2333

NTE2333
Silicon NPN Power Transistor
for Switching Power Applications
Description:
The NTE2333 is a silicon NPN Power Transistor in a TO220 package designed for use in 220V line–
operated Switchmode Power supplies and electronic light ballasts.
Features:
D Improved Efficiency Due to Low Base Drive Requirements:
High and Flat DC Current Gain hFE
Fast Switching
No Coil Required in Base Circuit for Turn–Off (No Current Tail)
Absolute Maximum Ratings:
Collector–Emitter Sustaining Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450V
Collector–Emitter Breakdown Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A
Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A
Base Current, IB
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W
Derate above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.8W/°C
Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Maximum Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.25°C/W
Maximum Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . 62.5°C/W
Maximum Lead Temperature (During Soldering, 1/8” from Case for 5sec), TL . . . . . . . . . . . +260°C
Note 1. Pulse Test: Pulse Width = 5ms, Duty Cycle ≤ 10%.
Note 2. Proper strike and creepage distance must be provided.
Electrical Characteristics: (TC = +25°C, unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
450
–
–
V
OFF Characteristics
Collector–Emitter Sustaining Voltage
VCEO(sus IC = 100mA, L = 25mH
)
Collector Cutoff Current
Emitter Cutoff Current
ICEO
VCE = 450V, IB = 0
–
–
100
µA
ICES
VCE = 1000V, VEB = 0
–
–
100
µA
VCE = 1000V, VEB = 0, TC = +125°C
–
–
500
µA
VCE = 800V, VEB = 0, TC = +125°C
–
–
100
µA
VEB = 9V, IC = 0
–
–
100
µA
IC = 1.3A, IB = 0.13A
–
0.83
1.2
V
IC = 3A, IB = 0.6A
–
0.94
1.3
V
IC = 1.3A, IB = 0.13A
–
0.25
0.6
V
–
0.27
0.65
V
–
0.35
0.7
V
–
0.4
0.8
V
14
–
34
–
32
–
6
10
–
TC = +125°C
5
8
–
TC = +25°C
to +125°C
°
11
17
–
10
22
–
IC = 0.5A, VCE = 10V, f = 1MHz
–
14
–
MHz
75
120
pF
1000 1500
pF
IEBO
ON Characteristics
Base–Emitter Saturation Voltage
Collector–Emitter Saturation Voltage
VBE(sat)
VCE(sat)
TC = +125°C
IC = 3A, IB = 0.6A
TC = +125°C
DC Current Gain
hFE
IC = 0.5A, VCE = 5V
TC = +125°C
IC = 3A, VCE = 1V
IC = 1.3A, VCE = 1V
IC = 10mA, VCE = 5V
V
Dynamic Characteristics
Current Gain Bandwidth Product
fT
Output Capacitance
Cob
VCB = 10V, IB = 0, f = 1MHz
–
Input Capacitance
Cib
VEB = 8V
–
VCE(dsat)
Dynamic Saturation Voltage:
Determined 1µs and 3µs respectively
after rising IB1 reaches 90% of final
IB1
–
5.5
–
V
–
12.0
–
V
–
3.0
–
V
–
7.0
–
V
–
9.5
–
V
–
14.5
–
V
–
2.0
–
V
–
7.5
–
V
–
90
180
ns
–
100
–
ns
–
1.7
2.5
µs
TC = +125°C
–
2.1
–
µs
IC = 1.3A, IB1 = 130mA,
IB2 = 650mA,
TC = +125°C
VCC = 300V
–
200
300
ns
–
130
–
ns
–
1.2
2.5
µs
TC = +125°C
–
1.5
–
µs
IC = 1.3A,
IB1 = 130mA,
VCC = 300V
1µs
TC = +125°C
3µs
TC = +125°C
IC = 3.0A,
IB1 = 600mA,
VCC = 300V
1µs
TC = +125°C
3µs
TC = +125°C
Switching Characteristics: Resistive Load (DC ≤ 10%, Pulse Width = 20µs)
Turn–On Time
Turn–Off Time
Turn–On Time
Turn–Off Time
ton
IC = 3A, IB1 = 600mA,
IB2 = 1.5A, VCC = 300V
TC = +125°C
toff
ton
toff
Electrical Characteristics (Cont’d): (TC = +25°C, unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
–
100
180
ns
–
120
–
ns
–
1.5
2.5
µs
–
1.9
–
µs
–
220
350
ns
–
230
–
ns
–
85
150
ns
–
120
–
ns
–
2.15
3.2
µs
–
2.75
–
µs
–
200
300
ns
–
310
–
ns
Switching Characteristics: Inductive Load (Vclamp = 300V, VCC = 15V, l = 200µH)
Fall Time
tfi
Storage Time
IC = 1.5A, IB1 = 130mA,
IB2 = 650mA
TC = +125°C
tsi
TC = +125°C
Crossover Time
tc
TC = +125°C
Fall Time
tfi
Storage Time
IC = 3A, IB1 = 600mA,
IB2 = 1.5A
TC = +125°C
tsi
TC = +125°C
Crossover Time
tc
TC = +125°C
.420 (10.67)
Max
.110 (2.79)
.147 (3.75)
Dia Max
.500
(12.7)
Max
.250 (6.35)
Max
.500
(12.7)
Min
.070 (1.78) Max
Base
.100 (2.54)
Emitter
Collector/Tab
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