RHRG50100 Data Sheet January 2000 File Number 3106.3 50A, 1000V Hyperfast Diode Features The RHRG50100 is a hyperfast diode with soft recovery characteristics (trr < 75ns). It has half the recovery time of ultrafast diodes and is of silicon nitride passivated ion-implanted epitaxial planar construction. • Hyperfast with Soft Recovery . . . . . . . . . . . . . . . . . . <75ns This device is intended for use as a freewheeling/clamping diode and rectifier in a variety of switching power supplies and other power switching applications. Its low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits, thus reducing power loss in the switching transistors. • Avalanche Energy Rated • Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . .1000V • Planar Construction Applications • Switching Power Supplies • Power Switching Circuits Formerly developmental type TA49066. • General Purpose Ordering Information PART NUMBER • Operating Temperature. . . . . . . . . . . . . . . . . . . . . . .175oC PACKAGE BRAND Packaging JEDEC STYLE TO-247 RHRG50100 TO-247 RHRG50100 ANODE NOTE: When ordering, use the entire part number. Symbol CATHODE (BOTTOM SIDE METAL) CATHODE K A Absolute Maximum Ratings TC = 25oC RHRG50100 UNITS Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VRRM 1000 V Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRWM 1000 V DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VR Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IF(AV) (TC = 60oC) 1000 V 50 A Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFRM (Square Wave, 20kHz) 100 A Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IFSM (Halfwave, 1 Phase, 60Hz) 500 A Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 150 W Avalanche Energy (See Figures 7 and 8) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAVL 40 mJ Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TSTG, TJ -65 to 175 oC 1 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000 RHRG50100 TC = 25oC, Unless Otherwise Specified Electrical Specifications SYMBOL TEST CONDITION MIN TYP MAX UNITS IF = 50A - - 3.0 V IF = 50A, TC = 150oC - - 2.5 V VR = 1000V - - 250 µA VR = 1000V, TC = 150oC - - 3.0 mA IF = 1A, dIF/dt = 100A/µs - - 75 ns IF = 50A, dIF/dt = 100A/µs - - 95 ns ta IF = 50A, dIF/dt = 100A/µs - 54 - ns tb IF = 50A, dIF/dt = 100A/µs - 32 - ns - - 1.0 oC/W VF IR trr RθJC DEFINITIONS VF = Instantaneous forward voltage (pw = 300µs, D = 2%). IR = Instantaneous reverse current. trr = Reverse recovery time (See Figure 6), summation of ta + tb. ta = Time to reach peak reverse current (See Figure 6). tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 6). RθJC = Thermal resistance junction to case. pw = Pulse width. D = Duty cycle. Typical Performance Curves 3000 150 IR , REVERSE CURRENT (µA) IF, FORWARD CURRENT (A) 175oC 1000 175oC 100 100oC 10 25oC 100 100oC 10 1 25oC 0.1 0.01 1 0 0.5 1 1.5 2 2.5 3 3.5 VF, FORWARD VOLTAGE (V) FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE 2 0 200 400 600 800 1000 VR , REVERSE VOLTAGE (V) FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE RHRG50100 Typical Performance Curves IF(AV) , AVERAGE FORWARD CURRENT (A) (Continued) 100 t, RECOVERY TIMES (ns) TC = 25oC, dIF/dt = 100A/µs trr 80 60 ta 40 tb 20 0 1 10 50 DC 40 30 SQ. WAVE 20 10 50 0 25 50 75 100 125 150 175 TC , CASE TEMPERATURE (oC) IF, FORWARD CURRENT (A) FIGURE 3. trr, ta AND tb CURVES vs FORWARD CURRENT FIGURE 4. CURRENT DERATING CURVE Test Circuits and Waveforms VGE AMPLITUDE AND RG CONTROL dIF/dt t1 AND t2 CONTROL IF L DUT CURRENT SENSE RG IF + VGE - IGBT t1 VDD dIF trr dt ta tb 0 0.25 IRM t2 IRM FIGURE 5. trr TEST CIRCUIT FIGURE 6. trr WAVEFORMS AND DEFINITIONS IMAX = 1.4A L = 40mH R < 0.1Ω EAVL = 1/2LI2 [VR(AVL) /(VR(AVL) - VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) VAVL L CURRENT SENSE R + VDD IL IL I V Q1 VDD DUT t0 FIGURE 7. AVALANCHE ENERGY TEST CIRCUIT t1 t2 t FIGURE 8. AVALANCHE CURRENT AND VOLTAGE WAVEFORMS All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. 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