T163VU Datasheet

T163VU
www.vishay.com
Vishay Semiconductors
Infrared Emitting Diode Chip, 950 nm, GaAs
FEATURES
• Package type: chip
• Package form: single chip
• Dimensions (L x W x H in mm):
0.37 x 0.37 x 0.265
• Peak wavelength: λp = 950 nm
• High reliability
• Low forward voltage
• Suitable for high pulse current operation
• Good spectral matching with Si photodetectors
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
21642
DESCRIPTION
APPLICATIONS
T163VU is an infrared, 950 nm emitting diode chip in GaAs
technology. Anode is the bond pad on top.
• Emitter in photo interrupters
GERNEAL INFORMATION
The datasheet is based on Vishay optoelectronics sample testing under certain predetermined and assumed conditions, and is
provided for illustration purpose only. Customers are encouraged to perform testing in actual proposed packaged and used
conditions. Vishay optoelectronics die products are tested using Vishay optoelectronics based quality assurance procedures
and are manufactured using Vishay optoelectronics established processes. Estimates such as those described and set forth in
this datasheet for semiconductor die will vary depending on a number of packaging, handling, use, and other factors. Therefore
sold die may not perform on an equivalent basis to standard package products.
PRODUCT SUMMARY
COMPONENT
φe (mW)
Ie (mW/sr)
ϕ (deg)
λp (nm)
tr (ns)
22
1.2
n/a
950
800
T163VU
Note
• Test condition see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE
T163VU-SF-F
PACKAGING
REMARKS
PACKAGE FORM
wafer sawn on foil without any frame
MOQ: 25 000 pcs
chip
Note
• MOQ: minimum order quantity
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
SYMBOL
VALUE
UNIT
Forward current
IF
100
mA
Reverse voltage
VR
5
V
Surge forward current
Junction temperature
TEST CONDITION
tp = 100 μs
IFSM
1.5
A
Tj
125
°C
Operating temperature range
Tamb
-40 to +100
°C
Storage temperature range
Tstg1
-40 to +100
°C
Storage temperature range on foil
Tstg2
-40 to +50
°C
Rev. 1.4, 28-Jul-14
Document Number: 81133
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
T163VU
www.vishay.com
Vishay Semiconductors
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Forward voltage
TEST CONDITION
SYMBOL
IF = 100 mA, tp = 20 ms
VF
TYP.
MAX.
UNIT
1.3
V
IF = 1 A, tp = 100 μs
VF
1.8
V
IF = 100 mA
TKVF
-1.3
mV/K
VR = 0 V, f = 1 MHz, E = 0
Cj
30
pF
IF = 100 mA, TO-18 gold header assembly
Ie
1.2
mW/sr
Temperature coefficient of VF
Junction capacitance
Radiant intensity
MIN.
Radiant power (epoxy encapsulated)
IF = 100 mA
φe
22
mW
Temperature coefficient of φe
IF = 100 mA
TKφe
-0.8
%/K
Peak wavelength
IF = 100 mA
λp
950
nm
Spectral bandwidth
IF = 100 mA
λ0.5
50
nm
Temperature coefficient of λp
IF = 100 mA
TKλp
0.2
nm/K
IF = 20 mA
tr, tf
800
ns
IF = 1 A
tr, tf
400
ns
Rise time, fall time
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
1.6
10 3
1.2
Ie rel; Φe rel
I F - Forward Current (mA)
10 4
10 2
10 1
0.8
0.4
10 0
10 -1
0
1
2
3
0
-10 0 10
4
V F - Forward Voltage (V)
94 7996
94 7993
Fig. 1 - Forward Current vs. Forward Voltage
50
100
140
T amb - Ambient Temperature (°C)
Fig. 3 - Relative Radiant Intensity / Power vs. Ambient Temperature
1.2
1.25
Φe rel - Relative Radiant Power
VF rel - Relative Forward Voltage (V)
IF = 20 mA
1.1
IF = 10 mA
1.0
0.9
0.8
1.0
0.75
0.5
0.25
0
94 7990
20
40
60
80
100
Tamb - Ambient Temperature (°C)
Fig. 2 - Relative Forward Voltage vs. Ambient Temperature
Rev. 1.4, 28-Jul-14
IF = 100 mA
0
900
0.7
94 7994
950
1000
λ - Wavelength (nm)
Fig. 4 - Relative Radiant Power vs. Wavelength
Document Number: 81133
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
T163VU
www.vishay.com
Vishay Semiconductors
MECHANICAL DIMENSIONS
PARAMETER
SYMBOL
Length of chip edge (x-direction)
Lx
MIN.
TYP.
MAX.
0.37
UNIT
mm
Length of chip edge (y-direction)
Ly
0.37
mm
Emission area
AE
0.34 x 0.34
mm2
Die height
H
0.265
mm
Diameter of bondpad
d
0.14
mm
ADDITIONAL INFORMATION
Frontside metallization, anode
aluminum
Backside metallization, cathode
gold alloy
Dicing
Die bonding technology
sawing
epoxy bonding
Note
• All chips are checked in accordance with the Vishay Semiconductor, specification of visual inspection FVOV6870.
The visual inspection shall be made in accordance with the “specification of visual inspection as referenced”. The visual inspection of chip
backside is performed with stereo microscope with incident light and 40x to 80x magnification.
The quality inspection (final visual inspection) is performed by production. An additional visual inspection step as special release procedure
by QM is not installed.
HANDLING AND STORAGE CONDITIONS
• The hermetically sealed shipment lots shall be opened in temperature and moisture controlled cleanroom environment only.
It is mandatory to follow the rules for disposition of material that can be hazardous for humans and environment.
• Product must be handled only at ESD safe workstations. Standard ESD precautions and safe work environments are as
defined in MIL-HDBK-263.
• Singulated die are not to be handled with tweezers. A vacuum wand with non metallic ESD protected tip should be used.
PACKING
Chips are fixed on adhesive foil. Upon request the foils can be mounted on plastic frame or disco frame. For shipment, the
wafers are arranged to stacks and hermetically sealed in plastic bags to ensure protection against environmental influence
(humidity and contamination).
Use for recycling reliable operators only. We can help getting in touch with your nearest sales office. By agreement we will take
back packing material, if it is sorted. You will have to bear the costs of transport. We will invoice you for any costs incurred for
packing material that is returned unsorted or which we are not obliged to accept.
Rev. 1.4, 28-Jul-14
Document Number: 81133
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000