TSTS7100 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs FEATURES • Package type: leaded • Package form: TO-18 • Dimensions (in mm): ∅ 4.7 • Peak wavelength: λp = 950 nm • High reliability • High radiant power • High radiant intensity • Angle of half intensity: ϕ = ± 5° • Low forward voltage 94 8483 • Suitable for high pulse current operation • Good spectral matching with Si photodetectors DESCRIPTION • Lead (Pb)-free component in accordance RoHS 2002/95/EC and WEEE 2002/96/EC TSTS7100 is an infrared, 950 nm emitting diode in GaAs technology in a hermetically sealed TO-18 package with lens. APPLICATIONS with • Radiation source in near infrared range PRODUCT SUMMARY COMPONENT Ie (mW/sr) ϕ (deg) λP (nm) tr (ns) > 10 ±5 950 800 TSTS7100 Note Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM Bulk MOQ: 1000 pcs, 1000 pcs/bulk TO-18 TSTS7100 Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE VR 5 V Tcase ≤ 25 °C IF 250 mA Peak forward current tp/T = 0.5, tp ≤ 100 µs, Tcase ≤ 25 °C IFM 500 mA Surge forward current tp ≤ 100 µs IFSM 2.5 A PV 170 mW PV 500 mW Tj 100 °C Tstg - 55 to + 100 °C Reverse voltage Forward current Power dissipation Tcase ≤ 25 °C Junction temperature Storage temperature range UNIT Thermal resistance junction/ambient leads not soldered RthJA 450 K/W Thermal resistance junction/case leads not soldered RthJC 150 K/W Note Tamb = 25 °C, unless otherwise specified www.vishay.com 260 For technical questions, contact: [email protected] Document Number: 81047 Rev. 1.8, 04-Sep-08 TSTS7100 Infrared Emitting Diode, RoHS Compliant, Vishay Semiconductors 950 nm, GaAs 300 R thJC 500 IF - Forward Current (mA) PV - Power Dissipation (mW) 600 400 300 200 R thJA 250 200 RthJC 150 RthJA 100 50 100 0 0 0 25 50 75 100 125 0 Tamb - Ambient Temperature (°C) 12790 20 Fig. 1 - Power Dissipation Limit vs. Ambient Temperature 40 60 100 80 Tamb - Ambient Temperature (°C) 94 8018 Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL TYP. MAX. IF = 100 mA, tp ≤ 20 ms VF 1.3 1.7 IF = 100 mA TKVF - 1.3 mV/K IR = 100 µA V(BR) VR = 0 V, f = 1 MHz, E = 0 Cj 30 pF Forward voltage Temperature coefficient of VF Breakdown voltage Junction capacitance MIN. UNIT V 5 V Radiant intensity IF = 100 mA, tp = 20 ms Ie Radiant power IF = 100 mA, tp ≤ 20 ms φe 7 mW IF = 100 mA TKφe - 0.8 %/K ϕ ±5 deg Peak wavelength IF = 100 mA λp 950 nm Spectral bandwidth IF = 100 mA Δλ 50 nm IF = 100 mA tr 800 ns IF = 1.5 A, tp/T = 0.01, tp ≤ 10 µs tr 400 ns d 1.5 mm Temperature coefficient of φe Angle of half intensity Rise time Virtual source diameter 10 50 mW/sr Note Tamb = 25 °C, unless otherwise specified BASIC CHARACTERISTICS Tamb = 25 °C, unless otherwise specified 10 4 I F - Forward Current (mA) IF - Forward Current (A) 10 1 I FSM = 2.5 A (single pause) t p /T= 0.01 10 0 0.05 0.1 0.2 10 3 10 2 10 1 10 0 0.5 10 -1 10 -2 94 8003 10 -1 10 -1 10 0 10 1 t p - Pulse Duration (ms) 10 2 Fig. 3 - Pulse Forward Current vs. Pulse Duration Document Number: 81047 Rev. 1.8, 04-Sep-08 94 7996 0 1 2 3 4 V F - Forward Voltage (V) Fig. 4 - Forward Current vs. Forward Voltage For technical questions, contact: [email protected] www.vishay.com 261 TSTS7100 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs 1.6 1.1 1.2 IF = 10 mA Ie rel; Φe rel VF rel - Relative Forward Voltage (V) 1.2 1.0 0.9 IF = 20 mA 0.8 0.4 0.8 0.7 0 20 40 60 80 Tamb - Ambient Temperature (°C) 94 7990 0 - 10 0 10 100 Fig. 5 - Relative Forward Voltage vs. Ambient Temperature 1.25 Φe rel - Relative Radiant Power I e - Radiant Intensity (mW/sr) 100 10 1 t p /T = 0.01 , t p = 20 µs 1.0 0.75 0.5 0.25 IF = 100 mA 0 900 0.1 10 0 10 1 10 2 10 3 I F - Forward Current (mA) 10 4 Fig. 9 - Relative Radiant Power vs. Wavelength 0° I e rel - Relative Radiant Intensity 1000 100 10 1 1000 950 λ - Wavelength (nm) 94 7994 Fig. 6 - Radiant Intensity vs. Forward Current Φe - Radiant Power (mW) 140 100 Fig. 8 - Rel. Radiant Intensity/Power vs. Ambient Temperature 1000 94 8001 50 T amb - Ambient Temperature (°C) 94 7993 10° 20° 30° 40° 1.0 0.9 50° 0.8 60° 70° 0.7 80° 0.1 10 0 94 7977 10 1 10 2 10 3 I F - Forward Current (mA) Fig. 7 - Radiant Power vs. Forward Current www.vishay.com 262 0.6 10 4 0.4 0.2 0 0.2 0.4 0.6 94 8019 Fig. 10 - Relative Radiant Intensity vs. Angular Displacement For technical questions, contact: [email protected] Document Number: 81047 Rev. 1.8, 04-Sep-08 TSTS7100 Infrared Emitting Diode, RoHS Compliant, Vishay Semiconductors 950 nm, GaAs PACKAGE DIMENSIONS in millimeters C ± 0.15 A + 0.05 - 0.10 6.5 ± 0.25 4.7 5.5 2.54 nom. 13.2 ± 0.7 (2.5) Chip position 0.45 + 0.02 - 0.05 3.9 Lens ± 0.05 technical drawings according to DIN specifications Drawing-No.: 6.503-5002.02-4 Issue: 1; 24.08.98 14486 Document Number: 81047 Rev. 1.8, 04-Sep-08 For technical questions, contact: [email protected] www.vishay.com 263 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000