TSTA7100 Datasheet

TSTA7100
Vishay Semiconductors
Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs
FEATURES
• Package type: leaded
• Package form: TO-18
• Dimensions (in mm): ∅ 4.7
• Peak wavelength: λp = 875 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity: ϕ = ± 5°
94 8483
• Low forward voltage
• Suitable for high pulse current operation
• Good spectral matching with Si photodetectors
• Lead (Pb)-free component in accordance
RoHS 2002/95/EC and WEEE 2002/96/EC
DESCRIPTION
TSTA7100 is an infrared, 875 nm emitting diode in GaAlAs
technology in a hermetically sealed TO-18 package with
lens.
with
APPLICATIONS
• Radiation source near infrared range
PRODUCT SUMMARY
COMPONENT
Ie (mW/sr)
ϕ (deg)
λP (nm)
tr (ns)
50
±5
875
600
TSTA7100
Note
Test conditions see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE
PACKAGING
REMARKS
PACKAGE FORM
Bulk
MOQ: 1000 pcs, 1000 pcs/bulk
TO-18
TSTA7100
Note
MOQ: minimum order quantity
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VALUE
Reverse voltage
TEST CONDITION
VR
5
UNIT
V
Forward current
IF
100
mA
mA
Peak forward current
tp/T = 0.5, tp ≤ 100 µs
IFM
200
Surge forward current
tp ≤ 100 µs
IFSM
2.5
A
PV
180
mW
PV
500
mW
Tj
100
°C
Tstg
- 55 to + 100
°C
Power dissipation
Tcase ≤ 25 °C
Junction temperature
Storage temperature range
Thermal resistance junction/ambient
leads not soldered
RthJA
450
K/W
Thermal resistance junction/case
leads not soldered
RthJC
150
K/W
Note
Tamb = 25 °C, unless otherwise specified
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For technical questions, contact: [email protected]
Document Number: 81044
Rev. 1.7, 04-Sep-08
TSTA7100
Infrared Emitting Diode, RoHS Compliant, Vishay Semiconductors
875 nm, GaAlAs
125
R thJC
500
IF - Forward Current (mA)
PV - Power Dissipation (mW)
600
400
300
200
R thJA
100
100
R thJC
75
50
R thJA
25
0
0
0
25
50
75
100
125
0
Tamb - Ambient Temperature (°C)
12790
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
20
Tamb
94 7971
40
60
80
100
- Ambient Temperature (°C)
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS
PARAMETER
Forward voltage
TEST CONDITION
SYMBOL
IF = 100 mA, tp ≤ 20 ms
VF
IR = 100 µA
V(BR)
Breakdown voltage
Junction capacitance
MIN.
TYP.
MAX.
1.4
1.8
UNIT
V
5
V
VR = 0 V, f = 1 MHz, E = 0
Cj
Radiant intensity
IF = 100 mA, tp ≤ 20 ms
Ie
Radiant power
IF = 100 mA, tp ≤ 20 ms
φe
10
mW
IF = 100 mA
TKφe
- 0.7
%/K
ϕ
±5
deg
Peak wavelength
IF = 100 mA
λp
875
nm
Spectral bandwidth
IF = 100 mA
Δλ
80
nm
IF = 100 mA
tr
600
ns
IF = 1.5 A, tp/T = 0.01, tp ≤ 10 µs
tr
300
ns
d
1.5
mm
Temperature coefficient of φe
Angle of half intensity
Rise time
Virtual source diameter
20
20
pF
50
100
mW/sr
Note
Tamb = 25 °C, unless otherwise specified
BASIC CHARACTERISTICS
Tamb = 25 °C, unless otherwise specified
10 4
IF - Forward Current (mA)
IF - Forward Current (A)
10 1
I FSM = 2.5 A (single pause)
t p /T= 0.01
10 0
0.05
0.1
0.2
tp = 100 µs
tp/T= 0.001
10 3
10 2
0.5
10 -1
10 -2
94 8003
10 1
10 -1
10 0
10 1
t p - Pulse Duration (ms)
10 2
Fig. 3 - Pulse Forward Current vs. Pulse Duration
Document Number: 81044
Rev. 1.7, 04-Sep-08
94 8005
0
1
2
3
4
V F - Forward Voltage (V)
Fig. 4 - Forward Current vs. Forward Voltage
For technical questions, contact: [email protected]
www.vishay.com
249
TSTA7100
Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant,
875 nm, GaAlAs
1.6
1.1
1.2
IF = 10 mA
I e rel; Φe rel
VF rel - Relative Forward Voltage (V)
1.2
1.0
0.9
I F = 20 mA
0.8
0.4
0.8
0.7
0
20
40
60
80
Tamb - Ambient Temperature (°C)
94 7990
0
- 10 0 10
100
Fig. 5 - Relative Forward Voltage vs. Ambient Temperature
1.25
Φ e - Relative Radiant Power
I e - Radiant Intensity (mW/sr)
100
tp = 10 µs
tp/T = 0.001
1.0
0.75
0.5
0.25
I F = 100 mA
Φ e ( λ ) rel = Φ e ( λ ) / Φ e ( λ p )
1
10 0
94 7958
10 1
10 2
10 3
I F - Forward Current (mA)
0
780
10 4
Fig. 9 - Relative Radiant Power vs. Wavelength
0°
I e rel - Relative Radiant Intensity
1000
100
10
1
980
880
λ - Wavelenght (nm)
94 8000
Fig. 6 - Radiant Intensity vs. Forward Current
Φ e - Radiant Power (mW)
140
100
Fig. 8 - Rel. Radiant Intensity/Power vs. Ambient Temperature
1000
10
50
Tamb - Ambient Temperature (°C)
94 8020
10°
20°
30°
40°
1.0
0.9
50°
0.8
60°
70°
0.7
80°
0.1
10 0
94 7972
10 1
10 2
10 3
I F - Forward Current (mA)
Fig. 7 - Radiant Power vs. Forward Current
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250
0.6
10 4
0.4
0.2
0
0.2
0.4
0.6
94 8019
Fig. 10 - Relative Radiant Intensity vs. Angular Displacement
For technical questions, contact: [email protected]
Document Number: 81044
Rev. 1.7, 04-Sep-08
TSTA7100
Infrared Emitting Diode, RoHS Compliant, Vishay Semiconductors
875 nm, GaAlAs
PACKAGE DIMENSIONS in millimeters
A
2.54 nom.
+ 0.05
- 0.10
6.5
± 0.25
4.7
5.5
± 0.15
C
13.2
± 0.7
(2.5)
CHIP POSITION
0.45
+ 0.02
- 0.05
technical drawings
according to DIN
3.9
LENS
± 0.05
specifications
Drawing-No.: 6.503-5002.01-4
Issue: 2; 24.08.98
96 12174
Document Number: 81044
Rev. 1.7, 04-Sep-08
For technical questions, contact: [email protected]
www.vishay.com
251
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Revision: 02-Oct-12
1
Document Number: 91000