2325

NTE2325
Silicon NPN Transistor
High Voltage Switch
Features:
D High Reverse Voltage: VCBO = 900V (Max)
D High Speed Switching: tf = 0.7µs (Max)
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A
Peak Collector Current (Note 1), icp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5A
Collector Power Dissipation (TC = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 10%
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max Unit
OFF Characteristics
Collector–Base Breakdown Voltage
V(BR)CBO
IC = 1mA, IE = 0
900
–
–
V
Collector–Emitter Breakdown Voltage
V(BR)CEO
IC = 5mA, RBE = ∞
800
–
–
V
Emitter–Base Breakdown Voltage
V(BR)EBO
IE = 1mA, IC = 0
7
–
–
V
Collector Cutoff Current
ICBO
VCB = 800V, IE = 0
–
–
10
µA
Emitter Cutoff Current
IEBO
VEB = 5V, IC = 0
–
–
10
µA
800
–
–
V
VCEX(sus)1 IC = 1A, IB1 = 200mA, IB2 = –200mA,
L = 2mH, Clamped
800
–
–
V
VCEX(sus)2 IC = 500mA, IB1 = 100mA, IB2 = –100mA,
L = 5mH, Clamped
900
–
–
V
Collector–Emitter Sustaining Voltage
VCEO(sus)
IC = 3A, L = 500µH, IB = 1A
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max Unit
ON Characteristics
DC Current Gain
hFE1
VCE = 5V, IC = 200mA
10
–
–
hFE2
VCE = 5V, IC = 1A
8
–
–
Collector–Emitter Saturation Voltage
VCE(sat)
IC = 1.5A, IB = 300mA
–
–
2.0
V
Base–Emitter Saturation Voltage
VBE(sat)
IC = 1.5A, IB = 300mA
–
–
1.5
V
fT
VCE = 10V, IC = 200mA
–
15
–
MHz
Cob
VCB = 10V, f = 1MHz
–
60
–
pF
Turn–On Time
ton
–
1.0
–
µs
Storage Time
tstg
IC = 2A, IB1 = 400mA, IB2 = 800mA,
RL = 200Ω,
Ω VCC = 400V
–
3.0
–
µs
–
0.7
–
µs
Dynamic Characteristics
Current Gain–Bandwidth Product
Output Capactiance
Switching Characteristics
Fall Time
tf
.420 (10.67)
Max
.110 (2.79)
.147 (3.75)
Dia Max
.500
(12.7)
Max
.250 (6.35)
Max
.500
(12.7)
Min
.070 (1.78) Max
Base
.100 (2.54)
Emitter
Collector/Tab