VSLB3948 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW FEATURES • Package type: leaded • Package form: T-1, clear epoxy • Dimensions: Ø 3 mm • High speed • High radiant power • Low forward voltage • Suitable for high pulse current operation • Angle of half intensity: ϕ = ± 22° 94 8488 • Peak wavelength: λp = 940 nm • Good spectral matching to Si photodetectors DESCRIPTION • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 VSLB3948 is a high speed infrared emitting diode in GaAlAs, MQW technology, molded in a clear plastic package. APPLICATIONS • Infrared remote control units PRODUCT SUMMARY COMPONENT Ie (mW/sr) ϕ (deg) λp (nm) tr (ns) 65 ± 22 940 15 VSLB3948 Note • Test conditions see table “Basic Characteristics“ ORDERING INFORMATION ORDERING CODE VSLB3948 PACKAGING REMARKS PACKAGE FORM Bulk MOQ: 5000 pcs, 5000 pcs/bulk T-1 Note • MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) SYMBOL VALUE Reverse voltage PARAMETER TEST CONDITION VR 5 UNIT V Forward current IF 100 mA mA Peak forward current tp/T = 0.1, tp = 100 μs IFM 500 Surge forward current tp = 100 μs IFSM 1 A PV 160 mW °C Power dissipation Junction temperature Tj 100 Operating temperature range Tamb -25 to +85 °C Storage temperature range Tstg -40 to +100 °C t ≤ 5 s, 2 mm from case Tsd 260 °C J-STD-051, leads 7 mm, soldered on PCB RthJA 300 K/W Soldering temperature Thermal resistance junction/ambient Rev. 1.4, 01-Aug-14 Document Number: 81876 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSLB3948 www.vishay.com Vishay Semiconductors 120 160 IF - Forward Current (mA) PV - Power Dissipation (mW) 180 140 120 100 80 RthJA = 300 K/W 60 40 100 80 RthJA = 300 K/W 60 40 20 20 0 0 0 10 21317 20 30 40 50 60 70 80 90 100 0 Tamb - Ambient Temperature (°C) 10 Fig. 1 - Power Dissipation Limit vs. Ambient Temperature 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (°C) 21318 Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Forward voltage Temperature coefficient of VF Reverse current Junction capacitance TEST CONDITION SYMBOL MIN. TYP. MAX. IF = 100 mA, tp = 20 ms VF 1.22 1.42 1.62 IF = 1 mA TKVF VR = 5 V IR VR = 0 V, f = 1 MHz, E = 0 mW/cm2 CJ -1.5 UNIT V mV/K 10 21 μA pF Radiant intensity IF = 100 mA, tp = 20 ms Ie Radiant power IF = 100 mA, tp = 20 ms φe 40 mW IF = 1 mA TKφe -1.1 %/K IF = 100 mA TKφe -0.51 %/K ϕ ± 22 deg Peak wavelength IF = 30 mA λp 940 nm Spectral bandwidth IF = 30 mA Δλ 30 nm Temperature coefficient of lp IF = 30 mA TKλp 0.25 nm Rise time IF = 100 mA, 20 % to 80 % tr 15 ns Fall time IF = 100 mA, 20 % to 80 % tf 15 ns d 2 mm Temperature coefficient of radiant power Angle of half intensity Virtual source diameter Rev. 1.4, 01-Aug-14 32 65 110 mW/sr Document Number: 81876 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSLB3948 www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 100 Φe rel - Relative Radiant Power (%) 100 tp = 100 µs tp/T= 0.001 10 90 70 60 50 40 30 20 10 0 840 1 0 1 21446 2 3 VF - Forward Voltage (V) 880 920 1000 1040 Fig. 6 - Relative Radiant Power vs. Wavelength 110 106 104 102 IF = 100 mA 100 IF = 10 mA 98 tp = 20 ms 96 94 IF = 1 mA 92 Ie rel - Relative Radiant Intensity (%) 180 108 IF = 1 mA 160 140 120 IF = 100 mA 100 90 - 40 - 20 0 20 40 60 80 80 60 tp = 20 ms 40 100 Tamb - Ambient Temperature (°C) 21443 - 60 - 40 - 20 0 20 0° Ie rel - Relative Radiant Intensity 10 tp = 100 µs tp/T= 0.001 60 80 100 Fig. 7 - Relative Radiant Intensity vs. Ambient Temperature 1000 100 40 Tamb - Ambient Temperature (°C) 21444 Fig. 4 - Relative Forward Voltage vs. Ambient Temperature Ie - Radiant Intensity (mW/sr) 960 λ - Wavelength (nm) 21445 Fig. 3 - Forward Current vs. Forward Voltage VF, rel - Relative Forward Voltage (%) IF = 30 mA 80 10° 20° 30° 40° 1.0 50° 0.9 60° 0.8 70° ϕ - Angular Displacement IF - Forward Current (mA) 1000 80° 0.7 1 10 21442 100 1000 21441 0.6 0.4 0.2 0 IF - Forward Current (mA) Fig. 5 - Radiant Intensity vs. Forward Current Rev. 1.4, 01-Aug-14 Fig. 8 - Relative Radiant Intensity vs. Angular Displacement Document Number: 81876 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSLB3948 www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters C Ø 3.2 ± 0.15 A AREA NOT PLANE 5.8 ± 0.3 34.4 ± 0.5 < 0.6 (2.5) 3.4 ± 0.15 4.4 ± 0.3 R1.4 (sphere) Ø 2.9 ± 0.15 2.54 nom. 1.5 ± 0.5 + 0.15 + 0.2 0.5 - 0.1 0.4 - 0.05 technical drawings according to DIN specifications Drawing-No.: 6.544-5255.01-4 Issue: 9; 28.07.14 Rev. 1.4, 01-Aug-14 Document Number: 81876 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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