NTE2973 MOSFET N−Channel, Enhancement Mode High Speed Switch TO3P Type Package D Applications: D SMPS D DC−DC Converter D Battery Charger D Power Supply of Printer D Copier D HDD, FDD, TV, VCR D Personal Computer G S Absolute Maximum Ratings: (TC = +255C unless otherwise specified) Drain−Source Voltage (VGS = 0V), VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900V Gate−Source Voltage (VDS = 0V), VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +30V Drain Current, ID Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14A Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42A Maximum Power Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 275W Channel Temperature Range, Tch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −555 to +1505C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −555 to +1505C Thermal Resistance, Channel−to−Case, Rth(ch−c) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.455C/W Electrical Characteristics: (Tch = +255C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Drain−Source Breakdown Voltage V(BR)DSS VDS = 0V, ID = 1mA 900 − − V Gate−Source Breakdown Voltage V(BR)GSS VDS = 0V, IG = +1005 A +30 − − V Gate−Source Leakage IGSS VGS = +25V, VDS = 0V − − +10 5A Zero Gate Voltage Drain Current IDSS VDS = 900V, VGS = 0 − − 1.0 mA Gate Threshold Voltage VGS(th) VDS = 10V, ID = 1mA 2.0 3.0 4.0 V Static Drain−Source ON Resistance RDS(on) VGS = 10V, ID = 7A − 0.63 0.85 + Drain−Source On−State Voltage VDS(on) VGS = 10V, ID = 7A − 4.41 5.95 V |yfs| VGS = 10V, ID = 7A 9 15 − S Forward Transfer Admittance Rev. 10−13 Electrical Characteristics (Cont’d): (Tch = +255C unless otherwise specified) Parameter Symbol Test Conditions Typ Max Unit − 2900 − pF Input Capacitance Ciss Output Capacitance Coss − 290 − pF Reverse Transfer Capacitance Crss − 50 − pF Turn−On Delay Time td(on) − 45 − ns − 65 − ns td(off) − 325 − ns tf − 100 − ns − 1.0 1.5 V Rise Time tr Turn−Off Delay Time Fall Time Diode Forward Voltage VSD VGS = 0V, VDS = 25V, f = 1MHz Min VDD = 200V, ID = 7A, VGS = 10V, RGEN = RGS = 50+ IS = 7A, VGS = 0V .190 (4.82) .787 (20.0) .615 (15.62) .591 (15.02) .126 (3.22) Dia .787 (20.0) G D S .215 (5.47)