2318

NTE2318
Silicon NPN Transistor
High Voltage, High Speed Switch
Description:
The NTE2318 is a high–voltage, high–speed, switching NPN transistor with an internal damper diode
in a TO218 type package. This device is specifically designed for use in large screen color deflection
circuits.
Features:
D Collector–Emitter Voltage: VCE = 1500V
D Collector–Emitter Sustaining Voltage: VCEO(sus) = 700V
D Switching Time with Inductive Loads: tf = 0.5µs (Typ) @ IC = 4.5A
D Internal Flyback Diode
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO(sus) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700V
Collector–Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V
Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A
Base Current, IB
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A
Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W/°C
Operating Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1°C/W
Maximum Lead Temperature (During Soldering, 1/8” from case, 5sec), TL . . . . . . . . . . . . . . +275°C
Note 1. Pulse Test: Pulse Width = 5ms, Duty Cycle ≤ 10%.
Electrical Characteristics: (TC = +25°C, unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
700
–
–
V
VCE = 1500V, VBE = 0
–
–
0.1
mA
VCE = 1500V, VBE = 0,
TC = +125°C
–
–
2.0
mA
VEB = 6V, IC = 0
–
–
300
mA
OFF Characteristics (Note 1)
Collector–Emitter Sustaining Voltage VCEO(sus) IC = 100mA, IB = 0
Collector Cutoff Current
Emitter–Base Leakage Current
ICES
IEBO
Electrical Characteristics (Cont’d): (TC = +25°C, unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
2.25
–
–
Unit
ON Characteristics (Note 1)
DC Current Gain
hFE
IC = 4.5A, VCE = 5V
Collector–Emitter Saturation Voltage
VCE(sat)
IC = 4.5A, IB = 2A
–
–
1
V
Base–Emitter Saturation Voltage
VBE(sat)
IC = 4.5A, IB = 2A
–
–
1.3
V
fT
IC = 0.1A, VCE = 5V, f = 1MHz
–
7
–
MHz
Cob
VCB = 10V, IE = 0, f = 0.1MHz
–
125
–
pF
IC = 4.5A, IB = 1.8A,
LB = 10µH
µ
–
8.0
–
µs
–
0.5
–
µs
Dynamic Characteristics
Current–Gain Bandwidth Product
Output Capacitance
Switching Characteristics
Storage Time
ts
Fall Time
tf
Note 1. Pulse Test: Pulse Width = 5ms, Duty Cycle ≤ 10%.
.600
(15.24)
.060 (1.52)
.173 (4.4)
C
.156
(3.96)
Dia.
B
C
.550
(13.97)
.430
(10.92)
E
.500
(12.7)
Min
.055 (1.4)
.015 (0.39)
.216 (5.45)
NOTE: Dotted line indicates that
case may have square corners