51

NTE51
Silicon NPN Transistor
High Voltage, High Speed Switch
Description:
The NTE51 is a silicon NPN transistor in a TO220 type package designed for high–voltage, high–
speed power switching inductive circuits where fall time is critical. This device is particularly suited
for 115V and 220V SWITCHMODE applications such as switching regulators, Inverters, motor controls, solenoid/relay drivers and deflection circuits.
Features:
D Reverse Bias SOA with Inductive Loads @ TC = +100°C
D 700V Blocking Capability
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO(sus) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
Collector–Emitter Voltage, VCEV . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700V
Emitter Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9V
Collector Current,IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
Base Current, IB
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Emitter Current, IE
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A
Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A
Total Power Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W
Derate above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16mW/°C
Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75W
Derate above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mW/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.67°C/W
Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62.5°C/W
Lead Temperature (During Soldering, 1/8” from case, 5sec), TL . . . . . . . . . . . . . . . . . . . . . . . +275°C
Electrical Characteristics: (TC = +25°C unless otherwise Specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max Unit
400
–
–
V
VCEV = 700V, VBE(off) = 1.5V
–
–
1
mA
VCEV = 700V, VBE(off) = 1.5V,
TC = +100°C
–
–
1
mA
VEB = 9V, Ic = 0
–
–
1
mA
OFF Characteristics (Note 1)
Collector–Emitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
VCEO(sus) Ic = 10mA, IB = 0
ICEV
IEBO
Note 1. Pulse test: Pulse Width = 300µs, Duty Cycle = 2%.
Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise Specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max Unit
VCE = 5V, IC = 1A
10
–
VCE = 5V, IC = 2A
8
–
40
IC = 1A, IB = 0.2A
–
–
0.5
V
IC = 2A, IB = 0.5A
–
–
0.6
V
IC = 2A, IB = 0.5A, TC = +100°C
–
–
1.0
V
IC = 4A, IB = 1A
–
–
1.0
V
VCE = 10V, IC = 500mA, f = 1MHz
4
–
–
MHz
VCB = 10V, IE = 0, f = 0.1MHz
–
65
–
pF
VCC = 125V, IC = 2A, IB1 = IB2 = 0.4A,
tp = 25µs,
µ Duty Cycle ≤ 1%
–
0.025
0.1
µs
–
0.3
0.7
µs
ON Characteristics (Note 1)
DC Current Gain
hFE
Collector–Emitter Saturation Voltage
VCE(sat)
60
Dynamics Characteristics
Current Gain–Bandwidth Product
Output Capacitance
fT
Cob
Switching Characteristics (Resistive Load)
Delay Time
td
Rise Time
tr
Storage Time
ts
–
1.7
4.0
µs
Fall Time
tf
–
0.4
0.9
µs
–
0.9
4.0
µs
–
0.32
0.9
µs
–
0.16
–
µs
Switching Characteristics (Inductive Load, Clamped)
Voltage Storage Time
tsv
Crossover Time
tc
Fall Time
tfi
Vclamp = 300V, IB1 = 0.4A,
VBE(off) = 5V
Note 1. Pulse test: Pulse Width = 300µs, Duty Cycle = 2%.
.420 (10.67)
Max
.110 (2.79)
.500
(12.7)
Max
.147 (3.75)
Dia Max
.250 (6.35)
Max
.500
(12.7)
Min
.070 (1.78) Max
Base
.100 (2.54)
Emitter
Collector/Tab
Similar pages
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