198

NTE198
Silicon NPN Transistor
High Voltage Power Transistor
Description:
The NTE198 is a high voltage silicon NPN power transistor in a TO220 type package designed for
use as a line operated audio output amplifier, switchmode power supply driver, and other switchmode
applications.
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V
Emitter–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mA
Total Power Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W
Derate above +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.016W/°C
Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40W
Derate above +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.32W/°C
Unclamped Inducting Load Energy, E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mJ
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.125°C/W
Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62.5°C/W
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
400
–
–
V
OFF Characteristics
Collector–Emitter Sustaining Voltage VCEO(sus) IC = 30mA, IB = 0, Note 1
Collector Cutoff Current
Emitter Cutoff Current
ICEO
VCE = 300V, IB = 0
–
–
1
mA
ICES
VCE = 500V, VBE = 0
–
–
1
mA
IEBO
VBE = 5V, IC = 0
–
–
1
mA
Note 1. Pulse test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
VCE = 10V, IC = 0.3A
30
–
150
VCE = 10V, IC = 1A
10
–
–
Unit
ON Characteristics (Note 1)
DC Current Gain
hFE
Collector–Emitter Saturation Voltage
VCE(sat)
IC = 1A, IB = 0.2A
–
–
1.0
V
Base–Emitter ON Voltage
VBE(on)
VCE = 10V, IC = 1A
–
–
1.5
V
MHz
Dynamic Characteristics
Current Gain–Bandwidth Product
fT
VCE = 10V, IC = 0.2A, f = 2MHz
10
–
–
Small–Signal Current Gain
hfe
VCE = 10V, IC = 0.2A, f = 1kHz
25
–
–
Note 1. Pulse test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
.420 (10.67)
Max
.110 (2.79)
.147 (3.75)
Dia Max
.500
(12.7)
Max
.250 (6.35)
Max
.500
(12.7)
Min
.070 (1.78) Max
Base
.100 (2.54)
Emitter
Collector/Tab