VSMY1850X01 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diodes, 850 nm, Surface Emitter Technology FEATURES • Package type: surface-mount • Package form: 0805 • Dimensions (L x W x H in mm): 2 x 1.25 x 0.85 • AEC-Q101 qualified • Peak wavelength: λp = 850 Nm • High reliability • High radiant power • High radiant intensity • High speed • Angle of half sensitivity: ϑ = ± 60° • Suitable for high pulse current operation • 0805 standard surface-mountable package • Floor life: 168 h, MSL 3, according to J-STD-020 DESCRIPTION • Lead (Pb)-free reflow soldering As part of the SurfLightTM portfolio, the VSMY1850X01 is an infrared, 850 nm emitting diode based on GaAlAs surface emitter chip technology with high radiant intensity, high optical power and high speed, molded in clear, untinted 0805 plastic package for surface mounting (SMD). • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • IrDA compatible data transmission • Miniature light barrier • Photointerrupters • Optical switch • Emitter source for proximity sensors • IR touch panels • IR flash • IR illumination • 3D TV PRODUCT SUMMARY COMPONENT Ie (mW/sr) ϕ (deg) λp (nm) tr (ns) VSMY1850X01 10 ± 60 850 10 Note • Test conditions see table “Basic Characteristics“ ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VSMY1850X01 Tape and reel MOQ: 3000 pcs, 3000 pcs/reel 0805 Note • MOQ: minimum order quantity Rev. 1.4, 13-Oct-15 Document Number: 83317 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMY1850X01 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT VR 5 V Reverse voltage Forward current IF 100 mA Peak forward current tp/T = 0.1, tp = 100 μs IFM 200 mA Surge forward current tp = 100 μs IFSM 1 A PV 190 mW °C Power dissipation Junction temperature Tj 100 Operating temperature range Tamb -40 to +85 °C Storage temperature range Tstg -40 to +100 °C According to figure 7, J-STD-020 Tsd 260 °C J-STD-051, leads 7 mm, soldered on PCB RthJA 270 K/W Soldering temperature Thermal resistance junction / ambient 120 100 IF - Forward Current (mA) PV - Power Dissipation (mW) 200 160 120 RthJA = 270 K/W 80 40 80 60 RthJA = 270 K/W 40 20 0 0 0 22108 20 40 60 80 0 100 Tamb - Ambient Temperature (°C) 20 Fig. 1 - Power Dissipation Limit vs. Ambient Temperature 40 60 80 100 Tamb - Ambient Temperature (°C) 22109 Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Forward voltage Temperature coefficient of VF TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT IF = 100 mA, tp = 20 ms VF - 1.65 1.9 V IF = 1 A, tp = 100 μs VF - 2.9 - V IF = 1 mA TKVF - -1.4 - mV/K IF = 10 mA TKVF - -1.18 - mV/K Reverse current Junction capacitance IR VR = 0 V, f = 1 MHz, E = 0 mW/cm2 Not designed for reverse operation 125 - pF 5 10 15 mW/sr - 85 - mW/sr φe - 50 - mW IF = 100 mA TKφe - -0.35 - %/K ϕ - ± 60 - deg Peak wavelength IF = 100 mA λp 840 850 870 nm Spectral bandwidth IF = 30 mA Δλ - 30 - nm Temperature coefficient of λp IF = 30 mA TKλp - 0.25 - nm/K Rise time IF = 100 mA, 20 % to 80 % tr - 10 - ns Fall time IF = 100 mA, 20 % to 80 % tf - 10 - ns d - 0.5 - mm Radiant intensity Radiant power Temperature coefficient of radiant power CJ - IF = 100 mA, tp = 20 ms Ie IF = 1 A, tp = 100 μs Ie IF = 100 mA, tp = 20 ms μA Angle of half intensity Virtual source diameter Rev. 1.4, 13-Oct-15 Document Number: 83317 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMY1850X01 www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 10 Φe, rel - Relative Radiant Power 1 0.1 0.01 IF = 30 mA 0.75 0.5 0.25 0.001 0 0.5 1 1.5 2 2.5 3 VF - Forward Voltage (V) 22097 0 650 3.5 750 Fig. 3 - Forward Current vs. Forward Voltage 0° 10° 20° 30° Ie, rel - Relative Radiant Intensity Ie - Radiant Intensity (mW/sr) 950 Fig. 5 - Relative Radiant Power vs. Wavelength 1000 100 tp = 100 µs 10 1 0.1 0.001 0.01 0.1 REFLOW SOLDER PROFILE max. 260 °C 245 °C 255 °C 240 °C 217 °C 200 max. 30 s 150 max. 100 s 100 max. ramp down 6 °C/s 50 max. ramp up 3 °C/s 19841 50 100 150 200 250 300 Time (s) Fig. 7 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020 Rev. 1.4, 13-Oct-15 0.8 60° 70° 0.7 80° 0.6 0.4 0.2 0 Fig. 6 - Relative Radiant Intensity vs. Angular Displacement Devices are packed in moisture barrier bags (MBB) to prevent the products from moisture absorption during transportation and storage. Each bag contains a desiccant. FLOOR LIFE Time between soldering and removing from MBB must not exceed the time indicated in J-STD-020: Moisture sensitivity: level 3 Floor life: 168 h Conditions: Tamb < 30 °C, RH < 60 % DRYING 0 0 50° DRYPACK 300 max. 120 s 0.9 948013-1 Fig. 4 - Radiant Intensity vs. Forward Current 250 40° 1.0 1 IF - Forward Current (A) 22110 Temperature (°C) 850 λ - Wavelength (nm) 21776-1 ϕ - Angular Displacement IF - Forward Current (A) tp = 100 µs 1 In case of moisture absorption devices should be baked before soldering. Conditions see J-STD-020 or label. Devices taped on reel dry using recommended conditions 192 h at 40 °C (+ 5 °C), RH < 5 %. Document Number: 83317 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMY1850X01 www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters Cathode Bottom view Anode 1 technical drawings specifications according to DIN Not indicated tolerances ± 0.1 Side View 0.35 0.85 2 0.6 0.6 Top View 1.25 Recommended solder pad footprint 1 0.625 1 1.2 0.82 0.6 Drawing-No.: 6.541-5083.01-4 Issue: 2; 10.09.2013 Rev. 1.4, 13-Oct-15 Document Number: 83317 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMY1850X01 www.vishay.com Vishay Semiconductors BLISTER TAPE DIMENSIONS in millimeters 4 Ø 1.55 ± 0.05 0.2 ± 0.05 2 ± 0.05 8 2.24 3.5 ± 0.05 1.75 Anode 0.94 Cathode 1.45 4 Ø 1.1 + 0.1 Not indicated tolerances ±0.1 Reel off direction Drawing-No.: 9.700-5352.01-4 Issue: 1; 13.04.10 technical drawings according to DIN specifications 22112 REEL DIMENSIONS in millimeters 8.4 +2.5 Ø 177.8 max. Ø 55 min. 8.4 +0.15 Z Form of the leave open of the wheel is supplier specific. 14.4 max. Ø 20.2 min. 1.5 min. Ø 13 - 0.2 + 0.5 Z 2:1 Drawing-No.: 9.800-5096.01-4 Issue: 2; 26.04.10 20875 Rev. 1.4, 13-Oct-15 technical drawings according to DIN specifications Document Number: 83317 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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