2579

NTE2579
Silicon NPN Transistor
High Voltage, High Speed Switch
Features:
D Fast Switching Speed
D Low Saturation Voltage
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7A
Pulse . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Collector Dissipation (TC = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Rqange, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ Max Unit
Collector Cutoff Current
ICBO
VCB = 250V, IE = 0
–
–
100
µA
Emitter Cutoff Current
IEBO
VEB = 5V, IC = 0
–
–
100
µA
DC Current Gain
hFE
VCE = 1V, IC = 1A
15
–
–
VCE = 1V, IC = 5A
10
–
50
VCE = 10V, IC = 500mA
10
40
–
MHz
Gain–Bandwidth Product
fT
Collector–Emitter Saturation Voltage
VCE(sat)
IC = 5A, IB = 500mA
–
–
0.8
V
Base–Emitter Saturation Voltage
VBE(sat)
IC = 5A, IB = 500mA
–
–
1.5
V
Collector–Base Breakdown Voltage
V(BR)CBO IC = 1A, IE = 0
400
–
–
V
Collector–Emitter Breakdown Voltage
V(BR)CEO IC = 1mA, RBE = ∞
200
–
–
V
Emitter–Base Breakdown Voltage
V(BR)EBO IE = 1mA, IC = 0
6
–
–
V
–
–
0.3
µs
Fall Time
tf
VCC = 50V, IC = 5A,
IB1 = –IB2 = 500mA,
Pulse Width = 20µs,
Duty Cycle ≤ 1%
.420 (10.67)
Max
.110 (2.79)
.147 (3.75)
Dia Max
.500
(12.7)
Max
.250 (6.35)
Max
.500
(12.7)
Min
.070 (1.78) Max
Base
.100 (2.54)
Emitter
Collector/Tab