
IC = 100mA, VCE = 5V, ftest = 1MHz
–
4
–
MHz
VCB = 10V, IE = 0, f = 0.1MHz
–
125
–
pF
IC = 4.5A, IB1 = 1.8A, LB = 8µH
–
0.4
1.0
µs
IC = 4.5A, IB1 = 1.8A, LB = 8µH,
TC = +100°C
–
0.6
–
µs
ON Characteristics (Note 1)
Collector–Emitter Saturation Voltage
VCE(sat)
Base–Emitter Saturation Voltage
VBE(sat)
Dynamic Characteristics
Current Gain – Bandwidth Product
fT
Output Capacitance
Cob
Switching Characteristics
Fall Time
tf
Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle = 2%.
.060 (1.52)
.600
(15.24)
.173 (4.4)
C
.156
(3.96)
Dia.
B
C
.550
(13.97)
.430
(10.92)
E
.500
(12.7)
Min
.055 (1.4)
.015 (0.39)
.216 (5.45)
NOTE: Dotted line indicates that
case may have square corners