2303

NTE2303
Silicon NPN Transistor
Horizontal Deflection
Description:
The NTE2303 is a silicon NPN transistor in a TO220 type package designed for use in small screen
black and white deflection circuits.
Features:
D Collector–Emitter Voltage: VCEX = 1500V
D Glassivated Base–Collector Junction
D Switching Times with Inductive Loads: tf = 0.65µs (Typ) @ IC = 2A
Maximum Ratings:
Collector–Emitter Voltage, VCEO(sus) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 750V
Collector–Emitter Voltage, VCEX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5A
Continuous Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0A
Continuous Emitter Current, IE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.5A
Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65W
Derate above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.65W/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +125°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +125°C
Maximum Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.54°C/W
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max Unit
750
–
–
V
OFF Characteristics (Note 1)
Collector–Emitter Sustaining Voltage
VCEO(sus) IC = 50mA, IB = 0
Collector Cutoff Current
ICES
VCE = 1500V, VBE = 0
–
–
1.0
mA
Emitter Cutoff Current
IEBO
VEB = 5V, IC = 0
–
–
0.1
mA
ON Characteristics (Note 1)
Collector–Emitter Saturation Voltage
VCE(sat)
IC = 2A, IB = 660mA
–
–
5.0
V
Base–Emitter Saturation Voltage
VBE(sat)
IC = 2A, IB = 660mA
–
–
1.5
V
Note 1 Pulse Test: Pulse Width ≤ 300µs, Duty Cycle = 2%.
Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max Unit
VCB = 10V, IE = 0, f = 0.1MHz
–
50
–
pF
fT
VCE = 5V, Ic = 100mA, ftest = 1MHz, Note 1
–
4.0
–
MHz
tf
IC = 2A, IB1 = 600mA, LB = 12µH
–
0.65
–
µs
Dynamic Characteristics
Output Capacitance
Cob
Current Gain–Bandwidth Product
Switching Characteristics
Fall Time
Note 1 Pulse Test: Pulse Width ≤ 300µs, Duty Cycle = 2%.
.420 (10.67)
Max
.110 (2.79)
.147 (3.75)
Dia Max
.500
(12.7)
Max
.250 (6.35)
Max
.500
(12.7)
Min
.070 (1.78) Max
Base
.100 (2.54)
Emitter
Collector/Tab