CQY36N Datasheet

CQY36N
Vishay Semiconductors
Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs
FEATURES
• Package type: leaded
• Package form: T-¾
• Dimensions (in mm): Ø 1.8
• Peak wavelength: p = 950 nm
• High reliability
• Angle of half intensity:  = ± 55°
• Low forward voltage
• Suitable for high pulse current operation
• Good spectral matching with Si photodetectors
94 8638
• Package matches with detector BPW16N
• Compliant to RoHS Directive 2002/95/EC and in
accordance with WEEE 2002/96/EC
DESCRIPTION
CQY36N is an infrared, 950 nm emitting diode in GaAs
technology molded in a miniature, clear plastic package
without lens.
APPLICATIONS
• Radiation source in near infrared range
PRODUCT SUMMARY
COMPONENT
Ie (mW/sr)
 (deg)
P (nm)
tr (ns)
1.5
± 55
950
800
CQY36N
Note
• Test conditions see table “Basic Characteristics“
ORDERING INFORMATION
ORDERING CODE
CQY36N
PACKAGING
REMARKS
PACKAGE FORM
Bulk
MOQ: 5000 pcs, 5000 pcs/bulk
T-¾
Note
• MOQ: minimum order quantity
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
SYMBOL
VALUE
Reverse voltage
TEST CONDITION
VR
5
V
Forward current
IF
100
mA
tp  100 μs
Surge forward current
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
Document Number: 81001
Rev. 1.8, 16-May-11
UNIT
IFSM
2
A
PV
160
mW
Tj
100
°C
Tamb
- 25 to + 85
°C
°C
Tstg
- 25 to + 100
t3s
Tsd
245
°C
leads not soldered
RthJA
450
K/W
For technical questions, contact: [email protected]
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
CQY36N
Infrared Emitting Diode, RoHS
Compliant, 950 nm, GaAs
Vishay Semiconductors
120
160
IF - Forward Current (mA)
PV - Power Dissipation (mW)
180
140
120
100
RthJA = 450 K/W
80
60
40
100
80
60
RthJA = 450 K/W
40
20
20
0
0
0
10
20 30
40
50
60
70 80
90
100
0
Tamb - Ambient Temperature (°C)
21319
10
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
20 30 40
50 60 70 80
90 100
Tamb - Ambient Temperature (°C)
21320
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Forward voltage
SYMBOL
MIN.
TYP.
MAX.
1.6
IF = 50 mA, tp  20 ms
VF
1.3
IF = 100 mA
TKVF
- 1.3
Temperature coefficient of VF
Breakdown voltage
UNIT
V
mV/K
IR = 100 μA
V(BR)
VR = 0 V, f = 1 MHz, E = 0
Cj
Radiant intensity
IF = 50 mA, tp  20 ms
Ie
Radiant power
IF = 50 mA, tp  20 ms
e
10
mW
IF = 50 mA
TKe
- 0.8
%/K

± 55
deg
Junction capacitance
Temperature coefficient of e
Angle of half intensity
5
μA
50
0.7
pF
1.5
2.1
mW/sr
Peak wavelength
IF = 50 mA
p
950
nm
Spectral bandwidth
IF = 50 mA

50
nm
IF = 100 mA
tr
800
ns
IF = 1.5 A, tp/T = 0.01, tp 10 μs
tr
400
ns
d
1.2
mm
Rise time
Virtual source diameter
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
1.2
VF rel - Relative Forward Voltage (V)
I F - Forward Current (mA)
10 4
10 3
10 2
10 1
10 0
10 -1
94 7996
IF = 10 mA
1.0
0.9
0.8
0.7
0
1
2
3
4
V F - Forward Voltage (V)
Fig. 3 - Forward Current vs. Forward Voltage
www.vishay.com
2
1.1
0
94 7990
20
40
60
80
100
Tamb - Ambient Temperature (°C)
Fig. 4 - Relative Forward Voltage vs. Ambient Temperature
For technical questions, contact: [email protected]
Document Number: 81001
Rev. 1.8, 16-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
CQY36N
Infrared Emitting Diode, RoHS
Compliant, 950 nm, GaAs
1.25
Φe rel - Relative Radiant Power
100
I e – Radiant Intensity (mW/sr)
Vishay Semiconductors
10
1
1.0
0.75
0.5
0.25
IF = 100 mA
0.1
100
101
102
103
I F – Forward Current (mA)
94 7917
0
900
104
94 7994
Fig. 5 - Radiant Intensity vs. Forward Current
Fig. 8 - Relative Radiant Power vs. Wavelength
I e rel – Relative Radiant Intensity
0°
Φ e - Radiant Power (mW)
100
10
1
1000
950
λ - Wavelength (nm)
10
°
20
°
30°
40°
1.0
0.9
50°
0.8
60°
70°
0.7
80°
0.1
1
10
100
1000
I F - Forward Current (mA)
13718
0.6
0.4
0.2
0
0.2
0.4
0.6
94 7919
Fig. 6 - Radiant Power vs. Forward Current
Fig. 9 - Relative Radiant Intensity vs. Angular Displacement
1.6
Ie rel; Φe rel
1.2
IF = 20 mA
0.8
0.4
0
- 10 0 10
94 7993
50
100
140
T amb - Ambient Temperature (°C)
Fig. 7 - Relative Radiant Intensity/Power vs. Ambient Temperature
Document Number: 81001
Rev. 1.8, 16-May-11
For technical questions, contact: [email protected]
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
CQY36N
Vishay Semiconductors
Infrared Emitting Diode, RoHS
Compliant, 950 nm, GaAs
PACKAGE DIMENSIONS in millimeters
Drawing-No.: 6.544-5053.01-4
Issue: 1; 01.07.96
96 12189
www.vishay.com
4
For technical questions, contact: [email protected]
Document Number: 81001
Rev. 1.8, 16-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
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of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
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Revision: 02-Oct-12
1
Document Number: 91000
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